Electrical characterization of 5 MeV proton-irradiated few layer graphene

G. Ko, H. Y. Kim, F. Ren, S. J. Pearton, Ji Hyun Kim

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Few layer graphene (FLG) samples contacted were irradiated with protons at an energy of 5 MeV and doses up to 2× 1015 /cm2. The electrical properties of ungated FLG sheets contacted by Pd/Au in a source (S)-drain (D) configuration, including VDS - IDS, VG - IDS, and the hole mobility, were compared before and after proton irradiation. After irradiation, it is observed that the ambipolar conduction of the FLG sheets was changed to a p-type conduction. The field-effect mobility of the hole carriers and the resistance in the graphene sheets greatly decreased because the proton irradiation increased the number of the surface states.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Issue number4
Publication statusPublished - 2010 Feb 22


ASJC Scopus subject areas

  • Electrochemistry
  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Chemical Engineering(all)
  • Physical and Theoretical Chemistry

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