Electrical characteristics of gate-all-around MOSFET ring oscillators using TCAD simulation

Sutae Kim, Minsuk Kim, Sola Woo, Hyungu Kang, Sangsig Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we investigate the performance of inverters and ring oscillators composed of gate-all-around (GAA) silicon nanowire and nanosheet (NSH) field-effect transistors (FETs), compared with FinFETs, for sub-10nm logic technology applications. Our TCAD transient simulations reveal that ring oscillators with 3 stacked channels with NSH width, three times wider than the fin width, exhibit improvements of up to 22% in the oscillation frequencies. compared to a ring oscillator with FinFETs. Thus, our study provides an insight for device down-selection in the development of GAA FET technology.

Original languageEnglish
Title of host publication2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-2
Number of pages2
ISBN (Electronic)9781538648254
DOIs
Publication statusPublished - 2018 Jul 3
Event2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 - Hsinchu, Taiwan, Province of China
Duration: 2018 Apr 162018 Apr 19

Other

Other2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
CountryTaiwan, Province of China
CityHsinchu
Period18/4/1618/4/19

Fingerprint

Nanosheets
Field effect transistors
field effect transistors
oscillators
rings
Silicon
Nanowires
inverters
simulation
fins
logic
nanowires
oscillations
silicon
FinFET
thiazole-4-carboxamide adenine dinucleotide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Instrumentation
  • Electronic, Optical and Magnetic Materials

Cite this

Kim, S., Kim, M., Woo, S., Kang, H., & Kim, S. (2018). Electrical characteristics of gate-all-around MOSFET ring oscillators using TCAD simulation. In 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 (pp. 1-2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2018.8403835

Electrical characteristics of gate-all-around MOSFET ring oscillators using TCAD simulation. / Kim, Sutae; Kim, Minsuk; Woo, Sola; Kang, Hyungu; Kim, Sangsig.

2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-2.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kim, S, Kim, M, Woo, S, Kang, H & Kim, S 2018, Electrical characteristics of gate-all-around MOSFET ring oscillators using TCAD simulation. in 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc., pp. 1-2, 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018, Hsinchu, Taiwan, Province of China, 18/4/16. https://doi.org/10.1109/VLSI-TSA.2018.8403835
Kim S, Kim M, Woo S, Kang H, Kim S. Electrical characteristics of gate-all-around MOSFET ring oscillators using TCAD simulation. In 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-2 https://doi.org/10.1109/VLSI-TSA.2018.8403835
Kim, Sutae ; Kim, Minsuk ; Woo, Sola ; Kang, Hyungu ; Kim, Sangsig. / Electrical characteristics of gate-all-around MOSFET ring oscillators using TCAD simulation. 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-2
@inproceedings{f07a0af47b66439baa63a3cec25ca9bb,
title = "Electrical characteristics of gate-all-around MOSFET ring oscillators using TCAD simulation",
abstract = "In this paper, we investigate the performance of inverters and ring oscillators composed of gate-all-around (GAA) silicon nanowire and nanosheet (NSH) field-effect transistors (FETs), compared with FinFETs, for sub-10nm logic technology applications. Our TCAD transient simulations reveal that ring oscillators with 3 stacked channels with NSH width, three times wider than the fin width, exhibit improvements of up to 22{\%} in the oscillation frequencies. compared to a ring oscillator with FinFETs. Thus, our study provides an insight for device down-selection in the development of GAA FET technology.",
author = "Sutae Kim and Minsuk Kim and Sola Woo and Hyungu Kang and Sangsig Kim",
year = "2018",
month = "7",
day = "3",
doi = "10.1109/VLSI-TSA.2018.8403835",
language = "English",
pages = "1--2",
booktitle = "2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Electrical characteristics of gate-all-around MOSFET ring oscillators using TCAD simulation

AU - Kim, Sutae

AU - Kim, Minsuk

AU - Woo, Sola

AU - Kang, Hyungu

AU - Kim, Sangsig

PY - 2018/7/3

Y1 - 2018/7/3

N2 - In this paper, we investigate the performance of inverters and ring oscillators composed of gate-all-around (GAA) silicon nanowire and nanosheet (NSH) field-effect transistors (FETs), compared with FinFETs, for sub-10nm logic technology applications. Our TCAD transient simulations reveal that ring oscillators with 3 stacked channels with NSH width, three times wider than the fin width, exhibit improvements of up to 22% in the oscillation frequencies. compared to a ring oscillator with FinFETs. Thus, our study provides an insight for device down-selection in the development of GAA FET technology.

AB - In this paper, we investigate the performance of inverters and ring oscillators composed of gate-all-around (GAA) silicon nanowire and nanosheet (NSH) field-effect transistors (FETs), compared with FinFETs, for sub-10nm logic technology applications. Our TCAD transient simulations reveal that ring oscillators with 3 stacked channels with NSH width, three times wider than the fin width, exhibit improvements of up to 22% in the oscillation frequencies. compared to a ring oscillator with FinFETs. Thus, our study provides an insight for device down-selection in the development of GAA FET technology.

UR - http://www.scopus.com/inward/record.url?scp=85050474411&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85050474411&partnerID=8YFLogxK

U2 - 10.1109/VLSI-TSA.2018.8403835

DO - 10.1109/VLSI-TSA.2018.8403835

M3 - Conference contribution

SP - 1

EP - 2

BT - 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

PB - Institute of Electrical and Electronics Engineers Inc.

ER -