Electrical characteristics of floating-gate memory devices with titanium nanoparticles embedded in gate oxides

Byoungjun Park, Kyoungah Cho, Junggwon Yun, Yong Seo Koo, Jong Ho Lee, Sangsig Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The electrical characteristics of titanium (Ti) nanoparticle-embedded metal-oxide-semiconductor (MOS) capacitors and metal-oxide-semiconductor field effect transistors (MOSFETs) with blocking Al 20 3 layers are studied in this work. Ti nanoparticles were synthesized by a thermal deposition of Ti and by a subsequent thermal annealing procedure. The capacitance versus voltage (C-V) curves obtained for a representative MOS capacitor embedded with Ti nanoparticles exhibit large flat-band voltage shifts, demonstrating the presence of charge storages in the Ti nanoparticles. The counterclockwise hysteresis and flat-band voltage shift observed from the C-V curves imply that electrons are stored in a floating gate layer consisting of the Ti nanoparticles present between the tunneling oxide and control oxide layers in the MOS capacitor and that these stored electrons originate from the p-type Si substrate in inversion condition. Moreover, the source/drain current versus gate voltage curves for the Ti nanoparticle-embedded MOSFETs and the threshold voltage shift characteristics of program/erase time, endurance and retention are analyzed in this paper.

Original languageEnglish
Pages (from-to)1904-1908
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume9
Issue number3
DOIs
Publication statusPublished - 2009 Mar 1

Keywords

  • Al O
  • High-k
  • Memory
  • Nanoparticles
  • Titanium

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

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