Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors

B. Luo, Jihyun Kim, F. Ren, J. K. Gillespie, R. C. Fitch, J. Sewell, R. Dettmer, G. D. Via, A. Crespo, T. J. Jenkins, B. P. Gila, A. H. Onstine, K. K. Allums, C. R. Abernathy, S. J. Pearton, R. Dwivedi, T. N. Fogarty, R. Wilkins

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Abstract

A study was performed on electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors (HEMT). It was found that devices with an AlGaN cap layer showed less degradation in dc characteristics than comparable GaN-cap devices. The results showed that the changes in device performance could be attributed completely to bulk trapping effects.

Original languageEnglish
Pages (from-to)1428-1430
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number9
DOIs
Publication statusPublished - 2003 Mar 3
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Luo, B., Kim, J., Ren, F., Gillespie, J. K., Fitch, R. C., Sewell, J., Dettmer, R., Via, G. D., Crespo, A., Jenkins, T. J., Gila, B. P., Onstine, A. H., Allums, K. K., Abernathy, C. R., Pearton, S. J., Dwivedi, R., Fogarty, T. N., & Wilkins, R. (2003). Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors. Applied Physics Letters, 82(9), 1428-1430. https://doi.org/10.1063/1.1559631