Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors

B. Luo, Ji Hyun Kim, F. Ren, J. K. Gillespie, R. C. Fitch, J. Sewell, R. Dettmer, G. D. Via, A. Crespo, T. J. Jenkins, B. P. Gila, A. H. Onstine, K. K. Allums, C. R. Abernathy, S. J. Pearton, R. Dwivedi, T. N. Fogarty, R. Wilkins

Research output: Contribution to journalArticle

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Abstract

A study was performed on electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors (HEMT). It was found that devices with an AlGaN cap layer showed less degradation in dc characteristics than comparable GaN-cap devices. The results showed that the changes in device performance could be attributed completely to bulk trapping effects.

Original languageEnglish
Pages (from-to)1428-1430
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number9
DOIs
Publication statusPublished - 2003 Mar 3
Externally publishedYes

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high electron mobility transistors
caps
protons
trapping
degradation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors. / Luo, B.; Kim, Ji Hyun; Ren, F.; Gillespie, J. K.; Fitch, R. C.; Sewell, J.; Dettmer, R.; Via, G. D.; Crespo, A.; Jenkins, T. J.; Gila, B. P.; Onstine, A. H.; Allums, K. K.; Abernathy, C. R.; Pearton, S. J.; Dwivedi, R.; Fogarty, T. N.; Wilkins, R.

In: Applied Physics Letters, Vol. 82, No. 9, 03.03.2003, p. 1428-1430.

Research output: Contribution to journalArticle

Luo, B, Kim, JH, Ren, F, Gillespie, JK, Fitch, RC, Sewell, J, Dettmer, R, Via, GD, Crespo, A, Jenkins, TJ, Gila, BP, Onstine, AH, Allums, KK, Abernathy, CR, Pearton, SJ, Dwivedi, R, Fogarty, TN & Wilkins, R 2003, 'Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors', Applied Physics Letters, vol. 82, no. 9, pp. 1428-1430. https://doi.org/10.1063/1.1559631
Luo, B. ; Kim, Ji Hyun ; Ren, F. ; Gillespie, J. K. ; Fitch, R. C. ; Sewell, J. ; Dettmer, R. ; Via, G. D. ; Crespo, A. ; Jenkins, T. J. ; Gila, B. P. ; Onstine, A. H. ; Allums, K. K. ; Abernathy, C. R. ; Pearton, S. J. ; Dwivedi, R. ; Fogarty, T. N. ; Wilkins, R. / Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors. In: Applied Physics Letters. 2003 ; Vol. 82, No. 9. pp. 1428-1430.
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