Electrical characterization of GaN metal oxide semiconductor diode using Sc2O3 as the gate oxide

R. Mehandru, B. P. Gila, Ji Hyun Kim, J. W. Johnson, K. P. Lee, B. Luo, A. H. Onstine, C. R. Abernathy, S. J. Pearton, F. Rena

Research output: Contribution to journalArticle

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Abstract

GaN metal oxide semiconductor diodes were demonstrated utilizing Sc2O3 as the gate oxide. Sc2O3 was grown at 100°C on MOCVD grown n-GaN layers in a molecular beam epitaxy system, using a scandium elemental source and an electron cyclotron resonance oxygen plasma. Ar/Cl2 based discharges were used to remove Sc2O3, to expose the underlying n-GaN for ohmic metal deposition in an inductively coupled plasma system. Electron beam deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallizations, respectively. An interface trap density of 5 × 1011 eV-1 cm-2 was obtained with the Terman method. Conductance-voltage measurements were also used to estimate the interface trap density and a slightly higher value was obtained as compared to the Terman method. Results of capacitance measurements at elevated temperature (up to 300°C) indicated the presence of deep states near the interface.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume5
Issue number7
DOIs
Publication statusPublished - 2002 Jul 1
Externally publishedYes

Fingerprint

Semiconductor diodes
semiconductor diodes
metal oxide semiconductors
Oxides
Metals
Scandium
Electron cyclotron resonance
Capacitance measurement
oxides
Voltage measurement
Metallorganic chemical vapor deposition
Inductively coupled plasma
Metallizing
Molecular beam epitaxy
traps
Electron beams
scandium
oxygen plasma
electron cyclotron resonance
Plasmas

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Electrical characterization of GaN metal oxide semiconductor diode using Sc2O3 as the gate oxide. / Mehandru, R.; Gila, B. P.; Kim, Ji Hyun; Johnson, J. W.; Lee, K. P.; Luo, B.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Rena, F.

In: Electrochemical and Solid-State Letters, Vol. 5, No. 7, 01.07.2002.

Research output: Contribution to journalArticle

Mehandru, R, Gila, BP, Kim, JH, Johnson, JW, Lee, KP, Luo, B, Onstine, AH, Abernathy, CR, Pearton, SJ & Rena, F 2002, 'Electrical characterization of GaN metal oxide semiconductor diode using Sc2O3 as the gate oxide', Electrochemical and Solid-State Letters, vol. 5, no. 7. https://doi.org/10.1149/1.1479298
Mehandru, R. ; Gila, B. P. ; Kim, Ji Hyun ; Johnson, J. W. ; Lee, K. P. ; Luo, B. ; Onstine, A. H. ; Abernathy, C. R. ; Pearton, S. J. ; Rena, F. / Electrical characterization of GaN metal oxide semiconductor diode using Sc2O3 as the gate oxide. In: Electrochemical and Solid-State Letters. 2002 ; Vol. 5, No. 7.
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AU - Kim, Ji Hyun

AU - Johnson, J. W.

AU - Lee, K. P.

AU - Luo, B.

AU - Onstine, A. H.

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N2 - GaN metal oxide semiconductor diodes were demonstrated utilizing Sc2O3 as the gate oxide. Sc2O3 was grown at 100°C on MOCVD grown n-GaN layers in a molecular beam epitaxy system, using a scandium elemental source and an electron cyclotron resonance oxygen plasma. Ar/Cl2 based discharges were used to remove Sc2O3, to expose the underlying n-GaN for ohmic metal deposition in an inductively coupled plasma system. Electron beam deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallizations, respectively. An interface trap density of 5 × 1011 eV-1 cm-2 was obtained with the Terman method. Conductance-voltage measurements were also used to estimate the interface trap density and a slightly higher value was obtained as compared to the Terman method. Results of capacitance measurements at elevated temperature (up to 300°C) indicated the presence of deep states near the interface.

AB - GaN metal oxide semiconductor diodes were demonstrated utilizing Sc2O3 as the gate oxide. Sc2O3 was grown at 100°C on MOCVD grown n-GaN layers in a molecular beam epitaxy system, using a scandium elemental source and an electron cyclotron resonance oxygen plasma. Ar/Cl2 based discharges were used to remove Sc2O3, to expose the underlying n-GaN for ohmic metal deposition in an inductively coupled plasma system. Electron beam deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallizations, respectively. An interface trap density of 5 × 1011 eV-1 cm-2 was obtained with the Terman method. Conductance-voltage measurements were also used to estimate the interface trap density and a slightly higher value was obtained as compared to the Terman method. Results of capacitance measurements at elevated temperature (up to 300°C) indicated the presence of deep states near the interface.

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