Electrical characteristics of gold nanoparticle-embedded MIS capacitors with parylene gate dielectric

Byoungjun Park, Ki Ju Im, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Memory characteristics of gold nanoparticle-embedded metal-insulator-semiconductor (MIS) capacitors with polymer (parylene-C) gate insulating material are investigated in this study. The gold nanoparticles used in this work were synthesized by the colloidal method. Current density versus voltage curves obtained from the MIS capacitors exhibit better performance for the parylene-C gate insulator, compared with other gate insulating materials. Capacitance versus voltage (C-V) curves show a flat band voltage shift, which indicates the possibility of charge storage in the gold nanoparticles. In addition, the charge retention characteristic for the gold nanoparticle-embedded MIS capacitor is described in this paper.

Original languageEnglish
Pages (from-to)878-882
Number of pages5
JournalOrganic Electronics: physics, materials, applications
Volume9
Issue number5
DOIs
Publication statusPublished - 2008 Oct 1

Fingerprint

Gate dielectrics
MIS (semiconductors)
Gold
capacitors
Capacitors
Metals
Semiconductor materials
gold
Nanoparticles
nanoparticles
Insulating materials
insulation
Electric potential
electric potential
curves
Polymers
Capacitance
Current density
capacitance
insulators

Keywords

  • Gold
  • MIS capacitors
  • Nanoparticles
  • Polymer insulators

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Electrical characteristics of gold nanoparticle-embedded MIS capacitors with parylene gate dielectric. / Park, Byoungjun; Im, Ki Ju; Cho, Kyoungah; Kim, Sangsig.

In: Organic Electronics: physics, materials, applications, Vol. 9, No. 5, 01.10.2008, p. 878-882.

Research output: Contribution to journalArticle

@article{5997ee92be80412b93981ad03c4bf49d,
title = "Electrical characteristics of gold nanoparticle-embedded MIS capacitors with parylene gate dielectric",
abstract = "Memory characteristics of gold nanoparticle-embedded metal-insulator-semiconductor (MIS) capacitors with polymer (parylene-C) gate insulating material are investigated in this study. The gold nanoparticles used in this work were synthesized by the colloidal method. Current density versus voltage curves obtained from the MIS capacitors exhibit better performance for the parylene-C gate insulator, compared with other gate insulating materials. Capacitance versus voltage (C-V) curves show a flat band voltage shift, which indicates the possibility of charge storage in the gold nanoparticles. In addition, the charge retention characteristic for the gold nanoparticle-embedded MIS capacitor is described in this paper.",
keywords = "Gold, MIS capacitors, Nanoparticles, Polymer insulators",
author = "Byoungjun Park and Im, {Ki Ju} and Kyoungah Cho and Sangsig Kim",
year = "2008",
month = "10",
day = "1",
doi = "10.1016/j.orgel.2008.06.010",
language = "English",
volume = "9",
pages = "878--882",
journal = "Organic Electronics: physics, materials, applications",
issn = "1566-1199",
publisher = "Elsevier",
number = "5",

}

TY - JOUR

T1 - Electrical characteristics of gold nanoparticle-embedded MIS capacitors with parylene gate dielectric

AU - Park, Byoungjun

AU - Im, Ki Ju

AU - Cho, Kyoungah

AU - Kim, Sangsig

PY - 2008/10/1

Y1 - 2008/10/1

N2 - Memory characteristics of gold nanoparticle-embedded metal-insulator-semiconductor (MIS) capacitors with polymer (parylene-C) gate insulating material are investigated in this study. The gold nanoparticles used in this work were synthesized by the colloidal method. Current density versus voltage curves obtained from the MIS capacitors exhibit better performance for the parylene-C gate insulator, compared with other gate insulating materials. Capacitance versus voltage (C-V) curves show a flat band voltage shift, which indicates the possibility of charge storage in the gold nanoparticles. In addition, the charge retention characteristic for the gold nanoparticle-embedded MIS capacitor is described in this paper.

AB - Memory characteristics of gold nanoparticle-embedded metal-insulator-semiconductor (MIS) capacitors with polymer (parylene-C) gate insulating material are investigated in this study. The gold nanoparticles used in this work were synthesized by the colloidal method. Current density versus voltage curves obtained from the MIS capacitors exhibit better performance for the parylene-C gate insulator, compared with other gate insulating materials. Capacitance versus voltage (C-V) curves show a flat band voltage shift, which indicates the possibility of charge storage in the gold nanoparticles. In addition, the charge retention characteristic for the gold nanoparticle-embedded MIS capacitor is described in this paper.

KW - Gold

KW - MIS capacitors

KW - Nanoparticles

KW - Polymer insulators

UR - http://www.scopus.com/inward/record.url?scp=49049107700&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=49049107700&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2008.06.010

DO - 10.1016/j.orgel.2008.06.010

M3 - Article

VL - 9

SP - 878

EP - 882

JO - Organic Electronics: physics, materials, applications

JF - Organic Electronics: physics, materials, applications

SN - 1566-1199

IS - 5

ER -