Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-type GaN

Ja Soon Jang; Dong Jun Kim; Seong Ju Park; Tae Yeon Seong

doi:10.1007/s11664-001-0106-z

Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-type GaN

Ja Soon Jang, Dong Jun Kim, Seong Ju Park, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The electrical and thermal properties of Ru and Ru/Au ohmic contacts on two-step-surface-treated p-GaN have been investigated using current-voltage (I-V) measurements and Auger electron spectroscopy. It is shown that annealing at 700 °C for 2 min in a flowing N₂ atmosphere improves the I-V characteristics of the contacts. For example, the annealed Ru and Ru/Au schemes produce a specific contact resistance of 3.4 (±0.9)×10^-3 and 1.2 (±1.1)×10^-3 Ωcm², respectively. It is also shown that annealing results in a large reduction (by approximately 100 meV) in the Schottky barrier heights of the Ru and Ru/Au contacts, compared to the as-deposited ones. The electrical properties of the two-step-surface-treated Ru/Au contacts are compared with those of the conventionally treated contacts.

Original language	English
Pages (from-to)	94-98
Number of pages	5
Journal	Journal of Electronic Materials
Volume	30
Issue number	2
DOIs	https://doi.org/10.1007/s11664-001-0106-z
Publication status	Published - 2001 Feb
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-001-0106-z

Cite this

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title = "Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-type GaN",

abstract = "The electrical and thermal properties of Ru and Ru/Au ohmic contacts on two-step-surface-treated p-GaN have been investigated using current-voltage (I-V) measurements and Auger electron spectroscopy. It is shown that annealing at 700 °C for 2 min in a flowing N2 atmosphere improves the I-V characteristics of the contacts. For example, the annealed Ru and Ru/Au schemes produce a specific contact resistance of 3.4 (±0.9)×10-3 and 1.2 (±1.1)×10-3 Ωcm2, respectively. It is also shown that annealing results in a large reduction (by approximately 100 meV) in the Schottky barrier heights of the Ru and Ru/Au contacts, compared to the as-deposited ones. The electrical properties of the two-step-surface-treated Ru/Au contacts are compared with those of the conventionally treated contacts.",

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T1 - Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-type GaN

AU - Jang, Ja Soon

AU - Kim, Dong Jun

AU - Park, Seong Ju

AU - Seong, Tae Yeon

PY - 2001/2

Y1 - 2001/2

N2 - The electrical and thermal properties of Ru and Ru/Au ohmic contacts on two-step-surface-treated p-GaN have been investigated using current-voltage (I-V) measurements and Auger electron spectroscopy. It is shown that annealing at 700 °C for 2 min in a flowing N2 atmosphere improves the I-V characteristics of the contacts. For example, the annealed Ru and Ru/Au schemes produce a specific contact resistance of 3.4 (±0.9)×10-3 and 1.2 (±1.1)×10-3 Ωcm2, respectively. It is also shown that annealing results in a large reduction (by approximately 100 meV) in the Schottky barrier heights of the Ru and Ru/Au contacts, compared to the as-deposited ones. The electrical properties of the two-step-surface-treated Ru/Au contacts are compared with those of the conventionally treated contacts.

AB - The electrical and thermal properties of Ru and Ru/Au ohmic contacts on two-step-surface-treated p-GaN have been investigated using current-voltage (I-V) measurements and Auger electron spectroscopy. It is shown that annealing at 700 °C for 2 min in a flowing N2 atmosphere improves the I-V characteristics of the contacts. For example, the annealed Ru and Ru/Au schemes produce a specific contact resistance of 3.4 (±0.9)×10-3 and 1.2 (±1.1)×10-3 Ωcm2, respectively. It is also shown that annealing results in a large reduction (by approximately 100 meV) in the Schottky barrier heights of the Ru and Ru/Au contacts, compared to the as-deposited ones. The electrical properties of the two-step-surface-treated Ru/Au contacts are compared with those of the conventionally treated contacts.

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Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-type GaN

Abstract

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