Electrical characteristics of hybrid nanoparticle nanowire devices

Dong Young Jeong, Kihyun Keem, Byoungjun Park, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Gold nanoparticles synthesized by a colloidal method were deposited in an Al2 O3dielectric layer of an omega-gated single ZnO nanowire FET. These gold nanoparticles were utilized as localized trap sites. The adsorption of the gold nanoparticles on an Al2 O 3-coated ZnO nanowire was confirmed by high-resolution transmission electron microscopy. In this study, a hybrid nanoparticlenanowire device was fabricated by conventional Si processing. Its electrical characteristics indicated that electrons in the conduction band of the ZnO nanowire can be transported to the localized trap sites by gold nanoparticles for gate voltages greater than 1 V, through the 10-nm-thick Al 2 O3 tunneling oxide layer.

Original languageEnglish
Article number4907083
Pages (from-to)650-653
Number of pages4
JournalIEEE Transactions on Nanotechnology
Volume8
Issue number5
DOIs
Publication statusPublished - 2009 Sep 1

Fingerprint

Nanowires
Gold
Nanoparticles
Field effect transistors
High resolution transmission electron microscopy
Conduction bands
Adsorption
Oxides
Electrons
Electric potential
Processing

Keywords

  • FET logic devices
  • FET memory integrated circuits
  • Memories
  • Nanotechnology

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications

Cite this

Electrical characteristics of hybrid nanoparticle nanowire devices. / Jeong, Dong Young; Keem, Kihyun; Park, Byoungjun; Cho, Kyoungah; Kim, Sangsig.

In: IEEE Transactions on Nanotechnology, Vol. 8, No. 5, 4907083, 01.09.2009, p. 650-653.

Research output: Contribution to journalArticle

Jeong, Dong Young ; Keem, Kihyun ; Park, Byoungjun ; Cho, Kyoungah ; Kim, Sangsig. / Electrical characteristics of hybrid nanoparticle nanowire devices. In: IEEE Transactions on Nanotechnology. 2009 ; Vol. 8, No. 5. pp. 650-653.
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