Electrical characteristics of Ge-nano-crystal embedded MOS capacitors for non-volatile-memory application

Samjong Choi, Young Soo Park, KyooChul Cho, TaeSoo Kang, Tae Sung Kim, Byoungjun Park, Kyoungah Cho, Sangsig Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Germanium nanocrystals (NCs)-embedded silicon dioxide (SiO 2) layers on top of Si substrates were prepared using the implantation of 74Ge + ions into the SiO 2 layers and the annealing of the implanted oxide layers. The distribution of Ge NCs embedded inside the SiO 2 layers was examined by high resolution transmission electron microscopy, and optical properties of the embedded NCs were characterized by photoluminescence and micro-Raman spectroscopy. Capacitance versus voltage (C-V) measurements of Ge NCs-embedded MOS capacitors with single Al 2O 3 capping layers were performed in order to study memory characteristics of these MOS capacitors. The C-V curves exhibit large threshold voltage shifts originating from charging effect of the Ge NCs, revealing the possibility that the MOS structure is applicable to Nano Floating Gate Memory (NFGM) devices. copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationECS Transactions
Pages449-455
Number of pages7
Volume3
Edition2
DOIs
Publication statusPublished - 2006
EventAdvanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: 2006 Oct 292006 Nov 3

Other

OtherAdvanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting
CountryMexico
CityCancun
Period06/10/2906/11/3

Fingerprint

MOS capacitors
Nanocrystals
Data storage equipment
Crystals
Capacitance measurement
Voltage measurement
High resolution transmission electron microscopy
Threshold voltage
Germanium
Ion implantation
Raman spectroscopy
Photoluminescence
Capacitance
Optical properties
Silica
Annealing
Oxides
Ions
Electric potential
Substrates

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Choi, S., Park, Y. S., Cho, K., Kang, T., Kim, T. S., Park, B., ... Kim, S. (2006). Electrical characteristics of Ge-nano-crystal embedded MOS capacitors for non-volatile-memory application. In ECS Transactions (2 ed., Vol. 3, pp. 449-455) https://doi.org/10.1149/1.2356304

Electrical characteristics of Ge-nano-crystal embedded MOS capacitors for non-volatile-memory application. / Choi, Samjong; Park, Young Soo; Cho, KyooChul; Kang, TaeSoo; Kim, Tae Sung; Park, Byoungjun; Cho, Kyoungah; Kim, Sangsig.

ECS Transactions. Vol. 3 2. ed. 2006. p. 449-455.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Choi, S, Park, YS, Cho, K, Kang, T, Kim, TS, Park, B, Cho, K & Kim, S 2006, Electrical characteristics of Ge-nano-crystal embedded MOS capacitors for non-volatile-memory application. in ECS Transactions. 2 edn, vol. 3, pp. 449-455, Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting, Cancun, Mexico, 06/10/29. https://doi.org/10.1149/1.2356304
Choi S, Park YS, Cho K, Kang T, Kim TS, Park B et al. Electrical characteristics of Ge-nano-crystal embedded MOS capacitors for non-volatile-memory application. In ECS Transactions. 2 ed. Vol. 3. 2006. p. 449-455 https://doi.org/10.1149/1.2356304
Choi, Samjong ; Park, Young Soo ; Cho, KyooChul ; Kang, TaeSoo ; Kim, Tae Sung ; Park, Byoungjun ; Cho, Kyoungah ; Kim, Sangsig. / Electrical characteristics of Ge-nano-crystal embedded MOS capacitors for non-volatile-memory application. ECS Transactions. Vol. 3 2. ed. 2006. pp. 449-455
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