Electrical characteristics of p-GaN Schottky rectifiers after PECVD SiNx passivation

K. H. Baik, B. Luo, J. Kim, S. J. Pearton, F. Ren

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The use of PECVD SiNx layers on p-GaN is complicated by the fact that atomic hydrogen exposure decreases the hole concentration in the GaN through formation of neutral Mg-H complexes and can also lead to preferential loss of nitrogen from the near-surface region which further decreases the p-GaN conductivity. We have exposed p-GaN rectifiers to SiH4/NH3 rf-plasmas during PECVD of thin SiN(x) passivation layers and measured the effect on both reverse breakdown voltage and diode ideality factor.

Original languageEnglish
Pages (from-to)1459-1462
Number of pages4
JournalSolid-State Electronics
Volume46
Issue number9
DOIs
Publication statusPublished - 2002 Sep
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Electrical characteristics of p-GaN Schottky rectifiers after PECVD SiN<sub>x</sub> passivation'. Together they form a unique fingerprint.

  • Cite this