Abstract
The electrical and thermal properties of Ru and Ru/Au ohmic contacts on two-step-surface-treated p-GaN have been investigated using current-voltage (I-V) measurements and Auger electron spectroscopy. It is shown that annealing at 700 °C for 2 min in a flowing N2 atmosphere improves the I-V characteristics of the contacts. For example, the annealed Ru and Ru/Au schemes produce a specific contact resistance of 3.4 (±0.9)×10-3 and 1.2 (±1.1)×10-3 Ωcm2, respectively. It is also shown that annealing results in a large reduction (by approximately 100 meV) in the Schottky barrier heights of the Ru and Ru/Au contacts, compared to the as-deposited ones. The electrical properties of the two-step-surface-treated Ru/Au contacts are compared with those of the conventionally treated contacts.
| Original language | English |
|---|---|
| Pages (from-to) | 94-98 |
| Number of pages | 5 |
| Journal | Journal of Electronic Materials |
| Volume | 30 |
| Issue number | 2 |
| Publication status | Published - 2001 Feb 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy (miscellaneous)