Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-type GaN

Ja Soon Jang; Dong Jun Kim; Seong Ju Park; Tae Yeon Seong

doi:10.1007/s11664-001-0106-z

Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-type GaN

Ja Soon Jang, Dong Jun Kim, Seong Ju Park, Tae Yeon Seong

Research output: Contribution to journal › Article

7 Citations (Scopus)

Abstract

The electrical and thermal properties of Ru and Ru/Au ohmic contacts on two-step-surface-treated p-GaN have been investigated using current-voltage (I-V) measurements and Auger electron spectroscopy. It is shown that annealing at 700 °C for 2 min in a flowing N₂ atmosphere improves the I-V characteristics of the contacts. For example, the annealed Ru and Ru/Au schemes produce a specific contact resistance of 3.4 (±0.9)×10^-3 and 1.2 (±1.1)×10^-3 Ωcm², respectively. It is also shown that annealing results in a large reduction (by approximately 100 meV) in the Schottky barrier heights of the Ru and Ru/Au contacts, compared to the as-deposited ones. The electrical properties of the two-step-surface-treated Ru/Au contacts are compared with those of the conventionally treated contacts.

Original language	English
Pages (from-to)	94-98
Number of pages	5
Journal	Journal of Electronic Materials
Volume	30
Issue number	2
DOIs	https://doi.org/10.1007/s11664-001-0106-z
Publication status	Published - 2001 Feb
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/s11664-001-0106-z

Fingerprint Dive into the research topics of 'Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-type GaN'. Together they form a unique fingerprint.

Cite this

Jang, J. S., Kim, D. J., Park, S. J., & Seong, T. Y. (2001). Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-type GaN. Journal of Electronic Materials, 30(2), 94-98. https://doi.org/10.1007/s11664-001-0106-z

@article{2a3b798233d0455084c9441282d5de09,

title = "Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-type GaN",

abstract = "The electrical and thermal properties of Ru and Ru/Au ohmic contacts on two-step-surface-treated p-GaN have been investigated using current-voltage (I-V) measurements and Auger electron spectroscopy. It is shown that annealing at 700 °C for 2 min in a flowing N2 atmosphere improves the I-V characteristics of the contacts. For example, the annealed Ru and Ru/Au schemes produce a specific contact resistance of 3.4 (±0.9)×10-3 and 1.2 (±1.1)×10-3 Ωcm2, respectively. It is also shown that annealing results in a large reduction (by approximately 100 meV) in the Schottky barrier heights of the Ru and Ru/Au contacts, compared to the as-deposited ones. The electrical properties of the two-step-surface-treated Ru/Au contacts are compared with those of the conventionally treated contacts.",

author = "Jang, {Ja Soon} and Kim, {Dong Jun} and Park, {Seong Ju} and Seong, {Tae Yeon}",

year = "2001",

month = feb,

doi = "10.1007/s11664-001-0106-z",

language = "English",

volume = "30",

pages = "94--98",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "2",

}

TY - JOUR

T1 - Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-type GaN

AU - Jang, Ja Soon

AU - Kim, Dong Jun

AU - Park, Seong Ju

AU - Seong, Tae Yeon

PY - 2001/2

Y1 - 2001/2

N2 - The electrical and thermal properties of Ru and Ru/Au ohmic contacts on two-step-surface-treated p-GaN have been investigated using current-voltage (I-V) measurements and Auger electron spectroscopy. It is shown that annealing at 700 °C for 2 min in a flowing N2 atmosphere improves the I-V characteristics of the contacts. For example, the annealed Ru and Ru/Au schemes produce a specific contact resistance of 3.4 (±0.9)×10-3 and 1.2 (±1.1)×10-3 Ωcm2, respectively. It is also shown that annealing results in a large reduction (by approximately 100 meV) in the Schottky barrier heights of the Ru and Ru/Au contacts, compared to the as-deposited ones. The electrical properties of the two-step-surface-treated Ru/Au contacts are compared with those of the conventionally treated contacts.

AB - The electrical and thermal properties of Ru and Ru/Au ohmic contacts on two-step-surface-treated p-GaN have been investigated using current-voltage (I-V) measurements and Auger electron spectroscopy. It is shown that annealing at 700 °C for 2 min in a flowing N2 atmosphere improves the I-V characteristics of the contacts. For example, the annealed Ru and Ru/Au schemes produce a specific contact resistance of 3.4 (±0.9)×10-3 and 1.2 (±1.1)×10-3 Ωcm2, respectively. It is also shown that annealing results in a large reduction (by approximately 100 meV) in the Schottky barrier heights of the Ru and Ru/Au contacts, compared to the as-deposited ones. The electrical properties of the two-step-surface-treated Ru/Au contacts are compared with those of the conventionally treated contacts.

UR - http://www.scopus.com/inward/record.url?scp=0035251472&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035251472&partnerID=8YFLogxK

U2 - 10.1007/s11664-001-0106-z

DO - 10.1007/s11664-001-0106-z

M3 - Article

AN - SCOPUS:0035251472

VL - 30

SP - 94

EP - 98

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 2

ER -