Electrical characteristics of ZnO nanowire-based field-effect transistors on flexible plastic substrates

Jeongmin Kang, Kihyun Keem, Dong Young Jeong, Sangsig Kim

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

ZnO nanowire field effect transistors were fabricated on flexible substrates of poly(ether sulfone) (PES) by bottom-up and photolithographic processes and their electrical characteristics were investigated. The fabrication of the flexible devices was achieved at a processing temperature of 150°C. A representative top-gate ZnO nanowire field effect transistor (FET) on a flexible substrate exhibits a peak transconductance of 179 nS, a field effect mobility of 10.7 cm2 V-1 s-1, and an Ion/Ioff ratio of 106. When the PES substrate is bent under a strain of 0.77%, the decrement of the drain current for the FET at VGS = 10V is less than 3%.

Original languageEnglish
Pages (from-to)6227-6229
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number9 B
DOIs
Publication statusPublished - 2007 Sep 20

Fingerprint

Field effect transistors
Nanowires
nanowires
plastics
field effect transistors
Plastics
Substrates
sulfones
Drain current
Transconductance
transconductance
Ethers
ethers
Fabrication
fabrication
Ions
Processing
ions
Temperature
temperature

Keywords

  • FET
  • Flexible
  • Nanowire
  • ZnO

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electrical characteristics of ZnO nanowire-based field-effect transistors on flexible plastic substrates. / Kang, Jeongmin; Keem, Kihyun; Jeong, Dong Young; Kim, Sangsig.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 9 B, 20.09.2007, p. 6227-6229.

Research output: Contribution to journalArticle

@article{5175a40311e34773817ac16d2386bf85,
title = "Electrical characteristics of ZnO nanowire-based field-effect transistors on flexible plastic substrates",
abstract = "ZnO nanowire field effect transistors were fabricated on flexible substrates of poly(ether sulfone) (PES) by bottom-up and photolithographic processes and their electrical characteristics were investigated. The fabrication of the flexible devices was achieved at a processing temperature of 150°C. A representative top-gate ZnO nanowire field effect transistor (FET) on a flexible substrate exhibits a peak transconductance of 179 nS, a field effect mobility of 10.7 cm2 V-1 s-1, and an Ion/Ioff ratio of 106. When the PES substrate is bent under a strain of 0.77{\%}, the decrement of the drain current for the FET at VGS = 10V is less than 3{\%}.",
keywords = "FET, Flexible, Nanowire, ZnO",
author = "Jeongmin Kang and Kihyun Keem and Jeong, {Dong Young} and Sangsig Kim",
year = "2007",
month = "9",
day = "20",
doi = "10.1143/JJAP.46.6227",
language = "English",
volume = "46",
pages = "6227--6229",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "9 B",

}

TY - JOUR

T1 - Electrical characteristics of ZnO nanowire-based field-effect transistors on flexible plastic substrates

AU - Kang, Jeongmin

AU - Keem, Kihyun

AU - Jeong, Dong Young

AU - Kim, Sangsig

PY - 2007/9/20

Y1 - 2007/9/20

N2 - ZnO nanowire field effect transistors were fabricated on flexible substrates of poly(ether sulfone) (PES) by bottom-up and photolithographic processes and their electrical characteristics were investigated. The fabrication of the flexible devices was achieved at a processing temperature of 150°C. A representative top-gate ZnO nanowire field effect transistor (FET) on a flexible substrate exhibits a peak transconductance of 179 nS, a field effect mobility of 10.7 cm2 V-1 s-1, and an Ion/Ioff ratio of 106. When the PES substrate is bent under a strain of 0.77%, the decrement of the drain current for the FET at VGS = 10V is less than 3%.

AB - ZnO nanowire field effect transistors were fabricated on flexible substrates of poly(ether sulfone) (PES) by bottom-up and photolithographic processes and their electrical characteristics were investigated. The fabrication of the flexible devices was achieved at a processing temperature of 150°C. A representative top-gate ZnO nanowire field effect transistor (FET) on a flexible substrate exhibits a peak transconductance of 179 nS, a field effect mobility of 10.7 cm2 V-1 s-1, and an Ion/Ioff ratio of 106. When the PES substrate is bent under a strain of 0.77%, the decrement of the drain current for the FET at VGS = 10V is less than 3%.

KW - FET

KW - Flexible

KW - Nanowire

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=34648815948&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34648815948&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.6227

DO - 10.1143/JJAP.46.6227

M3 - Article

AN - SCOPUS:34648815948

VL - 46

SP - 6227

EP - 6229

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 9 B

ER -