Electrical characteristics of flexible ZnO thin-film transistors annealed by microwave irradiation

Sukhyung Park, Kyoungah Cho, Kyungwhan Yang, Sangsig Kim

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

This study examines the effect of microwave annealing upon the electrical characteristics of a representative ZnO thin-film transistor (TFT) deposited on a flexible plastic substrate. After microwave irradiation, the mobility of the TFT is increased from 0.2 to 1.5 cm<sup>2</sup>/(V s) and its on/off ratio increases from 36.5 to 6.9 × 10<sup>6</sup>. The photoluminescence study reveals that the concentration of oxygen vacancies increases remarkably when the ZnO thin films are exposed to microwave radiation. In this paper, in addition to the results mentioned above, the correlation between the photoluminescence and electrical characteristics is discussed and the electrical characteristics of the ZnO TFT under strain are analyzed.

Original languageEnglish
Article number062203
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume32
Issue number6
DOIs
Publication statusPublished - 2014 Nov 1

Fingerprint

Microwave irradiation
Thin film transistors
transistors
microwaves
irradiation
Photoluminescence
thin films
Microwaves
Oxygen vacancies
photoluminescence
Annealing
Plastics
Thin films
plastics
Substrates
annealing
oxygen

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Process Chemistry and Technology
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Instrumentation

Cite this

Electrical characteristics of flexible ZnO thin-film transistors annealed by microwave irradiation. / Park, Sukhyung; Cho, Kyoungah; Yang, Kyungwhan; Kim, Sangsig.

In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 32, No. 6, 062203, 01.11.2014.

Research output: Contribution to journalArticle

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