Electrical characteristics of ZnO nanowire-based field-effect transistors on flexible plastic substrates

Jeongmin Kang, Kihyun Keem, Dong Young Jeong, Sangsig Kim

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ZnO nanowire field effect transistors were fabricated on flexible substrates of poly(ether sulfone) (PES) by bottom-up and photolithographic processes and their electrical characteristics were investigated. The fabrication of the flexible devices was achieved at a processing temperature of 150°C. A representative top-gate ZnO nanowire field effect transistor (FET) on a flexible substrate exhibits a peak transconductance of 179 nS, a field effect mobility of 10.7 cm2 V-1 s-1, and an Ion/Ioff ratio of 106. When the PES substrate is bent under a strain of 0.77%, the decrement of the drain current for the FET at VGS = 10V is less than 3%.

Original languageEnglish
Pages (from-to)6227-6229
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number9 B
Publication statusPublished - 2007 Sep 20



  • FET
  • Flexible
  • Nanowire
  • ZnO

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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