Electrical characteristics of Pt Schottky contacts on sulfide-treated n -type ZnO

Sang Ho Kim, Han Ki Kim, Tae Yeon Seong

Research output: Contribution to journalArticle

70 Citations (Scopus)

Abstract

We have investigated the effect of sulfide treatment on the electrical characteristics of Pt contacts on (000-1) n -type ZnO (~5× 1015 cm-3) single crystals. The Pt contact on conventionally cleaned ZnO surface shows an ohmic behavior. However, the contact produces a Schottky behavior, when the ZnO surface is etched in a boiling (NH4) 2 Sx solution. Measurements show that the Schottky barrier height, ideality factor, and leakage current at -5 V of the Pt contact on the sulfide-treated ZnO are 0.79 eV, 1.51, and 3.75× 10-10 A, respectively. Auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy (XPS) examinations indicate the formation of ZnS phase at the PtZnO interface. Based on the capacitance-voltage, AES, and XPS results, a possible mechanism for the formation of good Schottky contacts is given.

Original languageEnglish
Article number022101
JournalApplied Physics Letters
Volume86
Issue number2
DOIs
Publication statusPublished - 2005 Jan 10
Externally publishedYes

Fingerprint

x ray spectroscopy
Auger spectroscopy
electron spectroscopy
sulfides
electric contacts
photoelectron spectroscopy
boiling
leakage
examination
capacitance
single crystals
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electrical characteristics of Pt Schottky contacts on sulfide-treated n -type ZnO. / Kim, Sang Ho; Kim, Han Ki; Seong, Tae Yeon.

In: Applied Physics Letters, Vol. 86, No. 2, 022101, 10.01.2005.

Research output: Contribution to journalArticle

@article{12e1c49a0b2342bda9ab8255482c4120,
title = "Electrical characteristics of Pt Schottky contacts on sulfide-treated n -type ZnO",
abstract = "We have investigated the effect of sulfide treatment on the electrical characteristics of Pt contacts on (000-1) n -type ZnO (~5× 1015 cm-3) single crystals. The Pt contact on conventionally cleaned ZnO surface shows an ohmic behavior. However, the contact produces a Schottky behavior, when the ZnO surface is etched in a boiling (NH4) 2 Sx solution. Measurements show that the Schottky barrier height, ideality factor, and leakage current at -5 V of the Pt contact on the sulfide-treated ZnO are 0.79 eV, 1.51, and 3.75× 10-10 A, respectively. Auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy (XPS) examinations indicate the formation of ZnS phase at the PtZnO interface. Based on the capacitance-voltage, AES, and XPS results, a possible mechanism for the formation of good Schottky contacts is given.",
author = "Kim, {Sang Ho} and Kim, {Han Ki} and Seong, {Tae Yeon}",
year = "2005",
month = "1",
day = "10",
doi = "10.1063/1.1839285",
language = "English",
volume = "86",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Electrical characteristics of Pt Schottky contacts on sulfide-treated n -type ZnO

AU - Kim, Sang Ho

AU - Kim, Han Ki

AU - Seong, Tae Yeon

PY - 2005/1/10

Y1 - 2005/1/10

N2 - We have investigated the effect of sulfide treatment on the electrical characteristics of Pt contacts on (000-1) n -type ZnO (~5× 1015 cm-3) single crystals. The Pt contact on conventionally cleaned ZnO surface shows an ohmic behavior. However, the contact produces a Schottky behavior, when the ZnO surface is etched in a boiling (NH4) 2 Sx solution. Measurements show that the Schottky barrier height, ideality factor, and leakage current at -5 V of the Pt contact on the sulfide-treated ZnO are 0.79 eV, 1.51, and 3.75× 10-10 A, respectively. Auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy (XPS) examinations indicate the formation of ZnS phase at the PtZnO interface. Based on the capacitance-voltage, AES, and XPS results, a possible mechanism for the formation of good Schottky contacts is given.

AB - We have investigated the effect of sulfide treatment on the electrical characteristics of Pt contacts on (000-1) n -type ZnO (~5× 1015 cm-3) single crystals. The Pt contact on conventionally cleaned ZnO surface shows an ohmic behavior. However, the contact produces a Schottky behavior, when the ZnO surface is etched in a boiling (NH4) 2 Sx solution. Measurements show that the Schottky barrier height, ideality factor, and leakage current at -5 V of the Pt contact on the sulfide-treated ZnO are 0.79 eV, 1.51, and 3.75× 10-10 A, respectively. Auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy (XPS) examinations indicate the formation of ZnS phase at the PtZnO interface. Based on the capacitance-voltage, AES, and XPS results, a possible mechanism for the formation of good Schottky contacts is given.

UR - http://www.scopus.com/inward/record.url?scp=19744383277&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=19744383277&partnerID=8YFLogxK

U2 - 10.1063/1.1839285

DO - 10.1063/1.1839285

M3 - Article

VL - 86

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

M1 - 022101

ER -