Electrical characteristics of floating-gate memory devices with titanium nanoparticles embedded in gate oxides

Byoungjun Park, Kyoungah Cho, Junggwon Yun, Yong Seo Koo, Jong Ho Lee, Sangsig Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The electrical characteristics of titanium (Ti) nanoparticle-embedded metal-oxide-semiconductor (MOS) capacitors and metal-oxide-semiconductor field effect transistors (MOSFETs) with blocking Al 20 3 layers are studied in this work. Ti nanoparticles were synthesized by a thermal deposition of Ti and by a subsequent thermal annealing procedure. The capacitance versus voltage (C-V) curves obtained for a representative MOS capacitor embedded with Ti nanoparticles exhibit large flat-band voltage shifts, demonstrating the presence of charge storages in the Ti nanoparticles. The counterclockwise hysteresis and flat-band voltage shift observed from the C-V curves imply that electrons are stored in a floating gate layer consisting of the Ti nanoparticles present between the tunneling oxide and control oxide layers in the MOS capacitor and that these stored electrons originate from the p-type Si substrate in inversion condition. Moreover, the source/drain current versus gate voltage curves for the Ti nanoparticle-embedded MOSFETs and the threshold voltage shift characteristics of program/erase time, endurance and retention are analyzed in this paper.

Original languageEnglish
Pages (from-to)1904-1908
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume9
Issue number3
DOIs
Publication statusPublished - 2009 Mar 1

Fingerprint

Titanium
Nanoparticles
Oxides
floating
Semiconductors
titanium
metal oxide semiconductors
Data storage equipment
Equipment and Supplies
nanoparticles
oxides
Metal Nanoparticles
Electric potential
electric potential
capacitors
Capacitors
Metals
MOSFET devices
shift
Capacitance

Keywords

  • Al O
  • High-k
  • Memory
  • Nanoparticles
  • Titanium

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

Cite this

Electrical characteristics of floating-gate memory devices with titanium nanoparticles embedded in gate oxides. / Park, Byoungjun; Cho, Kyoungah; Yun, Junggwon; Koo, Yong Seo; Lee, Jong Ho; Kim, Sangsig.

In: Journal of Nanoscience and Nanotechnology, Vol. 9, No. 3, 01.03.2009, p. 1904-1908.

Research output: Contribution to journalArticle

Park, Byoungjun ; Cho, Kyoungah ; Yun, Junggwon ; Koo, Yong Seo ; Lee, Jong Ho ; Kim, Sangsig. / Electrical characteristics of floating-gate memory devices with titanium nanoparticles embedded in gate oxides. In: Journal of Nanoscience and Nanotechnology. 2009 ; Vol. 9, No. 3. pp. 1904-1908.
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