Electrical characteristics of polycrystalline Si layers embedded into high-k Al 2 O 3 gate layers

Byoungjun Park, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)


The electrical characteristics of polycrystalline Si (poly Si) layers embedded into high-k Al 2 O 3 (alumina) gate layers are investigated in this work. The capacitance versus voltage (C-V) curves obtained from the metal-alumina-polysilicon-alumina-silicon (MASAS) capacitors exhibit significant threshold voltage shifts, and the width of their hysteresis window is dependent on the range of the voltage sweep. The counterclockwise hysteresis observed in the C-V curves indicates that electrons originating from the p-type Si substrate in the inversion condition are trapped in the floating gate layer consisting of the poly Si layer present between the top and bottom Al 2 O 3 layers in the MASAS capacitor. Also, current versus voltage (I-V) measurements are performed to examine the electrical characteristics of the fabricated capacitors. The I-V measurements reveal that our MASAS capacitors show a very low leakage current density, compared to the previously reported results.

Original languageEnglish
Pages (from-to)7905-7908
Number of pages4
JournalApplied Surface Science
Issue number23
Publication statusPublished - 2008 Sep 30



  • Alumina
  • High-k
  • Memory
  • Polycrystalline silicon

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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