Electrical characteristics of MoSe2 TFTs dependent on the Al2O3 capping layer

Hyunjea Lee, Ji Heon Kim, Cheol Jin Lee

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Back-gated MoSe2 thin-film transistors (TFTs) with an Al2O3-capping layer were fabricated, and the device characteristics of the MoSe2 TFTs that are dependent on the Al2O3-capping-layer passivation were investigated. The output drain current was doubled, the fluctuation of the output current was suppressed, and the threshold voltage of the MoSe2 TFTs was negatively shifted with the Al2O3-capping layer. The on/off-current ratio of the MoSe2 TFTs is approximately six decades regardless of the Al2O3-capping layer, but the field-effect mobility was greatly increased from 2.86 cm2/Vs to 10.26 cm2/Vs after the deposition of the Al2O3-capping layer. According to the results of this study, the Al2O3-capping layer can enhance the device characteristics of MoSe2 TFTs.

Original languageEnglish
Article number222105
JournalApplied Physics Letters
Volume109
Issue number22
DOIs
Publication statusPublished - 2016 Nov 28

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transistors
thin films
output
threshold voltage
passivity

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electrical characteristics of MoSe2 TFTs dependent on the Al2O3 capping layer. / Lee, Hyunjea; Kim, Ji Heon; Lee, Cheol Jin.

In: Applied Physics Letters, Vol. 109, No. 22, 222105, 28.11.2016.

Research output: Contribution to journalArticle

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