Abstract
In this paper, we investigate the performance of inverters and ring oscillators composed of gate-all-around (GAA) silicon nanowire and nanosheet (NSH) field-effect transistors (FETs), compared with FinFETs, for sub-10nm logic technology applications. Our TCAD transient simulations reveal that ring oscillators with 3 stacked channels with NSH width, three times wider than the fin width, exhibit improvements of up to 22% in the oscillation frequencies. compared to a ring oscillator with FinFETs. Thus, our study provides an insight for device down-selection in the development of GAA FET technology.
| Original language | English |
|---|---|
| Title of host publication | 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 1-2 |
| Number of pages | 2 |
| ISBN (Electronic) | 9781538648254 |
| DOIs | |
| Publication status | Published - 2018 Jul 3 |
| Event | 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 - Hsinchu, Taiwan, Province of China Duration: 2018 Apr 16 → 2018 Apr 19 |
Other
| Other | 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 |
|---|---|
| Country | Taiwan, Province of China |
| City | Hsinchu |
| Period | 18/4/16 → 18/4/19 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Instrumentation
- Electronic, Optical and Magnetic Materials
Cite this
Electrical characteristics of gate-all-around MOSFET ring oscillators using TCAD simulation. / Kim, Sutae; Kim, Minsuk; Woo, Sola; Kang, Hyungu; Kim, Sangsig.
2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-2.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Electrical characteristics of gate-all-around MOSFET ring oscillators using TCAD simulation
AU - Kim, Sutae
AU - Kim, Minsuk
AU - Woo, Sola
AU - Kang, Hyungu
AU - Kim, Sangsig
PY - 2018/7/3
Y1 - 2018/7/3
N2 - In this paper, we investigate the performance of inverters and ring oscillators composed of gate-all-around (GAA) silicon nanowire and nanosheet (NSH) field-effect transistors (FETs), compared with FinFETs, for sub-10nm logic technology applications. Our TCAD transient simulations reveal that ring oscillators with 3 stacked channels with NSH width, three times wider than the fin width, exhibit improvements of up to 22% in the oscillation frequencies. compared to a ring oscillator with FinFETs. Thus, our study provides an insight for device down-selection in the development of GAA FET technology.
AB - In this paper, we investigate the performance of inverters and ring oscillators composed of gate-all-around (GAA) silicon nanowire and nanosheet (NSH) field-effect transistors (FETs), compared with FinFETs, for sub-10nm logic technology applications. Our TCAD transient simulations reveal that ring oscillators with 3 stacked channels with NSH width, three times wider than the fin width, exhibit improvements of up to 22% in the oscillation frequencies. compared to a ring oscillator with FinFETs. Thus, our study provides an insight for device down-selection in the development of GAA FET technology.
UR - http://www.scopus.com/inward/record.url?scp=85050474411&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85050474411&partnerID=8YFLogxK
U2 - 10.1109/VLSI-TSA.2018.8403835
DO - 10.1109/VLSI-TSA.2018.8403835
M3 - Conference contribution
AN - SCOPUS:85050474411
SP - 1
EP - 2
BT - 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
PB - Institute of Electrical and Electronics Engineers Inc.
ER -