Electrical characteristics of metal-Al2O3-Si structure deposited by ICBE technique for application of semiconductor device fabrication

Man Y. Sung, Y. C. Kim, B. M. Moon, K. V. Rao, Dong H. Rhie

Research output: Contribution to journalConference article

Abstract

Deposition of Al2O3 films by Ionized Cluster Beam Epitaxy (ICBE) at low substrate temperature is described. Details of the film deposition system and fundamental characteristics of the Al-Al2O3-Si structure and the dielectric breakdown of Al2O3 were studied. Aluminum oxide offers unique advantages over the conventional silicon dioxide gate insulator: greater resistance to ionic motion, better radiation hardness, higher possibility of obtaining low threshold voltage in MOSFETs and use as gate insulator in nonvolatile memory devices.

Original languageEnglish
Pages (from-to)786-792
Number of pages7
JournalProceedings - Electronic Components and Technology Conference
Publication statusPublished - 1995
EventProceedings of the 1995 45th Electronic Components & Technology Conference - Las Vegas, NV, USA
Duration: 1995 May 211995 May 24

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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