Electrical characteristics of SnO₂ thin-film transistors fabricated on bendable substrates using reactive magnetron sputtering

Electrical characteristics of top-gate SnO₂ thin-film transistors (TFTs) fabricated on bendable substrates using direct current reactive magnetron sputtering were examined in this study. A TFT with an n-type SnO₂ channel film deposited with an oxygen partial pressure of 27% exhibits the best electrical performance. It had a field-effect mobility of 4.43 cm₂/V�s and an on/off-current ratio of 4.19 � 10⁶. This electrical performance is comparable and superior to n-type SnO₂ TFTs previously reported by other research groups. The electrical characteristics of our SnO₂ TFTs under tensile or compressive strain, and the recovery characteristics after bending stresses, will be discussed in this paper. This paper is the first report about the full functionality of n-type SnO₂ TFTs on flexible substrates under bending stresses, to the best of our knowledge.