Electrical characteristics of single and doubly connected Ni silicide nanowire grown by plasma-enhanced chemical vapor deposition

Joondong Kim; Dong Hun Shin; Eung Sug Lee; Chang Soo Han; Yun Chang Park

doi:10.1063/1.2749430

Electrical characteristics of single and doubly connected Ni silicide nanowire grown by plasma-enhanced chemical vapor deposition

Joondong Kim, Dong Hun Shin, Eung Sug Lee, Chang Soo Han, Yun Chang Park

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

Ni suicide nanowires were grown by plasma-enhanced chemical vapor deposition at 350°C. Transmission electron microscope analysis showed that Ni silicide nanowire has a single crystalline Ni₃Si₂ structure. The nanowire alignment was controlled by dielectrophoretic method and two nanowires were placed onto Pt electrodes under an ac biasing of 10 V _p-p at 100 kHz. The electric characteristics of the nanowire were obtained from double connection and single connection of 5.07 and 10.44 kΩ, respectively. The resistivity values were obtained to be 183 and 208 μΩ cm, showing a uniform, performance of the connection.

Original language	English
Article number	253103
Journal	Applied Physics Letters
Volume	90
Issue number	25
DOIs	https://doi.org/10.1063/1.2749430
Publication status	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2749430

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title = "Electrical characteristics of single and doubly connected Ni silicide nanowire grown by plasma-enhanced chemical vapor deposition",

abstract = "Ni suicide nanowires were grown by plasma-enhanced chemical vapor deposition at 350°C. Transmission electron microscope analysis showed that Ni silicide nanowire has a single crystalline Ni3Si2 structure. The nanowire alignment was controlled by dielectrophoretic method and two nanowires were placed onto Pt electrodes under an ac biasing of 10 V p-p at 100 kHz. The electric characteristics of the nanowire were obtained from double connection and single connection of 5.07 and 10.44 kΩ, respectively. The resistivity values were obtained to be 183 and 208 μΩ cm, showing a uniform, performance of the connection.",

author = "Joondong Kim and Shin, {Dong Hun} and Lee, {Eung Sug} and Han, {Chang Soo} and Park, {Yun Chang}",

note = "Funding Information: The authors acknowledge the financial support from Daedeok Innopolis and Center for Nanoscale Mechatronics and Manufacturing of the 21C Frontier Research Program by the Ministry of Science and Technology (MOST) in Korea.",

year = "2007",

doi = "10.1063/1.2749430",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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T1 - Electrical characteristics of single and doubly connected Ni silicide nanowire grown by plasma-enhanced chemical vapor deposition

AU - Kim, Joondong

AU - Shin, Dong Hun

AU - Lee, Eung Sug

AU - Han, Chang Soo

AU - Park, Yun Chang

N1 - Funding Information: The authors acknowledge the financial support from Daedeok Innopolis and Center for Nanoscale Mechatronics and Manufacturing of the 21C Frontier Research Program by the Ministry of Science and Technology (MOST) in Korea.

PY - 2007

Y1 - 2007

N2 - Ni suicide nanowires were grown by plasma-enhanced chemical vapor deposition at 350°C. Transmission electron microscope analysis showed that Ni silicide nanowire has a single crystalline Ni3Si2 structure. The nanowire alignment was controlled by dielectrophoretic method and two nanowires were placed onto Pt electrodes under an ac biasing of 10 V p-p at 100 kHz. The electric characteristics of the nanowire were obtained from double connection and single connection of 5.07 and 10.44 kΩ, respectively. The resistivity values were obtained to be 183 and 208 μΩ cm, showing a uniform, performance of the connection.

AB - Ni suicide nanowires were grown by plasma-enhanced chemical vapor deposition at 350°C. Transmission electron microscope analysis showed that Ni silicide nanowire has a single crystalline Ni3Si2 structure. The nanowire alignment was controlled by dielectrophoretic method and two nanowires were placed onto Pt electrodes under an ac biasing of 10 V p-p at 100 kHz. The electric characteristics of the nanowire were obtained from double connection and single connection of 5.07 and 10.44 kΩ, respectively. The resistivity values were obtained to be 183 and 208 μΩ cm, showing a uniform, performance of the connection.

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Electrical characteristics of single and doubly connected Ni silicide nanowire grown by plasma-enhanced chemical vapor deposition

Abstract

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