Electrical characteristics of rf-magnetron sputtered BaTa2O6 thin film

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The characteristics of radio-frequency magnetron sputtered BaTa2O6 thin films with aluminum (Al) top and indium tin oxide (ITO) bottom electrodes have been investigated as a function of applied field and temperature. The optical transmittance in the visible range was in range of 80-90% regardless of the substrate temperature. The dielectric constant increased from 20 to 30 with increasing the substrate temperature and nearly independent of the frequency in the range of 0.3-100 kHz but the loss factors increased with increasing the substrate temperature at high frequency. The leakage currents of BaTa2O6 thin film are in the order of 10-6-10-7 A/cm2 at the applied field of 1 MV/cm and the charge storage capacitance (εEbreakdown) are 5.64 (100°C), 10.6 (200°C) and 11.8 (300°C) μC/cm2. From the deposition temperature, voltage polarity and thickness dependence of leakage current, we can conclude that the dominant conduction mechanism is ascribed to Schottky emission at high electric field (> 1 MV/cm) and hopping conduction at low electric field (< 1 MV/cm). The Schottky barrier heights measured are 1.14 eV at Al(+) and 0.8 eV at Al(-).

Original languageEnglish
Pages (from-to)1189-1193
Number of pages5
JournalSolid-State Electronics
Volume43
Issue number7
DOIs
Publication statusPublished - 1999 Jul 1

Fingerprint

Thin films
Aluminum
thin films
aluminum
Leakage currents
leakage
Substrates
Temperature
temperature
Electric fields
conduction
electric fields
Opacity
Tin oxides
indium oxides
Indium
tin oxides
transmittance
polarity
radio frequencies

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Electrical characteristics of rf-magnetron sputtered BaTa2O6 thin film. / Kim, Y. S.; Lee, Yun-Hi; Sung, Man Young.

In: Solid-State Electronics, Vol. 43, No. 7, 01.07.1999, p. 1189-1193.

Research output: Contribution to journalArticle

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AB - The characteristics of radio-frequency magnetron sputtered BaTa2O6 thin films with aluminum (Al) top and indium tin oxide (ITO) bottom electrodes have been investigated as a function of applied field and temperature. The optical transmittance in the visible range was in range of 80-90% regardless of the substrate temperature. The dielectric constant increased from 20 to 30 with increasing the substrate temperature and nearly independent of the frequency in the range of 0.3-100 kHz but the loss factors increased with increasing the substrate temperature at high frequency. The leakage currents of BaTa2O6 thin film are in the order of 10-6-10-7 A/cm2 at the applied field of 1 MV/cm and the charge storage capacitance (εEbreakdown) are 5.64 (100°C), 10.6 (200°C) and 11.8 (300°C) μC/cm2. From the deposition temperature, voltage polarity and thickness dependence of leakage current, we can conclude that the dominant conduction mechanism is ascribed to Schottky emission at high electric field (> 1 MV/cm) and hopping conduction at low electric field (< 1 MV/cm). The Schottky barrier heights measured are 1.14 eV at Al(+) and 0.8 eV at Al(-).

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