We report on the electrical characteristics of the InAs self-assembled quantum dots (SA-QDs) resonant-cavity separate absorption, charge, and multiplication avalanche photodetector (RC-SACM APD) improved by optimizing the layer parameters, such as the anti-node position of an incident optical standing wave of the InAs QDs as an light-absorbing layer, the doping concentration of the Al0.2Ga0.8As charge layer (Na = 1 × 1018/cm3), and the layer thickness calibrated by using Bragg's quarter-wavelength rule. The optimized InAs QDs RC-SACM APD exhibited very low dark current of 163 pA, a high photocurrent of 66 nA, and a very low breakdown voltage of -12.3 V. In addition, the avalanche multiplication gain was remarkably increased up to 1648.
- Avalanche photodetector (APD)
- Charge and muiltiplication (SACM)
- InAs self-assembled quantum dots (SA-QDs)
- Resonant-cavity (RC)
- Separate absorption
ASJC Scopus subject areas
- Physics and Astronomy(all)