ZnO nanowire field effect transistors were fabricated on flexible substrates of poly(ether sulfone) (PES) by bottom-up and photolithographic processes and their electrical characteristics were investigated. The fabrication of the flexible devices was achieved at a processing temperature of 150°C. A representative top-gate ZnO nanowire field effect transistor (FET) on a flexible substrate exhibits a peak transconductance of 179 nS, a field effect mobility of 10.7 cm2 V-1 s-1, and an Ion/Ioff ratio of 106. When the PES substrate is bent under a strain of 0.77%, the decrement of the drain current for the FET at VGS = 10V is less than 3%.
|Number of pages||3|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||9 B|
|Publication status||Published - 2007 Sep 20|
ASJC Scopus subject areas
- Physics and Astronomy(all)