Gold nanoparticles synthesized by a colloidal method were deposited in an Al2 O3dielectric layer of an omega-gated single ZnO nanowire FET. These gold nanoparticles were utilized as localized trap sites. The adsorption of the gold nanoparticles on an Al2 O 3-coated ZnO nanowire was confirmed by high-resolution transmission electron microscopy. In this study, a hybrid nanoparticlenanowire device was fabricated by conventional Si processing. Its electrical characteristics indicated that electrons in the conduction band of the ZnO nanowire can be transported to the localized trap sites by gold nanoparticles for gate voltages greater than 1 V, through the 10-nm-thick Al 2 O3 tunneling oxide layer.
- FET logic devices
- FET memory integrated circuits
ASJC Scopus subject areas
- Computer Science Applications
- Electrical and Electronic Engineering