Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-type GaN

Ja Soon Jang, Dong J. Kim, Seong J. Park, Tae Yeon Seong

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The electrical and thermal properties of Ru and Ru/Au ohmic contacts on two-step-surface-treated p-GaN have been investigated using current-voltage (I-V) measurements and Auger electron spectroscopy. It is shown that annealing at 700 °C for 2 min in a flowing N2 atmosphere improves the I-V characteristics of the contacts. For example, the annealed Ru and Ru/Au schemes produce a specific contact resistance of 3.4 (±0.9)×10-3 and 1.2 (±1.1)×10-3 Ωcm2, respectively. It is also shown that annealing results in a large reduction (by approximately 100 meV) in the Schottky barrier heights of the Ru and Ru/Au contacts, compared to the as-deposited ones. The electrical properties of the two-step-surface-treated Ru/Au contacts are compared with those of the conventionally treated contacts.

Original languageEnglish
Pages (from-to)94-98
Number of pages5
JournalJournal of Electronic Materials
Volume30
Issue number2
Publication statusPublished - 2001 Feb 1
Externally publishedYes

Fingerprint

Ohmic contacts
electric contacts
Electric properties
Annealing
Voltage measurement
Electric current measurement
Auger electron spectroscopy
Contact resistance
Current voltage characteristics
electrical properties
annealing
Thermodynamic properties
contact resistance
electrical measurement
Auger spectroscopy
electron spectroscopy
thermodynamic properties
atmospheres
electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

Cite this

Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-type GaN. / Jang, Ja Soon; Kim, Dong J.; Park, Seong J.; Seong, Tae Yeon.

In: Journal of Electronic Materials, Vol. 30, No. 2, 01.02.2001, p. 94-98.

Research output: Contribution to journalArticle

@article{2a3b798233d0455084c9441282d5de09,
title = "Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-type GaN",
abstract = "The electrical and thermal properties of Ru and Ru/Au ohmic contacts on two-step-surface-treated p-GaN have been investigated using current-voltage (I-V) measurements and Auger electron spectroscopy. It is shown that annealing at 700 °C for 2 min in a flowing N2 atmosphere improves the I-V characteristics of the contacts. For example, the annealed Ru and Ru/Au schemes produce a specific contact resistance of 3.4 (±0.9)×10-3 and 1.2 (±1.1)×10-3 Ωcm2, respectively. It is also shown that annealing results in a large reduction (by approximately 100 meV) in the Schottky barrier heights of the Ru and Ru/Au contacts, compared to the as-deposited ones. The electrical properties of the two-step-surface-treated Ru/Au contacts are compared with those of the conventionally treated contacts.",
author = "Jang, {Ja Soon} and Kim, {Dong J.} and Park, {Seong J.} and Seong, {Tae Yeon}",
year = "2001",
month = "2",
day = "1",
language = "English",
volume = "30",
pages = "94--98",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "2",

}

TY - JOUR

T1 - Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-type GaN

AU - Jang, Ja Soon

AU - Kim, Dong J.

AU - Park, Seong J.

AU - Seong, Tae Yeon

PY - 2001/2/1

Y1 - 2001/2/1

N2 - The electrical and thermal properties of Ru and Ru/Au ohmic contacts on two-step-surface-treated p-GaN have been investigated using current-voltage (I-V) measurements and Auger electron spectroscopy. It is shown that annealing at 700 °C for 2 min in a flowing N2 atmosphere improves the I-V characteristics of the contacts. For example, the annealed Ru and Ru/Au schemes produce a specific contact resistance of 3.4 (±0.9)×10-3 and 1.2 (±1.1)×10-3 Ωcm2, respectively. It is also shown that annealing results in a large reduction (by approximately 100 meV) in the Schottky barrier heights of the Ru and Ru/Au contacts, compared to the as-deposited ones. The electrical properties of the two-step-surface-treated Ru/Au contacts are compared with those of the conventionally treated contacts.

AB - The electrical and thermal properties of Ru and Ru/Au ohmic contacts on two-step-surface-treated p-GaN have been investigated using current-voltage (I-V) measurements and Auger electron spectroscopy. It is shown that annealing at 700 °C for 2 min in a flowing N2 atmosphere improves the I-V characteristics of the contacts. For example, the annealed Ru and Ru/Au schemes produce a specific contact resistance of 3.4 (±0.9)×10-3 and 1.2 (±1.1)×10-3 Ωcm2, respectively. It is also shown that annealing results in a large reduction (by approximately 100 meV) in the Schottky barrier heights of the Ru and Ru/Au contacts, compared to the as-deposited ones. The electrical properties of the two-step-surface-treated Ru/Au contacts are compared with those of the conventionally treated contacts.

UR - http://www.scopus.com/inward/record.url?scp=0035251472&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035251472&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0035251472

VL - 30

SP - 94

EP - 98

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 2

ER -