Electrical characteristics of nano-crystal Si particles for nano floating gate memory

Jin Seok Yang, Seong Il Kim, Yong Tae Kim, Woon Jo Cho, Jung ho Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Nonvolatile memory device was fabricated by using Nano-Crystal(NC)-Si particles. NC-Si particles had a wide size distribution of 1-5nm and an average size of 2.7nm, which were sufficiently small to indicate the quantum effect for silicon. The memory window was analyzed by C-V characteristic of NC-Si particles. Vd-Id, Vg-Id characteristics of the fabricated device were also measured.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages628-629
Number of pages2
Volume1
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 2006 Oct 222006 Oct 25

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period06/10/2206/10/25

Fingerprint

Data storage equipment
Crystals
Silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

Cite this

Yang, J. S., Kim, S. I., Kim, Y. T., Cho, W. J., & Park, J. H. (2006). Electrical characteristics of nano-crystal Si particles for nano floating gate memory. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (Vol. 1, pp. 628-629). [4388936] https://doi.org/10.1109/NMDC.2006.4388936

Electrical characteristics of nano-crystal Si particles for nano floating gate memory. / Yang, Jin Seok; Kim, Seong Il; Kim, Yong Tae; Cho, Woon Jo; Park, Jung ho.

2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1 2006. p. 628-629 4388936.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yang, JS, Kim, SI, Kim, YT, Cho, WJ & Park, JH 2006, Electrical characteristics of nano-crystal Si particles for nano floating gate memory. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. vol. 1, 4388936, pp. 628-629, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06/10/22. https://doi.org/10.1109/NMDC.2006.4388936
Yang JS, Kim SI, Kim YT, Cho WJ, Park JH. Electrical characteristics of nano-crystal Si particles for nano floating gate memory. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1. 2006. p. 628-629. 4388936 https://doi.org/10.1109/NMDC.2006.4388936
Yang, Jin Seok ; Kim, Seong Il ; Kim, Yong Tae ; Cho, Woon Jo ; Park, Jung ho. / Electrical characteristics of nano-crystal Si particles for nano floating gate memory. 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1 2006. pp. 628-629
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