Electrical characteristics of single and doubly connected Ni silicide nanowire grown by plasma-enhanced chemical vapor deposition

Joondong Kim, Dong Hun Shin, Eung Sug Lee, Chang-Soo Han, Yun Chang Park

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51 Citations (Scopus)

Abstract

Ni suicide nanowires were grown by plasma-enhanced chemical vapor deposition at 350°C. Transmission electron microscope analysis showed that Ni silicide nanowire has a single crystalline Ni3Si2 structure. The nanowire alignment was controlled by dielectrophoretic method and two nanowires were placed onto Pt electrodes under an ac biasing of 10 V p-p at 100 kHz. The electric characteristics of the nanowire were obtained from double connection and single connection of 5.07 and 10.44 kΩ, respectively. The resistivity values were obtained to be 183 and 208 μΩ cm, showing a uniform, performance of the connection.

Original languageEnglish
Article number253103
JournalApplied Physics Letters
Volume90
Issue number25
DOIs
Publication statusPublished - 2007 Aug 2
Externally publishedYes

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nanowires
vapor deposition
electron microscopes
alignment
electrical resistivity
electrodes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electrical characteristics of single and doubly connected Ni silicide nanowire grown by plasma-enhanced chemical vapor deposition. / Kim, Joondong; Shin, Dong Hun; Lee, Eung Sug; Han, Chang-Soo; Park, Yun Chang.

In: Applied Physics Letters, Vol. 90, No. 25, 253103, 02.08.2007.

Research output: Contribution to journalArticle

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