Electrical characteristics of In/ITO p-type ohmic contacts for high-performance GaN-based light-emitting diodes

Joon Ho Oh, Kyoung Kook Kim, Hyun Gi Hong, Kyeong Jae Byeon, Heon Lee, Sang Won Yoon, Jae Pyoung Ahn, Tae Yeon Seong

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We have investigated the annealing-induced improved electrical properties of In(10 nm)/ITO(200 nm) contacts with p-type GaN. The contacts become ohmic with a specific contact resistance of 2.75×103 Ω cm 2 upon annealing at 650 °C in air. X-ray photoemission spectroscopy (XPS) Ga 2p core levels obtained from the interface regions before and after annealing indicate a large band-bending of p-GaN, resulting in an increase in the Schottky barrier height. STEM/energy dispersive X-ray (EDX) profiling results exhibit the formation of interfacial In-Ga-Sn-oxide. Based on the STEM and XPS results, the ohmic formation mechanisms are described and discussed. It is also shown that patterning by nano-imprint lithography improves the light output power of blue LEDs by 1828% as compared to that of LEDs fabricated with unpatterned In/ITO contacts.

Original languageEnglish
Pages (from-to)272-275
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume13
Issue number4
DOIs
Publication statusPublished - 2010 Dec 1

Fingerprint

Ohmic contacts
ITO (semiconductors)
Light emitting diodes
electric contacts
light emitting diodes
Annealing
Photoelectron spectroscopy
X ray spectroscopy
annealing
photoelectric emission
x rays
Core levels
Contact resistance
contact resistance
Oxides
Lithography
spectroscopy
Electric properties
lithography
electrical properties

Keywords

  • ITO
  • Light-emitting diode
  • Ohmic contact
  • Transparent electrode

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Electrical characteristics of In/ITO p-type ohmic contacts for high-performance GaN-based light-emitting diodes. / Oh, Joon Ho; Kim, Kyoung Kook; Hong, Hyun Gi; Byeon, Kyeong Jae; Lee, Heon; Yoon, Sang Won; Ahn, Jae Pyoung; Seong, Tae Yeon.

In: Materials Science in Semiconductor Processing, Vol. 13, No. 4, 01.12.2010, p. 272-275.

Research output: Contribution to journalArticle

Oh, Joon Ho ; Kim, Kyoung Kook ; Hong, Hyun Gi ; Byeon, Kyeong Jae ; Lee, Heon ; Yoon, Sang Won ; Ahn, Jae Pyoung ; Seong, Tae Yeon. / Electrical characteristics of In/ITO p-type ohmic contacts for high-performance GaN-based light-emitting diodes. In: Materials Science in Semiconductor Processing. 2010 ; Vol. 13, No. 4. pp. 272-275.
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AU - Byeon, Kyeong Jae

AU - Lee, Heon

AU - Yoon, Sang Won

AU - Ahn, Jae Pyoung

AU - Seong, Tae Yeon

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N2 - We have investigated the annealing-induced improved electrical properties of In(10 nm)/ITO(200 nm) contacts with p-type GaN. The contacts become ohmic with a specific contact resistance of 2.75×103 Ω cm 2 upon annealing at 650 °C in air. X-ray photoemission spectroscopy (XPS) Ga 2p core levels obtained from the interface regions before and after annealing indicate a large band-bending of p-GaN, resulting in an increase in the Schottky barrier height. STEM/energy dispersive X-ray (EDX) profiling results exhibit the formation of interfacial In-Ga-Sn-oxide. Based on the STEM and XPS results, the ohmic formation mechanisms are described and discussed. It is also shown that patterning by nano-imprint lithography improves the light output power of blue LEDs by 1828% as compared to that of LEDs fabricated with unpatterned In/ITO contacts.

AB - We have investigated the annealing-induced improved electrical properties of In(10 nm)/ITO(200 nm) contacts with p-type GaN. The contacts become ohmic with a specific contact resistance of 2.75×103 Ω cm 2 upon annealing at 650 °C in air. X-ray photoemission spectroscopy (XPS) Ga 2p core levels obtained from the interface regions before and after annealing indicate a large band-bending of p-GaN, resulting in an increase in the Schottky barrier height. STEM/energy dispersive X-ray (EDX) profiling results exhibit the formation of interfacial In-Ga-Sn-oxide. Based on the STEM and XPS results, the ohmic formation mechanisms are described and discussed. It is also shown that patterning by nano-imprint lithography improves the light output power of blue LEDs by 1828% as compared to that of LEDs fabricated with unpatterned In/ITO contacts.

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