Electrical characteristics of Si-nanoparticle/Si-nanowire-based field-effect transistors

Jeongmin Kang, Kihyun Keem, Dong Young Jeong, Miyoung Park, Dongmok Whang, Sangsig Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this study, Si-nanoparticle(NP)/Si-nanowire(NW)-based field-effect transistors (FETs) with a top-gate geometry were fabricated and characterized. In these FETs, Si NPs were embedded as localized trap sites in Al 2O3 top-gate layers coated on Si NW channels. Drain current versus drain voltage (I DS-V DS) and drain current versus gate voltage (I DS-V GS) were measured for the Si NP/Si NW-based FETs to investigate their electrical and memory characteristics. The Si NW channels were depleted at V GS= 9 V, indicating that the devices functioned as p-type depletion-mode FETs. The top-gate Si NW-based FETs decorated with Si NPs show counterclockwise hysteresis loops in the I DS-V GS curves, revealing their significant charge storage effect.

Original languageEnglish
Pages (from-to)3424-3428
Number of pages5
JournalJournal of Materials Science
Volume43
Issue number10
DOIs
Publication statusPublished - 2008 May 1

Fingerprint

Field effect transistors
Nanowires
nanowires
field effect transistors
Nanoparticles
nanoparticles
Drain current
Gates (transistor)
Electric potential
electric potential
Hysteresis loops
depletion
hysteresis
traps
Data storage equipment
Geometry
curves
geometry

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Electrical characteristics of Si-nanoparticle/Si-nanowire-based field-effect transistors. / Kang, Jeongmin; Keem, Kihyun; Jeong, Dong Young; Park, Miyoung; Whang, Dongmok; Kim, Sangsig.

In: Journal of Materials Science, Vol. 43, No. 10, 01.05.2008, p. 3424-3428.

Research output: Contribution to journalArticle

Kang, Jeongmin ; Keem, Kihyun ; Jeong, Dong Young ; Park, Miyoung ; Whang, Dongmok ; Kim, Sangsig. / Electrical characteristics of Si-nanoparticle/Si-nanowire-based field-effect transistors. In: Journal of Materials Science. 2008 ; Vol. 43, No. 10. pp. 3424-3428.
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