Electrical characteristics of a bendable a-Si: H thin film transistor with overlapped gate and source/drain regions

Hyungon Oh, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this study, we investigate the influence of an overlap between the gate and source/drain regions of a-Si:H thin film transistors (TFTs) on their electrical characteristics under tensile or compressive strain through experiment and mechanical simulation. The strain distribution in the a-Si:H TFT for a bending radius of 2 mm reveals that the strain at both ends of the TFT is ten times larger than that at the source-drain current path. The overlap lowers the stress sustained by the TFT in the region comprised between the channel and the gate insulator; therefore, TFTs with the overlap operate even at a tensile strain of 2.54%. In particular, the overlap is remarkably effective on relaxing the stress sustained in the interface between the gate insulator and the gate electrode, consequently improving the electrical stability of the bent TFT.

Original languageEnglish
Article number093502
JournalApplied Physics Letters
Volume110
Issue number9
DOIs
Publication statusPublished - 2017 Feb 27

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transistors
thin films
insulators
strain distribution
radii
electrodes
simulation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electrical characteristics of a bendable a-Si : H thin film transistor with overlapped gate and source/drain regions. / Oh, Hyungon; Cho, Kyoungah; Kim, Sangsig.

In: Applied Physics Letters, Vol. 110, No. 9, 093502, 27.02.2017.

Research output: Contribution to journalArticle

@article{997eec78d22e4098912cfdd162a33838,
title = "Electrical characteristics of a bendable a-Si: H thin film transistor with overlapped gate and source/drain regions",
abstract = "In this study, we investigate the influence of an overlap between the gate and source/drain regions of a-Si:H thin film transistors (TFTs) on their electrical characteristics under tensile or compressive strain through experiment and mechanical simulation. The strain distribution in the a-Si:H TFT for a bending radius of 2 mm reveals that the strain at both ends of the TFT is ten times larger than that at the source-drain current path. The overlap lowers the stress sustained by the TFT in the region comprised between the channel and the gate insulator; therefore, TFTs with the overlap operate even at a tensile strain of 2.54{\%}. In particular, the overlap is remarkably effective on relaxing the stress sustained in the interface between the gate insulator and the gate electrode, consequently improving the electrical stability of the bent TFT.",
author = "Hyungon Oh and Kyoungah Cho and Sangsig Kim",
year = "2017",
month = "2",
day = "27",
doi = "10.1063/1.4977564",
language = "English",
volume = "110",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - Electrical characteristics of a bendable a-Si

T2 - H thin film transistor with overlapped gate and source/drain regions

AU - Oh, Hyungon

AU - Cho, Kyoungah

AU - Kim, Sangsig

PY - 2017/2/27

Y1 - 2017/2/27

N2 - In this study, we investigate the influence of an overlap between the gate and source/drain regions of a-Si:H thin film transistors (TFTs) on their electrical characteristics under tensile or compressive strain through experiment and mechanical simulation. The strain distribution in the a-Si:H TFT for a bending radius of 2 mm reveals that the strain at both ends of the TFT is ten times larger than that at the source-drain current path. The overlap lowers the stress sustained by the TFT in the region comprised between the channel and the gate insulator; therefore, TFTs with the overlap operate even at a tensile strain of 2.54%. In particular, the overlap is remarkably effective on relaxing the stress sustained in the interface between the gate insulator and the gate electrode, consequently improving the electrical stability of the bent TFT.

AB - In this study, we investigate the influence of an overlap between the gate and source/drain regions of a-Si:H thin film transistors (TFTs) on their electrical characteristics under tensile or compressive strain through experiment and mechanical simulation. The strain distribution in the a-Si:H TFT for a bending radius of 2 mm reveals that the strain at both ends of the TFT is ten times larger than that at the source-drain current path. The overlap lowers the stress sustained by the TFT in the region comprised between the channel and the gate insulator; therefore, TFTs with the overlap operate even at a tensile strain of 2.54%. In particular, the overlap is remarkably effective on relaxing the stress sustained in the interface between the gate insulator and the gate electrode, consequently improving the electrical stability of the bent TFT.

UR - http://www.scopus.com/inward/record.url?scp=85014526348&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85014526348&partnerID=8YFLogxK

U2 - 10.1063/1.4977564

DO - 10.1063/1.4977564

M3 - Article

AN - SCOPUS:85014526348

VL - 110

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

M1 - 093502

ER -