Electrical characteristics of contacts to thin film N-polar n-type GaN

Hyunsoo Kim, Jae Hyun Ryou, Russell D. Dupuis, Sung Nam Lee, Yongjo Park, Joon Woo Jeon, Tae Yeon Seong

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Abstract

The electrical characteristics of metallization contacts to a thin film N-polar n-type GaN layer fabricated by a laser lift-off process combined with a dry etching are investigated. It is shown that for Pt Schottky contacts, the Schottky barrier height of the N-polar GaN is 1.27 eV, which is larger than that (1.23 eV) of reference Ga-polar GaN. TiAl Ohmic contacts to the N-polar GaN experience thermal degradation even at 400 °C. Such annealing-induced degradation is explained in terms of the presence of the complex surface states of the N-polar GaN, which consists of impurities and process-induced donorlike and acceptorlike defects.

Original languageEnglish
Article number192106
JournalApplied Physics Letters
Volume93
Issue number19
DOIs
Publication statusPublished - 2008 Nov 21

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, H., Ryou, J. H., Dupuis, R. D., Lee, S. N., Park, Y., Jeon, J. W., & Seong, T. Y. (2008). Electrical characteristics of contacts to thin film N-polar n-type GaN. Applied Physics Letters, 93(19), [192106]. https://doi.org/10.1063/1.3013838