Electrical characteristics of flexible amorphous indium-tin-gallium-zinc oxide thin-film transistors under repetitive mechanical stress

Hosang Lee, Kyoungah Cho, Heesung Kong, Seungjun Lee, Junhyung Lim, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

Abstract

In this study, we investigated the effect of repetitive mechanical stress on the electrical characteristics of amorphous indium-tin-gallium-zinc oxide (a-ITGZO) thin-film transistors (TFTs). The degradation of the electrical characteristics of an a-ITGZO TFT with a curvature radius of 2 mm is minimal even after the TFT undergoes bending 105 times. Our technology computer-aided design simulation reveals that the electrical characteristics degraded by the repeated bending cycles are due to the increase in the acceptor-like Gaussian states (NGA) related with the generation of oxygen interstitial defects.

Original languageEnglish
Article number090903
JournalJapanese journal of applied physics
Volume60
Issue number9
DOIs
Publication statusPublished - 2021 Sep

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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