Electrical characteristics of HgTe nanocrystal-based thin film transistors fabricated on flexible plastic substrates

Dong Won Kim, Jaewon Jang, Hyunsuk Kim, Kyoungah Cho, Sangsig Kim

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18 Citations (Scopus)


HgTe nanocrystal-based thin film transistors were fabricated on flexible polyethersulfone substrates and their electrical properties were characterized. Hydrophilic Al2O3 buffer layers were first deposited on the flexible substrates and HgTe nanocrystal films were then formed on top of the buffer layers. A representative top-gate flexible thin film transistor with a channel composed of a HgTe nanocrystal film functioned as a p-channel transistor and exhibited a mobility of ~ 1.20 cm2/V{bullet operator}s and an on/off current ratio of ~ 1 × 103.

Original languageEnglish
Pages (from-to)7715-7719
Number of pages5
JournalThin Solid Films
Issue number21
Publication statusPublished - 2008 Sep 1



  • Aluminum oxide
  • Hydrophilicity
  • Mercury telluride
  • Nanocrystals
  • Polymer substrate
  • Thin film transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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