Electrical characterization of GaN metal oxide semiconductor diode using Sc 2O 3 as the gate oxide

R. Mehandru, B. P. Gila, Ji Hyun Kim, J. W. Johnson, K. P. Lee, B. Luo, A. H. Onstine, C. R. Abernathy, S. J. Pearton, F. Ren

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaN metal oxide semiconductor diodes were demonstrated utilizing Sc 2O 3 as the gate oxide. Sc 2O 3 was grown at 100°C on MOCVD grown n-GaN layers in a molecular beam epitaxy (MBE) system, using a scandium elemental source and an Electron Cyclotron Resonance (ECR) oxygen plasma. Ar/Cl 2 based discharges was used to remove Sc 2O 3, in order to expose the underlying n-GaN for ohmic metal deposition in an Inductively Coupled Plasma system. Electron beam deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallizations, respectively. An interface trap density of 5 × 10 11 eV -1 cm -2 was obtained with the Terman method. Conductance-voltage measurements were also used to estimate the interface trap density and a slightly higher number was obtained as compared to the Terman method. Results of capacitance measurements at elevated temperature (up to 300°C) indicated the presence of deep states near the interface.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsJ.E. Northrup, J. Neugebauer, D.C. Look, S.F. Chichibu, H. Riechert
Pages767-772
Number of pages6
Volume693
Publication statusPublished - 2002
Externally publishedYes
EventGaN and Related Alloys-2001 - Boston, MA, United States
Duration: 2001 Nov 262001 Nov 30

Other

OtherGaN and Related Alloys-2001
CountryUnited States
CityBoston, MA
Period01/11/2601/11/30

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Semiconductor diodes
Oxides
Scandium
Metals
Electron cyclotron resonance
Capacitance measurement
Voltage measurement
Metallorganic chemical vapor deposition
Inductively coupled plasma
Metallizing
Molecular beam epitaxy
Electron beams
Oxygen
Plasmas
Temperature
Oxide semiconductors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Mehandru, R., Gila, B. P., Kim, J. H., Johnson, J. W., Lee, K. P., Luo, B., ... Ren, F. (2002). Electrical characterization of GaN metal oxide semiconductor diode using Sc 2O 3 as the gate oxide In J. E. Northrup, J. Neugebauer, D. C. Look, S. F. Chichibu, & H. Riechert (Eds.), Materials Research Society Symposium - Proceedings (Vol. 693, pp. 767-772)

Electrical characterization of GaN metal oxide semiconductor diode using Sc 2O 3 as the gate oxide . / Mehandru, R.; Gila, B. P.; Kim, Ji Hyun; Johnson, J. W.; Lee, K. P.; Luo, B.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Ren, F.

Materials Research Society Symposium - Proceedings. ed. / J.E. Northrup; J. Neugebauer; D.C. Look; S.F. Chichibu; H. Riechert. Vol. 693 2002. p. 767-772.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mehandru, R, Gila, BP, Kim, JH, Johnson, JW, Lee, KP, Luo, B, Onstine, AH, Abernathy, CR, Pearton, SJ & Ren, F 2002, Electrical characterization of GaN metal oxide semiconductor diode using Sc 2O 3 as the gate oxide in JE Northrup, J Neugebauer, DC Look, SF Chichibu & H Riechert (eds), Materials Research Society Symposium - Proceedings. vol. 693, pp. 767-772, GaN and Related Alloys-2001, Boston, MA, United States, 01/11/26.
Mehandru R, Gila BP, Kim JH, Johnson JW, Lee KP, Luo B et al. Electrical characterization of GaN metal oxide semiconductor diode using Sc 2O 3 as the gate oxide In Northrup JE, Neugebauer J, Look DC, Chichibu SF, Riechert H, editors, Materials Research Society Symposium - Proceedings. Vol. 693. 2002. p. 767-772
Mehandru, R. ; Gila, B. P. ; Kim, Ji Hyun ; Johnson, J. W. ; Lee, K. P. ; Luo, B. ; Onstine, A. H. ; Abernathy, C. R. ; Pearton, S. J. ; Ren, F. / Electrical characterization of GaN metal oxide semiconductor diode using Sc 2O 3 as the gate oxide Materials Research Society Symposium - Proceedings. editor / J.E. Northrup ; J. Neugebauer ; D.C. Look ; S.F. Chichibu ; H. Riechert. Vol. 693 2002. pp. 767-772
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AU - Kim, Ji Hyun

AU - Johnson, J. W.

AU - Lee, K. P.

AU - Luo, B.

AU - Onstine, A. H.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Ren, F.

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N2 - GaN metal oxide semiconductor diodes were demonstrated utilizing Sc 2O 3 as the gate oxide. Sc 2O 3 was grown at 100°C on MOCVD grown n-GaN layers in a molecular beam epitaxy (MBE) system, using a scandium elemental source and an Electron Cyclotron Resonance (ECR) oxygen plasma. Ar/Cl 2 based discharges was used to remove Sc 2O 3, in order to expose the underlying n-GaN for ohmic metal deposition in an Inductively Coupled Plasma system. Electron beam deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallizations, respectively. An interface trap density of 5 × 10 11 eV -1 cm -2 was obtained with the Terman method. Conductance-voltage measurements were also used to estimate the interface trap density and a slightly higher number was obtained as compared to the Terman method. Results of capacitance measurements at elevated temperature (up to 300°C) indicated the presence of deep states near the interface.

AB - GaN metal oxide semiconductor diodes were demonstrated utilizing Sc 2O 3 as the gate oxide. Sc 2O 3 was grown at 100°C on MOCVD grown n-GaN layers in a molecular beam epitaxy (MBE) system, using a scandium elemental source and an Electron Cyclotron Resonance (ECR) oxygen plasma. Ar/Cl 2 based discharges was used to remove Sc 2O 3, in order to expose the underlying n-GaN for ohmic metal deposition in an Inductively Coupled Plasma system. Electron beam deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallizations, respectively. An interface trap density of 5 × 10 11 eV -1 cm -2 was obtained with the Terman method. Conductance-voltage measurements were also used to estimate the interface trap density and a slightly higher number was obtained as compared to the Terman method. Results of capacitance measurements at elevated temperature (up to 300°C) indicated the presence of deep states near the interface.

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