Electrical characteristics of bendable a-IGZO thin-film transistors with split channels and top-gate structure

Hyungon Oh, Kyoungah Cho, Sukhyung Park, Sangsig Kim

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

In this study, we fabricate top-gate amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with five split channels on a bendable plastic substrate and investigate the electrical characteristics as a function of bending curvature radius. Owing to the channel width splitting effect, our TFTs have outstanding characteristics including a high mobility of 71.8 cm2/V·s and an on/off ratio of 108. Our bending study reveals that the operation regions of our TFT are categorized into safe, transition, and definitive mechanical failure regions as the value of the bending curvature radius decreases. In the transition region, the threshold voltage is shifted from 1.0 to 2.1 V, and the mobility is decreased from 71.8 to 25.9 cm2/V·s. The electrical failure of bendable TFTs results from microcracks induced by mechanical strain.

Original languageEnglish
Pages (from-to)179-183
Number of pages5
JournalMicroelectronic Engineering
Volume159
DOIs
Publication statusPublished - 2016 Jun 15

Fingerprint

Zinc Oxide
gallium oxides
Gallium
Indium
Thin film transistors
Zinc oxide
zinc oxides
Oxide films
indium
transistors
thin films
curvature
radii
microcracks
Microcracks
Threshold voltage
threshold voltage
plastics
Plastics
Substrates

Keywords

  • a-IGZO
  • Bending curvature radius
  • Plastic substrate
  • Split channel
  • Thin-film transistor

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Electrical characteristics of bendable a-IGZO thin-film transistors with split channels and top-gate structure. / Oh, Hyungon; Cho, Kyoungah; Park, Sukhyung; Kim, Sangsig.

In: Microelectronic Engineering, Vol. 159, 15.06.2016, p. 179-183.

Research output: Contribution to journalArticle

@article{e4bb977195894e689772cc8d2a33e9b1,
title = "Electrical characteristics of bendable a-IGZO thin-film transistors with split channels and top-gate structure",
abstract = "In this study, we fabricate top-gate amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with five split channels on a bendable plastic substrate and investigate the electrical characteristics as a function of bending curvature radius. Owing to the channel width splitting effect, our TFTs have outstanding characteristics including a high mobility of 71.8 cm2/V·s and an on/off ratio of 108. Our bending study reveals that the operation regions of our TFT are categorized into safe, transition, and definitive mechanical failure regions as the value of the bending curvature radius decreases. In the transition region, the threshold voltage is shifted from 1.0 to 2.1 V, and the mobility is decreased from 71.8 to 25.9 cm2/V·s. The electrical failure of bendable TFTs results from microcracks induced by mechanical strain.",
keywords = "a-IGZO, Bending curvature radius, Plastic substrate, Split channel, Thin-film transistor",
author = "Hyungon Oh and Kyoungah Cho and Sukhyung Park and Sangsig Kim",
year = "2016",
month = "6",
day = "15",
doi = "10.1016/j.mee.2016.03.044",
language = "English",
volume = "159",
pages = "179--183",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

TY - JOUR

T1 - Electrical characteristics of bendable a-IGZO thin-film transistors with split channels and top-gate structure

AU - Oh, Hyungon

AU - Cho, Kyoungah

AU - Park, Sukhyung

AU - Kim, Sangsig

PY - 2016/6/15

Y1 - 2016/6/15

N2 - In this study, we fabricate top-gate amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with five split channels on a bendable plastic substrate and investigate the electrical characteristics as a function of bending curvature radius. Owing to the channel width splitting effect, our TFTs have outstanding characteristics including a high mobility of 71.8 cm2/V·s and an on/off ratio of 108. Our bending study reveals that the operation regions of our TFT are categorized into safe, transition, and definitive mechanical failure regions as the value of the bending curvature radius decreases. In the transition region, the threshold voltage is shifted from 1.0 to 2.1 V, and the mobility is decreased from 71.8 to 25.9 cm2/V·s. The electrical failure of bendable TFTs results from microcracks induced by mechanical strain.

AB - In this study, we fabricate top-gate amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with five split channels on a bendable plastic substrate and investigate the electrical characteristics as a function of bending curvature radius. Owing to the channel width splitting effect, our TFTs have outstanding characteristics including a high mobility of 71.8 cm2/V·s and an on/off ratio of 108. Our bending study reveals that the operation regions of our TFT are categorized into safe, transition, and definitive mechanical failure regions as the value of the bending curvature radius decreases. In the transition region, the threshold voltage is shifted from 1.0 to 2.1 V, and the mobility is decreased from 71.8 to 25.9 cm2/V·s. The electrical failure of bendable TFTs results from microcracks induced by mechanical strain.

KW - a-IGZO

KW - Bending curvature radius

KW - Plastic substrate

KW - Split channel

KW - Thin-film transistor

UR - http://www.scopus.com/inward/record.url?scp=84962632408&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84962632408&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2016.03.044

DO - 10.1016/j.mee.2016.03.044

M3 - Article

AN - SCOPUS:84962632408

VL - 159

SP - 179

EP - 183

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -