Electrical characterization of 5 MeV proton-irradiated few layer graphene

G. Ko, H. Y. Kim, F. Ren, S. J. Pearton, J. Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Few layer graphene (FLG) samples contacted were irradiated with protons at an energy of 5 MeV and doses up to 2× 1015 /cm2. The electrical properties of ungated FLG sheets contacted by Pd/Au in a source (S)-drain (D) configuration, including VDS - IDS, VG - IDS, and the hole mobility, were compared before and after proton irradiation. After irradiation, it is observed that the ambipolar conduction of the FLG sheets was changed to a p-type conduction. The field-effect mobility of the hole carriers and the resistance in the graphene sheets greatly decreased because the proton irradiation increased the number of the surface states.

Original languageEnglish
Pages (from-to)K32-K34
JournalElectrochemical and Solid-State Letters
Volume13
Issue number4
DOIs
Publication statusPublished - 2010

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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