Electrical characteristics of metal-Al2O3-Si structure deposited by ICBE technique for application of semiconductor device fabrication

Man Y. Sung, Y. C. Kim, B. M. Moon, K. V. Rao, Dong H. Rhie

Research output: Contribution to journalConference articlepeer-review

Abstract

Deposition of Al2O3 films by Ionized Cluster Beam Epitaxy (ICBE) at low substrate temperature is described. Details of the film deposition system and fundamental characteristics of the Al-Al2O3-Si structure and the dielectric breakdown of Al2O3 were studied. Aluminum oxide offers unique advantages over the conventional silicon dioxide gate insulator: greater resistance to ionic motion, better radiation hardness, higher possibility of obtaining low threshold voltage in MOSFETs and use as gate insulator in nonvolatile memory devices.

Original languageEnglish
Pages (from-to)786-792
Number of pages7
JournalProceedings - Electronic Components and Technology Conference
Publication statusPublished - 1995
EventProceedings of the 1995 45th Electronic Components & Technology Conference - Las Vegas, NV, USA
Duration: 1995 May 211995 May 24

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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