Electrical characteristics of GaAs nanowire-based MESFETs on flexible plastics

Changjoon Yoon, Gyoujin Cho, Sangsig Kim

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

GaAs nanowire (NW)-based metalsemiconductor field-effect transistors (MESFETs) were constructed on flexible plastic substrates by a conventional topdown approach. The topdown approach utilized in this paper combines photolithography of high-quality GaAs bulk wafers with anisotropic chemical etching processes for preparation of GaAs NWs and photolithographic processes for formation of metal electrodes. For a representative GaAs NW-based MESFET, peak transconductance, the Ion/Ioff ratio, and the subthreshold slope are estimated to be approximately 19.7 μS, ∼10 7, and ∼100 mV/dec, respectively. The electrical characteristics of the GaAs NW-based MESFETs were maintained during 3000 times of bending cycles under maximal tensile strains of 0.77% and 1.02%. These results demonstrate the possibility of using these devices in high-speed and high-performance flexible electronics.

Original languageEnglish
Article number5732676
Pages (from-to)1096-1101
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume58
Issue number4
DOIs
Publication statusPublished - 2011 Apr 1

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Keywords

  • Flexible electronics
  • GaAs
  • metalsemiconductor field-effect transistors (MESFET)
  • nanowire (NW)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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