Abstract
The characteristics of radio-frequency magnetron sputtered BaTa2O6 thin films with aluminum (Al) top and indium tin oxide (ITO) bottom electrodes have been investigated as a function of applied field and temperature. The optical transmittance in the visible range was in range of 80-90% regardless of the substrate temperature. The dielectric constant increased from 20 to 30 with increasing the substrate temperature and nearly independent of the frequency in the range of 0.3-100 kHz but the loss factors increased with increasing the substrate temperature at high frequency. The leakage currents of BaTa2O6 thin film are in the order of 10-6-10-7 A/cm2 at the applied field of 1 MV/cm and the charge storage capacitance (εEbreakdown) are 5.64 (100°C), 10.6 (200°C) and 11.8 (300°C) μC/cm2. From the deposition temperature, voltage polarity and thickness dependence of leakage current, we can conclude that the dominant conduction mechanism is ascribed to Schottky emission at high electric field (> 1 MV/cm) and hopping conduction at low electric field (< 1 MV/cm). The Schottky barrier heights measured are 1.14 eV at Al(+) and 0.8 eV at Al(-).
| Original language | English |
|---|---|
| Pages (from-to) | 1189-1193 |
| Number of pages | 5 |
| Journal | Solid-State Electronics |
| Volume | 43 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 1999 Jul 1 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Electrical characteristics of rf-magnetron sputtered BaTa2O6 thin film. / Kim, Y. S.; Lee, Yun-Hi; Sung, Man Young.
In: Solid-State Electronics, Vol. 43, No. 7, 01.07.1999, p. 1189-1193.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electrical characteristics of rf-magnetron sputtered BaTa2O6 thin film
AU - Kim, Y. S.
AU - Lee, Yun-Hi
AU - Sung, Man Young
PY - 1999/7/1
Y1 - 1999/7/1
N2 - The characteristics of radio-frequency magnetron sputtered BaTa2O6 thin films with aluminum (Al) top and indium tin oxide (ITO) bottom electrodes have been investigated as a function of applied field and temperature. The optical transmittance in the visible range was in range of 80-90% regardless of the substrate temperature. The dielectric constant increased from 20 to 30 with increasing the substrate temperature and nearly independent of the frequency in the range of 0.3-100 kHz but the loss factors increased with increasing the substrate temperature at high frequency. The leakage currents of BaTa2O6 thin film are in the order of 10-6-10-7 A/cm2 at the applied field of 1 MV/cm and the charge storage capacitance (εEbreakdown) are 5.64 (100°C), 10.6 (200°C) and 11.8 (300°C) μC/cm2. From the deposition temperature, voltage polarity and thickness dependence of leakage current, we can conclude that the dominant conduction mechanism is ascribed to Schottky emission at high electric field (> 1 MV/cm) and hopping conduction at low electric field (< 1 MV/cm). The Schottky barrier heights measured are 1.14 eV at Al(+) and 0.8 eV at Al(-).
AB - The characteristics of radio-frequency magnetron sputtered BaTa2O6 thin films with aluminum (Al) top and indium tin oxide (ITO) bottom electrodes have been investigated as a function of applied field and temperature. The optical transmittance in the visible range was in range of 80-90% regardless of the substrate temperature. The dielectric constant increased from 20 to 30 with increasing the substrate temperature and nearly independent of the frequency in the range of 0.3-100 kHz but the loss factors increased with increasing the substrate temperature at high frequency. The leakage currents of BaTa2O6 thin film are in the order of 10-6-10-7 A/cm2 at the applied field of 1 MV/cm and the charge storage capacitance (εEbreakdown) are 5.64 (100°C), 10.6 (200°C) and 11.8 (300°C) μC/cm2. From the deposition temperature, voltage polarity and thickness dependence of leakage current, we can conclude that the dominant conduction mechanism is ascribed to Schottky emission at high electric field (> 1 MV/cm) and hopping conduction at low electric field (< 1 MV/cm). The Schottky barrier heights measured are 1.14 eV at Al(+) and 0.8 eV at Al(-).
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U2 - 10.1016/S0038-1101(99)00057-X
DO - 10.1016/S0038-1101(99)00057-X
M3 - Article
VL - 43
SP - 1189
EP - 1193
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 7
ER -