Electrical characteristics of bendable a-ITGZO TFTs on colorless polyimide substrates

Hosang Lee, Kyoungah Cho, Donghyun Kim, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

Abstract

In this study, we fabricate amorphous indium tin gallium zinc oxide (a-ITGZO) thin-film transistors (TFTs) on colorless polyimide (CPI) substrates and examine their electrical characteristics as functions of the bending radius. A representative a-ITGZO TFT shows typical n-type behavior and operates with a mobility of 34.32 cm2 V-1 s-1, threshold voltage of -0.71 V, subthreshold swing of 169 mV, and on/off ratio of 2 × 107. The a-ITGZO TFT operates stably even under a bending radius of 2 mm, regardless of the upward or downward bending. The thickness of the thin CPI substrate contributes to the stable operation of the bent TFT.

Original languageEnglish
Article number065014
JournalSemiconductor Science and Technology
Volume35
Issue number6
DOIs
Publication statusPublished - 2020 Jun

Keywords

  • amorphous indium tin gallium zinc oxide
  • bendable oxide thin-film transistors
  • bending radius
  • colorless polyimide
  • compressive stress
  • tensile stress

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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