Electrical characteristics of gate-all-around MOSFET ring oscillators using TCAD simulation

Sutae Kim, Minsuk Kim, Sola Woo, Hyungu Kang, Sangsig Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this paper, we investigate the performance of inverters and ring oscillators composed of gate-all-around (GAA) silicon nanowire and nanosheet (NSH) field-effect transistors (FETs), compared with FinFETs, for sub-10nm logic technology applications. Our TCAD transient simulations reveal that ring oscillators with 3 stacked channels with NSH width, three times wider than the fin width, exhibit improvements of up to 22% in the oscillation frequencies. compared to a ring oscillator with FinFETs. Thus, our study provides an insight for device down-selection in the development of GAA FET technology.

Original languageEnglish
Title of host publication2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-2
Number of pages2
ISBN (Electronic)9781538648254
DOIs
Publication statusPublished - 2018 Jul 3
Event2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 - Hsinchu, Taiwan, Province of China
Duration: 2018 Apr 162018 Apr 19

Other

Other2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
CountryTaiwan, Province of China
CityHsinchu
Period18/4/1618/4/19

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Instrumentation
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Kim, S., Kim, M., Woo, S., Kang, H., & Kim, S. (2018). Electrical characteristics of gate-all-around MOSFET ring oscillators using TCAD simulation. In 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 (pp. 1-2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2018.8403835