Electrical characteristics of polycrystalline Si layers embedded into high-k Al2O3 gate layers

Byoungjun Park, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The electrical characteristics of polycrystalline Si (poly Si) layers embedded into high-k Al2O3 (alumina) gate layers are investigated in this work. The capacitance versus voltage (C-V) curves obtained from the metal-alumina-polysilicon-alumina-silicon (MASAS) capacitors exhibit significant threshold voltage shifts, and the width of their hysteresis window is dependent on the range of the voltage sweep. The counterclockwise hysteresis observed in the C-V curves indicates that electrons originating from the p-type Si substrate in the inversion condition are trapped in the floating gate layer consisting of the poly Si layer present between the top and bottom Al2O3 layers in the MASAS capacitor. Also, current versus voltage (I-V) measurements are performed to examine the electrical characteristics of the fabricated capacitors. The I-V measurements reveal that our MASAS capacitors show a very low leakage current density, compared to the previously reported results.

Original languageEnglish
Pages (from-to)7905-7908
Number of pages4
JournalApplied Surface Science
Volume254
Issue number23
DOIs
Publication statusPublished - 2008 Sep 30

Fingerprint

Aluminum Oxide
Alumina
aluminum oxides
capacitors
Silicon
Capacitors
Polysilicon
Metals
Electric potential
electric potential
Hysteresis
silicon
Capacitance
capacitance
hysteresis
metals
curves
Threshold voltage
Leakage currents
threshold voltage

Keywords

  • Alumina
  • High-k
  • Memory
  • Polycrystalline silicon

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Electrical characteristics of polycrystalline Si layers embedded into high-k Al2O3 gate layers. / Park, Byoungjun; Cho, Kyoungah; Kim, Sangsig.

In: Applied Surface Science, Vol. 254, No. 23, 30.09.2008, p. 7905-7908.

Research output: Contribution to journalArticle

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AB - The electrical characteristics of polycrystalline Si (poly Si) layers embedded into high-k Al2O3 (alumina) gate layers are investigated in this work. The capacitance versus voltage (C-V) curves obtained from the metal-alumina-polysilicon-alumina-silicon (MASAS) capacitors exhibit significant threshold voltage shifts, and the width of their hysteresis window is dependent on the range of the voltage sweep. The counterclockwise hysteresis observed in the C-V curves indicates that electrons originating from the p-type Si substrate in the inversion condition are trapped in the floating gate layer consisting of the poly Si layer present between the top and bottom Al2O3 layers in the MASAS capacitor. Also, current versus voltage (I-V) measurements are performed to examine the electrical characteristics of the fabricated capacitors. The I-V measurements reveal that our MASAS capacitors show a very low leakage current density, compared to the previously reported results.

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