Abstract
Memory characteristics of gold nanoparticle-embedded metal-insulator-semiconductor (MIS) capacitors with polymer (parylene-C) gate insulating material are investigated in this study. The gold nanoparticles used in this work were synthesized by the colloidal method. Current density versus voltage curves obtained from the MIS capacitors exhibit better performance for the parylene-C gate insulator, compared with other gate insulating materials. Capacitance versus voltage (C-V) curves show a flat band voltage shift, which indicates the possibility of charge storage in the gold nanoparticles. In addition, the charge retention characteristic for the gold nanoparticle-embedded MIS capacitor is described in this paper.
| Original language | English |
|---|---|
| Pages (from-to) | 878-882 |
| Number of pages | 5 |
| Journal | Organic Electronics: physics, materials, applications |
| Volume | 9 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2008 Oct 1 |
Keywords
- Gold
- MIS capacitors
- Nanoparticles
- Polymer insulators
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Surfaces and Interfaces
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Park, B., Im, K. J., Cho, K., & Kim, S. (2008). Electrical characteristics of gold nanoparticle-embedded MIS capacitors with parylene gate dielectric. Organic Electronics: physics, materials, applications, 9(5), 878-882. https://doi.org/10.1016/j.orgel.2008.06.010