Electrical characteristics of single-silicon TFT structure with symmetric dual-gate for kink-effect suppression

Man Young Sung, Dae Yeon Lee, Jang Woo Ryu, Ey Goo Kang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this paper, a symmetric dual-gate single-Si TFT, which is composed of three split floating n+ zones, is simulated. This structure remarkably reduces the kink-effect and improves the on-current. Due to the separated floating n+ zones, the transistor channel region is split into four zones with different lengths defined by the floating n+ region. This structure allows effective reduction in the kink-effect, depending on the length of the two sub-channels. The on-current of the proposed dual-gate structure is 0.9 mA, while that of the conventional dual-gate structure is 0.5 mA, at both 12 V drain and 7 V gate. This result demonstrates 80% enhancement in on-current. In addition, the reduction of electric field in the channel region compared to conventional single-gate TFT and the reduction in output conductance in the saturation region, is observed. In addition, the reduction of hole concentration in the channel region, in order to effectively reduce the kink-effect, is confirmed.

Original languageEnglish
Pages (from-to)795-799
Number of pages5
JournalSolid-State Electronics
Volume50
Issue number5
DOIs
Publication statusPublished - 2006 May

Keywords

  • Dual-gate TFT
  • Kink-effect
  • Symmetric dual gate
  • TFT

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Electrical characteristics of single-silicon TFT structure with symmetric dual-gate for kink-effect suppression'. Together they form a unique fingerprint.

  • Cite this