Electrical characteristics of nickel silicide-silicon heterojunction in suspended silicon nanowires

Su Heon Hong, Myung Gil Kang, Byung Sung Kim, Duk Soo Kim, Jae Hyun Ahn, Dongmok Whang, Sanghoon Sull, Sung Woo Hwang

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Electronic characteristics of silicide/silicon interface were studied in the suspended, chemically synthesized silicon nanowires (SiNWs). Step-by-step intrusion of a silicide/Si interface along the axial direction of a suspended silicon nanowire was performed by repeated thermal annealing cycles, and the current-voltage (I-V) characteristics of the annealed silicide/SiNW/silicide structure were measured at each cycle. The intruded length of the silicide was found to be directly proportional to the total annealing time, but the rate of silicidation was much smaller than previous works on similar silicide/SiNWs. A structural kink with Ni atoms diffused along the sidewall created a secondary source of silicidation, resulting in anomalous I-V characteristics. The measured I-V including this unintentional silicidation in the Si channel was explained by various combinations of Schottky barriers and resistors.

Original languageEnglish
Pages (from-to)130-134
Number of pages5
JournalSolid-State Electronics
Volume56
Issue number1
DOIs
Publication statusPublished - 2011 Feb

Keywords

  • Electron transport
  • Silicide-silicon heterojunction
  • Silicon nanowire

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Hong, S. H., Kang, M. G., Kim, B. S., Kim, D. S., Ahn, J. H., Whang, D., Sull, S., & Hwang, S. W. (2011). Electrical characteristics of nickel silicide-silicon heterojunction in suspended silicon nanowires. Solid-State Electronics, 56(1), 130-134. https://doi.org/10.1016/j.sse.2010.11.012