Electrical characteristics of vertical Ni/β-Ga2O3 schottky barrier diodes at high temperatures

Sooyeoun Oh, Gwangseok Yang, Ji Hyun Kim

Research output: Contribution to journalArticle

61 Citations (Scopus)

Abstract

Vertical geometry β-Ga2O3 Schottky barrier diodes (SBDs) were fabricated and the rectifying forward and reverse current-voltage characteristics were demonstrated at elevated temperatures for a freestanding β-Ga2O3 material with an ultra-wide bandgap of ∼4.9 eV. The breakdown voltage of the fabricated β-Ga2O3 SBDs with a punch-through configuration was ∼210 V without the edgetermination method. The electrical field and potential distributions were numerically simulated with a finite element method. The on-resistance was 2582 Ω · cm2 at 25°C, and decreased to 0.043 Ω · cm2 at 225°C. The figure-of-merit (VBR 2/Ron) was approximately 17.1W · cm-2. The temperature-dependent Schottky barrier height and ideality factor were also determined. The developed β-Ga2O3 SBDs with the punch-through structure exhibit great potential for high power and high temperature applications.

Original languageEnglish
Pages (from-to)Q3022-Q3025
JournalECS Journal of Solid State Science and Technology
Volume6
Issue number2
DOIs
Publication statusPublished - 2017

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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