Electrical characteristics of nano-crystal Si particles for nano-floating gate memory

Jin Seok Yang, Seong Il Kim, Yong Tae Kim, Woon Jo Cho, Jung Ho Park

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In these days, the researches of non-volatile memory device using nano-crystal(NC)-Si are actively progressing to replace flash memory devices. Many kinds of non-volatile memory devices such as phase-change(P)-RAM, resistance(Re)-RAM, polymer(Po)-RAM, and nano-floating gate memory(NFGM) are being studied. In this work, we study NFGM device in which information is memorized by storing electrons in silicon nanocrystal. The NFGM device has shown great promise for ultra-dense high-endurance memory device for low-power applications [S. Tiwari, et al., Appl. Phys. Lett. 68 (1996) 1377], and it is able to fabricate 1T-type device. Thus, the NFGM is considered to replace existing flash memory device. Non-volatile memory device has been fabricated by using NC-Si particles. The NC-Si particles have broad size range of 1-5 nm and an average size of 2.7 nm, which are sufficiently small to indicate the quantum effect for silicon. The memory window has been analyzed by C-V characteristic of NC-Si particles. Vd-Id and Vg-Id characteristics of the fabricated device have also been measured.

Original languageEnglish
Pages (from-to)1553-1555
Number of pages3
JournalMicroelectronics Journal
Volume39
Issue number12
DOIs
Publication statusPublished - 2008 Dec

Keywords

  • C-V characteristics
  • I-V characteristics.
  • NFGM
  • Nano-crystal(NC)-Si particles
  • Non-volatile memory device

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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