Electrical characteristics of silicon nanowire CMOS inverters under illumination

Jeuk Yoo, Yoonjoong Kim, Doohyeok Lim, Sangsig Kim

Research output: Contribution to journalArticle

Abstract

In this study, we examine the electrical characteristics of complementary metal?oxide?semiconductor (CMOS) inverters with silicon nanowire (SiNW) channels on transparent substrates under illumination. The electrical characteristics vary with the wavelength and power of light due to the variation in the generation rates of the electric-hole pairs. Compared to conventional optoelectronic devices that sense the on/off states by the variation in the current, our device achieves the sensing of the on/off states with more precision by using the voltage variation induced by the wavelength or intensity of light. The device was fabricated on transparent substrates to maximize the light absorption using conventional CMOS technologies. The key difference between our SiNW CMOS inverters and conventional optoelectronic devices is the ability to control the flow of charge carriers more effectively. The improved sensitivity accomplished with the use of SiNW CMOS inverters allows better control of the on/off states.

Original languageEnglish
Pages (from-to)3527-3534
Number of pages8
JournalOptics Express
Volume26
Issue number3
DOIs
Publication statusPublished - 2018 Feb 5

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inverters
CMOS
nanowires
illumination
silicon
optoelectronic devices
electromagnetic absorption
wavelengths
charge carriers
oxides
sensitivity
electric potential
metals

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Electrical characteristics of silicon nanowire CMOS inverters under illumination. / Yoo, Jeuk; Kim, Yoonjoong; Lim, Doohyeok; Kim, Sangsig.

In: Optics Express, Vol. 26, No. 3, 05.02.2018, p. 3527-3534.

Research output: Contribution to journalArticle

Yoo, Jeuk ; Kim, Yoonjoong ; Lim, Doohyeok ; Kim, Sangsig. / Electrical characteristics of silicon nanowire CMOS inverters under illumination. In: Optics Express. 2018 ; Vol. 26, No. 3. pp. 3527-3534.
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