Electrical characteristics of p-GaN Schottky rectifiers after PECVD SiNx passivation

K. H. Baik, B. Luo, Ji Hyun Kim, S. J. Pearton, F. Ren

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The use of PECVD SiNx layers on p-GaN is complicated by the fact that atomic hydrogen exposure decreases the hole concentration in the GaN through formation of neutral Mg-H complexes and can also lead to preferential loss of nitrogen from the near-surface region which further decreases the p-GaN conductivity. We have exposed p-GaN rectifiers to SiH4/NH3 rf-plasmas during PECVD of thin SiN(x) passivation layers and measured the effect on both reverse breakdown voltage and diode ideality factor.

Original languageEnglish
Pages (from-to)1459-1462
Number of pages4
JournalSolid-State Electronics
Volume46
Issue number9
DOIs
Publication statusPublished - 2002 Sep 1
Externally publishedYes

Fingerprint

rectifiers
Plasma enhanced chemical vapor deposition
Passivation
passivity
Hole concentration
Electric breakdown
electrical faults
Hydrogen
Diodes
Nitrogen
diodes
Plasmas
nitrogen
conductivity
hydrogen

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Electrical characteristics of p-GaN Schottky rectifiers after PECVD SiNx passivation. / Baik, K. H.; Luo, B.; Kim, Ji Hyun; Pearton, S. J.; Ren, F.

In: Solid-State Electronics, Vol. 46, No. 9, 01.09.2002, p. 1459-1462.

Research output: Contribution to journalArticle

Baik, K. H. ; Luo, B. ; Kim, Ji Hyun ; Pearton, S. J. ; Ren, F. / Electrical characteristics of p-GaN Schottky rectifiers after PECVD SiNx passivation. In: Solid-State Electronics. 2002 ; Vol. 46, No. 9. pp. 1459-1462.
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