Electrical characteristics of bendable a-IGZO thin-film transistors with split channels and top-gate structure

Hyungon Oh, Kyoungah Cho, Sukhyung Park, Sangsig Kim

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

In this study, we fabricate top-gate amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with five split channels on a bendable plastic substrate and investigate the electrical characteristics as a function of bending curvature radius. Owing to the channel width splitting effect, our TFTs have outstanding characteristics including a high mobility of 71.8 cm2/V·s and an on/off ratio of 108. Our bending study reveals that the operation regions of our TFT are categorized into safe, transition, and definitive mechanical failure regions as the value of the bending curvature radius decreases. In the transition region, the threshold voltage is shifted from 1.0 to 2.1 V, and the mobility is decreased from 71.8 to 25.9 cm2/V·s. The electrical failure of bendable TFTs results from microcracks induced by mechanical strain.

Original languageEnglish
Pages (from-to)179-183
Number of pages5
JournalMicroelectronic Engineering
Volume159
DOIs
Publication statusPublished - 2016 Jun 15

Keywords

  • a-IGZO
  • Bending curvature radius
  • Plastic substrate
  • Split channel
  • Thin-film transistor

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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