Abstract
Ni suicide nanowires were grown by plasma-enhanced chemical vapor deposition at 350°C. Transmission electron microscope analysis showed that Ni silicide nanowire has a single crystalline Ni3Si2 structure. The nanowire alignment was controlled by dielectrophoretic method and two nanowires were placed onto Pt electrodes under an ac biasing of 10 V p-p at 100 kHz. The electric characteristics of the nanowire were obtained from double connection and single connection of 5.07 and 10.44 kΩ, respectively. The resistivity values were obtained to be 183 and 208 μΩ cm, showing a uniform, performance of the connection.
| Original language | English |
|---|---|
| Article number | 253103 |
| Journal | Applied Physics Letters |
| Volume | 90 |
| Issue number | 25 |
| DOIs | |
| Publication status | Published - 2007 Aug 2 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Electrical characteristics of single and doubly connected Ni silicide nanowire grown by plasma-enhanced chemical vapor deposition. / Kim, Joondong; Shin, Dong Hun; Lee, Eung Sug; Han, Chang-Soo; Park, Yun Chang.
In: Applied Physics Letters, Vol. 90, No. 25, 253103, 02.08.2007.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electrical characteristics of single and doubly connected Ni silicide nanowire grown by plasma-enhanced chemical vapor deposition
AU - Kim, Joondong
AU - Shin, Dong Hun
AU - Lee, Eung Sug
AU - Han, Chang-Soo
AU - Park, Yun Chang
PY - 2007/8/2
Y1 - 2007/8/2
N2 - Ni suicide nanowires were grown by plasma-enhanced chemical vapor deposition at 350°C. Transmission electron microscope analysis showed that Ni silicide nanowire has a single crystalline Ni3Si2 structure. The nanowire alignment was controlled by dielectrophoretic method and two nanowires were placed onto Pt electrodes under an ac biasing of 10 V p-p at 100 kHz. The electric characteristics of the nanowire were obtained from double connection and single connection of 5.07 and 10.44 kΩ, respectively. The resistivity values were obtained to be 183 and 208 μΩ cm, showing a uniform, performance of the connection.
AB - Ni suicide nanowires were grown by plasma-enhanced chemical vapor deposition at 350°C. Transmission electron microscope analysis showed that Ni silicide nanowire has a single crystalline Ni3Si2 structure. The nanowire alignment was controlled by dielectrophoretic method and two nanowires were placed onto Pt electrodes under an ac biasing of 10 V p-p at 100 kHz. The electric characteristics of the nanowire were obtained from double connection and single connection of 5.07 and 10.44 kΩ, respectively. The resistivity values were obtained to be 183 and 208 μΩ cm, showing a uniform, performance of the connection.
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U2 - 10.1063/1.2749430
DO - 10.1063/1.2749430
M3 - Article
AN - SCOPUS:34547357593
VL - 90
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 25
M1 - 253103
ER -