GaAs nanowire (NW)-based metalsemiconductor field-effect transistors (MESFETs) were constructed on flexible plastic substrates by a conventional topdown approach. The topdown approach utilized in this paper combines photolithography of high-quality GaAs bulk wafers with anisotropic chemical etching processes for preparation of GaAs NWs and photolithographic processes for formation of metal electrodes. For a representative GaAs NW-based MESFET, peak transconductance, the Ion/Ioff ratio, and the subthreshold slope are estimated to be approximately 19.7 μS, ∼10 7, and ∼100 mV/dec, respectively. The electrical characteristics of the GaAs NW-based MESFETs were maintained during 3000 times of bending cycles under maximal tensile strains of 0.77% and 1.02%. These results demonstrate the possibility of using these devices in high-speed and high-performance flexible electronics.
- Flexible electronics
- metalsemiconductor field-effect transistors (MESFET)
- nanowire (NW)
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials