A study was performed on electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors (HEMT). It was found that devices with an AlGaN cap layer showed less degradation in dc characteristics than comparable GaN-cap devices. The results showed that the changes in device performance could be attributed completely to bulk trapping effects.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)