Electrical characteristics of the resonant-cavity separate absorption, charge, and multiplication avalanche photodetector improved by device optimization

Dong Ho Kim, Cheong Hyun Roh, Hong Joo Song, Hoon Kim, Cheol Koo Hanh, Shi Jong Leem, Tae Geun Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We report on the electrical characteristics of the InAs self-assembled quantum dots (SA-QDs) resonant-cavity separate absorption, charge, and multiplication avalanche photodetector (RC-SACM APD) improved by optimizing the layer parameters, such as the anti-node position of an incident optical standing wave of the InAs QDs as an light-absorbing layer, the doping concentration of the Al0.2Ga0.8As charge layer (Na = 1 × 1018/cm3), and the layer thickness calibrated by using Bragg's quarter-wavelength rule. The optimized InAs QDs RC-SACM APD exhibited very low dark current of 163 pA, a high photocurrent of 66 nA, and a very low breakdown voltage of -12.3 V. In addition, the avalanche multiplication gain was remarkably increased up to 1648.

Original languageEnglish
Pages (from-to)880-884
Number of pages5
JournalJournal of the Korean Physical Society
Volume50
Issue number3
Publication statusPublished - 2007 Mar 1

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Keywords

  • Avalanche photodetector (APD)
  • Charge and muiltiplication (SACM)
  • InAs self-assembled quantum dots (SA-QDs)
  • Resonant-cavity (RC)
  • Separate absorption

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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