Electrical characteristics of HgTe nanocrystal-based thin film transistors fabricated on flexible plastic substrates

Dong Won Kim, Jaewon Jang, Hyunsuk Kim, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

HgTe nanocrystal-based thin film transistors were fabricated on flexible polyethersulfone substrates and their electrical properties were characterized. Hydrophilic Al2O3 buffer layers were first deposited on the flexible substrates and HgTe nanocrystal films were then formed on top of the buffer layers. A representative top-gate flexible thin film transistor with a channel composed of a HgTe nanocrystal film functioned as a p-channel transistor and exhibited a mobility of ~ 1.20 cm2/V{bullet operator}s and an on/off current ratio of ~ 1 × 103.

Original languageEnglish
Pages (from-to)7715-7719
Number of pages5
JournalThin Solid Films
Volume516
Issue number21
DOIs
Publication statusPublished - 2008 Sep 1

Fingerprint

Thin film transistors
Nanocrystals
nanocrystals
transistors
plastics
Buffer layers
Plastics
Substrates
thin films
buffers
Transistors
Electric properties
electrical properties
operators

Keywords

  • Aluminum oxide
  • Hydrophilicity
  • Mercury telluride
  • Nanocrystals
  • Polymer substrate
  • Thin film transistor

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Electrical characteristics of HgTe nanocrystal-based thin film transistors fabricated on flexible plastic substrates. / Kim, Dong Won; Jang, Jaewon; Kim, Hyunsuk; Cho, Kyoungah; Kim, Sangsig.

In: Thin Solid Films, Vol. 516, No. 21, 01.09.2008, p. 7715-7719.

Research output: Contribution to journalArticle

Kim, Dong Won ; Jang, Jaewon ; Kim, Hyunsuk ; Cho, Kyoungah ; Kim, Sangsig. / Electrical characteristics of HgTe nanocrystal-based thin film transistors fabricated on flexible plastic substrates. In: Thin Solid Films. 2008 ; Vol. 516, No. 21. pp. 7715-7719.
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