Abstract
In this paper, we investigate the performance of inverters and ring oscillators composed of gate-all-around (GAA) silicon nanowire and nanosheet (NSH) field-effect transistors (FETs), compared with FinFETs, for sub-10nm logic technology applications. Our TCAD transient simulations reveal that ring oscillators with 3 stacked channels with NSH width, three times wider than the fin width, exhibit improvements of up to 22% in the oscillation frequencies. compared to a ring oscillator with FinFETs. Thus, our study provides an insight for device down-selection in the development of GAA FET technology.
Original language | English |
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Title of host publication | 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 1-2 |
Number of pages | 2 |
ISBN (Electronic) | 9781538648254 |
DOIs | |
Publication status | Published - 2018 Jul 3 |
Event | 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 - Hsinchu, Taiwan, Province of China Duration: 2018 Apr 16 → 2018 Apr 19 |
Other
Other | 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 |
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Country | Taiwan, Province of China |
City | Hsinchu |
Period | 18/4/16 → 18/4/19 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Instrumentation
- Electronic, Optical and Magnetic Materials