Electrical characteristics of metal contacts to laser-irradiated N-polar n-type GaN

Hyunsoo Kim, Jae Hyun Ryou, Russell D. Dupuis, Taesung Jang, Yongjo Park, Sung Nam Lee, Tae Yeon Seong

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Electrical characteristics of metal contacts to a laser-irradiated thin-film N-polar n-type GaN surface are investigated. It is shown that the laser irradiation of the N-polar n-GaN results in a significant increase (as high as 3.0 × 10 cm3) in the electron concentration and a decrease in the Schottky barrier height by 0.05 eV (0.28 eV), as estimated using Pt-based Schottky diodes (X-ray photoemission spectroscopy). Ti/Al contacts to the laser-irradiated N-polar sample exhibit an excellent Ohmic behavior with thermal stability up to 600 °C, indicating that the laser irradiation treatment can be a very promising technology in practical applications.

Original languageEnglish
Pages (from-to)319-321
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number4
DOIs
Publication statusPublished - 2009 Feb 10

    Fingerprint

Keywords

  • Contact
  • GaN
  • N-polar
  • Schottky barrier heights (SBHs)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this