Electrical characteristics of gate-all-around MOSFET ring oscillators using TCAD simulation

Sutae Kim; Minsuk Kim; Sola Woo; Hyungu Kang; Sangsig Kim

doi:10.1109/VLSI-TSA.2018.8403835

Electrical characteristics of gate-all-around MOSFET ring oscillators using TCAD simulation

Sutae Kim, Minsuk Kim, Sola Woo, Hyungu Kang, Sangsig Kim

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

In this paper, we investigate the performance of inverters and ring oscillators composed of gate-all-around (GAA) silicon nanowire and nanosheet (NSH) field-effect transistors (FETs), compared with FinFETs, for sub-10nm logic technology applications. Our TCAD transient simulations reveal that ring oscillators with 3 stacked channels with NSH width, three times wider than the fin width, exhibit improvements of up to 22% in the oscillation frequencies. compared to a ring oscillator with FinFETs. Thus, our study provides an insight for device down-selection in the development of GAA FET technology.

Original language	English
Title of host publication	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-2
Number of pages	2
ISBN (Electronic)	9781538648254
DOIs	https://doi.org/10.1109/VLSI-TSA.2018.8403835
Publication status	Published - 2018 Jul 3
Event	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 - Hsinchu, Taiwan, Province of China Duration: 2018 Apr 16 → 2018 Apr 19

Other

Other	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
Country	Taiwan, Province of China
City	Hsinchu
Period	18/4/16 → 18/4/19

ASJC Scopus subject areas

Electrical and Electronic Engineering
Instrumentation
Electronic, Optical and Magnetic Materials

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Electrical characteristics of gate-all-around MOSFET ring oscillators using TCAD simulation. / Kim, Sutae; Kim, Minsuk; Woo, Sola; Kang, Hyungu; Kim, Sangsig.

2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-2.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, S, Kim, M, Woo, S, Kang, H & Kim, S 2018, Electrical characteristics of gate-all-around MOSFET ring oscillators using TCAD simulation. in 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc., pp. 1-2, 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018, Hsinchu, Taiwan, Province of China, 18/4/16. https://doi.org/10.1109/VLSI-TSA.2018.8403835

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