Electrical characteristics of Pt Schottky contacts on sulfide-treated n -type ZnO

Sang Ho Kim, Han Ki Kim, Tae Yeon Seong

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70 Citations (Scopus)

Abstract

We have investigated the effect of sulfide treatment on the electrical characteristics of Pt contacts on (000-1) n -type ZnO (~5× 1015 cm-3) single crystals. The Pt contact on conventionally cleaned ZnO surface shows an ohmic behavior. However, the contact produces a Schottky behavior, when the ZnO surface is etched in a boiling (NH4) 2 Sx solution. Measurements show that the Schottky barrier height, ideality factor, and leakage current at -5 V of the Pt contact on the sulfide-treated ZnO are 0.79 eV, 1.51, and 3.75× 10-10 A, respectively. Auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy (XPS) examinations indicate the formation of ZnS phase at the PtZnO interface. Based on the capacitance-voltage, AES, and XPS results, a possible mechanism for the formation of good Schottky contacts is given.

Original languageEnglish
Article number022101
JournalApplied Physics Letters
Volume86
Issue number2
DOIs
Publication statusPublished - 2005 Jan 10
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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