Electrical characteristics of nano-crystal Si particles for nano floating gate memory

Jin Seok Yang, Seong Il Kim, Yong Tae Kim, Woon Jo Cho, Jung Ho Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Nonvolatile memory device was fabricated by using Nano-Crystal(NC)-Si particles. NC-Si particles had a wide size distribution of 1-5nm and an average size of 2.7nm, which were sufficiently small to indicate the quantum effect for silicon. The memory window was analyzed by C-V characteristic of NC-Si particles. Vd-Id, Vg-Id characteristics of the fabricated device were also measured.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages628-629
Number of pages2
DOIs
Publication statusPublished - 2006
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 2006 Oct 222006 Oct 25

Publication series

Name2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume1

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period06/10/2206/10/25

Keywords

  • Nano Crystal (NC)-Si
  • Non-volatile memory device

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

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  • Cite this

    Yang, J. S., Kim, S. I., Kim, Y. T., Cho, W. J., & Park, J. H. (2006). Electrical characteristics of nano-crystal Si particles for nano floating gate memory. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (pp. 628-629). [4388936] (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1). https://doi.org/10.1109/NMDC.2006.4388936