Abstract
Memory characteristics of gold nanoparticle-embedded metal-insulator-semiconductor (MIS) capacitors with polymer (parylene-C) gate insulating material are investigated in this study. The gold nanoparticles used in this work were synthesized by the colloidal method. Current density versus voltage curves obtained from the MIS capacitors exhibit better performance for the parylene-C gate insulator, compared with other gate insulating materials. Capacitance versus voltage (C-V) curves show a flat band voltage shift, which indicates the possibility of charge storage in the gold nanoparticles. In addition, the charge retention characteristic for the gold nanoparticle-embedded MIS capacitor is described in this paper.
| Original language | English |
|---|---|
| Pages (from-to) | 878-882 |
| Number of pages | 5 |
| Journal | Organic Electronics: physics, materials, applications |
| Volume | 9 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2008 Oct 1 |
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Keywords
- Gold
- MIS capacitors
- Nanoparticles
- Polymer insulators
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Surfaces and Interfaces
Cite this
Electrical characteristics of gold nanoparticle-embedded MIS capacitors with parylene gate dielectric. / Park, Byoungjun; Im, Ki Ju; Cho, Kyoungah; Kim, Sangsig.
In: Organic Electronics: physics, materials, applications, Vol. 9, No. 5, 01.10.2008, p. 878-882.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electrical characteristics of gold nanoparticle-embedded MIS capacitors with parylene gate dielectric
AU - Park, Byoungjun
AU - Im, Ki Ju
AU - Cho, Kyoungah
AU - Kim, Sangsig
PY - 2008/10/1
Y1 - 2008/10/1
N2 - Memory characteristics of gold nanoparticle-embedded metal-insulator-semiconductor (MIS) capacitors with polymer (parylene-C) gate insulating material are investigated in this study. The gold nanoparticles used in this work were synthesized by the colloidal method. Current density versus voltage curves obtained from the MIS capacitors exhibit better performance for the parylene-C gate insulator, compared with other gate insulating materials. Capacitance versus voltage (C-V) curves show a flat band voltage shift, which indicates the possibility of charge storage in the gold nanoparticles. In addition, the charge retention characteristic for the gold nanoparticle-embedded MIS capacitor is described in this paper.
AB - Memory characteristics of gold nanoparticle-embedded metal-insulator-semiconductor (MIS) capacitors with polymer (parylene-C) gate insulating material are investigated in this study. The gold nanoparticles used in this work were synthesized by the colloidal method. Current density versus voltage curves obtained from the MIS capacitors exhibit better performance for the parylene-C gate insulator, compared with other gate insulating materials. Capacitance versus voltage (C-V) curves show a flat band voltage shift, which indicates the possibility of charge storage in the gold nanoparticles. In addition, the charge retention characteristic for the gold nanoparticle-embedded MIS capacitor is described in this paper.
KW - Gold
KW - MIS capacitors
KW - Nanoparticles
KW - Polymer insulators
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UR - http://www.scopus.com/inward/citedby.url?scp=49049107700&partnerID=8YFLogxK
U2 - 10.1016/j.orgel.2008.06.010
DO - 10.1016/j.orgel.2008.06.010
M3 - Article
VL - 9
SP - 878
EP - 882
JO - Organic Electronics: physics, materials, applications
JF - Organic Electronics: physics, materials, applications
SN - 1566-1199
IS - 5
ER -