The use of PECVD SiNx layers on p-GaN is complicated by the fact that atomic hydrogen exposure decreases the hole concentration in the GaN through formation of neutral Mg-H complexes and can also lead to preferential loss of nitrogen from the near-surface region which further decreases the p-GaN conductivity. We have exposed p-GaN rectifiers to SiH4/NH3 rf-plasmas during PECVD of thin SiN(x) passivation layers and measured the effect on both reverse breakdown voltage and diode ideality factor.
|Number of pages||4|
|Publication status||Published - 2002 Sept|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry