Electrical Characteristics of Schottky Contacts to p-Type (001) GaP: Understanding of Carrier Transport Mechanism

Sungjoo Song, Dae Hyun Kim, Daesung Kang, Tae Yeon Seong

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Formation of low-resistance ohmic contacts to p-GaP is important for development of high-efficiency AlGaInP light-emitting diodes (LEDs), which emit light from red to yellow–green and have a wide variety of applications such as traffic light lamps, automobile tail lamps, and in biotherapy. The current flow behavior can be understood by investigating the effect of the Schottky barrier height (SBH; ΦB) on the work function of metals (ΦM). In this work, SBHs and their dependence on ΦM at (001) p-GaP surfaces were investigated. With increasing temperature, the SBH increased, while the ideality factor decreased. This behavior is explained by means of a thermionic field-emission (TFE) model. The SBH and ideal factor ranged from 0.805 eV to 0.852 eV and from 1.18 to 1.50, respectively, for different Schottky metals. The S-parameter (dΦB/dΦM) was estimated to be 0.025, with this approximately zero value implying that the surface Fermi level is virtually perfectly pinned at the surface states at ~0.85 eV above the valence-band edge.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalJournal of Electronic Materials
DOIs
Publication statusAccepted/In press - 2016 Jun 29

Fingerprint

Carrier transport
Electric lamps
luminaires
electric contacts
Metals
Thermionic emission
Ohmic contacts
thermionic emission
automobiles
low resistance
Scattering parameters
Surface states
Valence bands
Fermi level
Telecommunication traffic
Field emission
metals
traffic
Automobiles
Fermi surfaces

Keywords

  • AlGaInP
  • carrier transport mechanism
  • GaP
  • Schottky barrier height
  • TFE model

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Electrical Characteristics of Schottky Contacts to p-Type (001) GaP : Understanding of Carrier Transport Mechanism. / Song, Sungjoo; Kim, Dae Hyun; Kang, Daesung; Seong, Tae Yeon.

In: Journal of Electronic Materials, 29.06.2016, p. 1-5.

Research output: Contribution to journalArticle

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