Electrical characteristics of Ba0.6Sr0.4TiO 3 thin-film chip capacitors for embedded passive components

Rheza Rahayu, Min Gyu Kang, Young Ho Do, Jin Ha Hwang, Chong Yun Kang, Seok Jin Yoon

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The single-layer 400μm × 200μm sized Ba0.6Sr 0.4TiO3 thin-film embedded chip capacitors with two external electrodes fabricated on the surface of the chip capacitors have been demonstrated. The structure of the external electrodes placed on the same surface allows the reduction of connection length, resulting in low parasitic loss and noise of elecronic devices. The fabricated chip capacitors exhibited excellent electrical properties such as high capacitance density and dielectric constant (1687 nF/cm2 and 452) and a low dielectric loss of 0.052 at 1 kHz, respectively. In addition, the chip capacitors exhibited the superior temperature stability of X5R (ΔC/C = ±15%at-55°Cto +85°C characteristics. Such a low leakage current density of ∼ 0.15μ A/cm} 2 at 3 V and a high breakdown voltage of 19.75 V were obtained as well. In conclusion, the chip capacitors are suggested as a candidate for the applications of embedded passive components.

Original languageEnglish
Article number6361451
Pages (from-to)99-101
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number1
DOIs
Publication statusPublished - 2013

Keywords

  • BST
  • capacitors
  • embedded
  • thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Rahayu, R., Kang, M. G., Do, Y. H., Hwang, J. H., Kang, C. Y., & Yoon, S. J. (2013). Electrical characteristics of Ba0.6Sr0.4TiO 3 thin-film chip capacitors for embedded passive components. IEEE Electron Device Letters, 34(1), 99-101. [6361451]. https://doi.org/10.1109/LED.2012.2224088