We report the electrical characteristics of all polymer based thin film transistor (TFT). Conducting poly (3,4-ethylenediorythiophene) (PEDOT) and polypyrole (PPy) were used for gate electrode and active layer, which were made by photolithographic micro-patterning. Polyvinyle cinnamate and epoxy were used for insulating layer through spin coating. from the current (I)-voltage (V) characteristics of all polymer based TFTs, the source-drain current (I ds) of the devices dramatically decreased with increasing positive gate bias (Vg), indicating p-type TFT. We analyze these relults based on the "bottle-neck" effect, which implies the distinct deplation mode of the field effect region on the gate electrode with positive Vg. With negative Vg, the Ids of the devices weakly increses. Depending on the channel length between the contacts of source and drain electrodes, the on-off current ratio (Ion/Ioff) was changed.
- Poly (3,4-ethylenedioxythioiphene)
- Thin film transistor (TFT)
ASJC Scopus subject areas
- Condensed Matter Physics