Electrical characteristics of p-GaN Schottky rectifiers after PECVD SiNx passivation

K. H. Baik; B. Luo; J. Kim; S. J. Pearton; F. Ren

doi:10.1016/S0038-1101(02)00081-3

Electrical characteristics of p-GaN Schottky rectifiers after PECVD SiN_x passivation

K. H. Baik, B. Luo, J. Kim, S. J. Pearton, F. Ren

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The use of PECVD SiN_x layers on p-GaN is complicated by the fact that atomic hydrogen exposure decreases the hole concentration in the GaN through formation of neutral Mg-H complexes and can also lead to preferential loss of nitrogen from the near-surface region which further decreases the p-GaN conductivity. We have exposed p-GaN rectifiers to SiH₄/NH₃ rf-plasmas during PECVD of thin SiN(x) passivation layers and measured the effect on both reverse breakdown voltage and diode ideality factor.

Original language	English
Pages (from-to)	1459-1462
Number of pages	4
Journal	Solid-State Electronics
Volume	46
Issue number	9
DOIs	https://doi.org/10.1016/S0038-1101(02)00081-3
Publication status	Published - 2002 Sept
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/S0038-1101(02)00081-3

Cite this

@article{dfcb09617b5044beb8040741bb8d1b76,

title = "Electrical characteristics of p-GaN Schottky rectifiers after PECVD SiNx passivation",

abstract = "The use of PECVD SiNx layers on p-GaN is complicated by the fact that atomic hydrogen exposure decreases the hole concentration in the GaN through formation of neutral Mg-H complexes and can also lead to preferential loss of nitrogen from the near-surface region which further decreases the p-GaN conductivity. We have exposed p-GaN rectifiers to SiH4/NH3 rf-plasmas during PECVD of thin SiN(x) passivation layers and measured the effect on both reverse breakdown voltage and diode ideality factor.",

author = "Baik, {K. H.} and B. Luo and J. Kim and Pearton, {S. J.} and F. Ren",

note = "Funding Information: The work at UF is partially supported by NSF grants DMR0101438 and CTS-117399.",

year = "2002",

month = sep,

doi = "10.1016/S0038-1101(02)00081-3",

language = "English",

volume = "46",

pages = "1459--1462",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "9",

}

TY - JOUR

T1 - Electrical characteristics of p-GaN Schottky rectifiers after PECVD SiNx passivation

AU - Baik, K. H.

AU - Luo, B.

AU - Kim, J.

AU - Pearton, S. J.

AU - Ren, F.

N1 - Funding Information: The work at UF is partially supported by NSF grants DMR0101438 and CTS-117399.

PY - 2002/9

Y1 - 2002/9

N2 - The use of PECVD SiNx layers on p-GaN is complicated by the fact that atomic hydrogen exposure decreases the hole concentration in the GaN through formation of neutral Mg-H complexes and can also lead to preferential loss of nitrogen from the near-surface region which further decreases the p-GaN conductivity. We have exposed p-GaN rectifiers to SiH4/NH3 rf-plasmas during PECVD of thin SiN(x) passivation layers and measured the effect on both reverse breakdown voltage and diode ideality factor.

AB - The use of PECVD SiNx layers on p-GaN is complicated by the fact that atomic hydrogen exposure decreases the hole concentration in the GaN through formation of neutral Mg-H complexes and can also lead to preferential loss of nitrogen from the near-surface region which further decreases the p-GaN conductivity. We have exposed p-GaN rectifiers to SiH4/NH3 rf-plasmas during PECVD of thin SiN(x) passivation layers and measured the effect on both reverse breakdown voltage and diode ideality factor.

UR - http://www.scopus.com/inward/record.url?scp=0036721685&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036721685&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(02)00081-3

DO - 10.1016/S0038-1101(02)00081-3

M3 - Article

AN - SCOPUS:0036721685

SN - 0038-1101

VL - 46

SP - 1459

EP - 1462

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 9

ER -

Electrical characteristics of p-GaN Schottky rectifiers after PECVD SiN_x passivation

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this