Electrical characteristics of a new lateral trench electrode IGBT for smart power IC

Ey Goo Kang, Seung Hyun Moon, Man Young Sung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new small sized Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) was proposed to improve characteristics of the conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire Electrode of LTEIGBT was replaced with trench-type electrode. The LTEIGBT was designed so that the width of the device was no more than 19μm. Latch-up current densities of the proposed LTEIGBT increased 10 and 2.3 times more than those of the conventional LIGBT and LTIGBT. Forward blocking voltage of the LTEIGBT was 130V. Conventional LIGBT and LTIGBT of the same size were 60V and 100V, respectively. Because the proposed LTEIGBT was constructed of trench-type electrodes, the electric field moved toward the trench-oxide layer and punch-through breakdown finally occurred.

Original languageEnglish
Title of host publication2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages127-130
Number of pages4
Volume1
ISBN (Electronic)0780365208, 9780780365209
DOIs
Publication statusPublished - 2001
Event6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Shanghai, China
Duration: 2001 Oct 222001 Oct 25

Other

Other6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001
CountryChina
CityShanghai
Period01/10/2201/10/25

Fingerprint

Insulated gate bipolar transistors (IGBT)
Electrodes
Oxides
Current density
Electric fields

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Kang, E. G., Moon, S. H., & Sung, M. Y. (2001). Electrical characteristics of a new lateral trench electrode IGBT for smart power IC. In 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings (Vol. 1, pp. 127-130). [981439] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2001.981439

Electrical characteristics of a new lateral trench electrode IGBT for smart power IC. / Kang, Ey Goo; Moon, Seung Hyun; Sung, Man Young.

2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. Vol. 1 Institute of Electrical and Electronics Engineers Inc., 2001. p. 127-130 981439.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kang, EG, Moon, SH & Sung, MY 2001, Electrical characteristics of a new lateral trench electrode IGBT for smart power IC. in 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. vol. 1, 981439, Institute of Electrical and Electronics Engineers Inc., pp. 127-130, 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001, Shanghai, China, 01/10/22. https://doi.org/10.1109/ICSICT.2001.981439
Kang EG, Moon SH, Sung MY. Electrical characteristics of a new lateral trench electrode IGBT for smart power IC. In 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. Vol. 1. Institute of Electrical and Electronics Engineers Inc. 2001. p. 127-130. 981439 https://doi.org/10.1109/ICSICT.2001.981439
Kang, Ey Goo ; Moon, Seung Hyun ; Sung, Man Young. / Electrical characteristics of a new lateral trench electrode IGBT for smart power IC. 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. Vol. 1 Institute of Electrical and Electronics Engineers Inc., 2001. pp. 127-130
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