Electrical characterization of GaN metal oxide semiconductor diode using Sc₂O₃ as the gate oxide

Engineering & Materials Science

• Semiconductor diodes 100%
• Oxide semiconductors 70%
• Electron cyclotron resonance 53%
• Oxides 51%
• Scandium 47%
• Metallorganic chemical vapor deposition 47%
• Molecular beam epitaxy 46%
• Inductively coupled plasma 44%
• Capacitance measurement 43%
• Metals 38%
• Voltage measurement 37%
• Electron beams 35%
• Metallizing 34%
• Plasmas 27%
• Oxygen 24%
• Temperature 11%

Chemical Compounds

• Interface Trap 99%
• Trap Density Measurement 90%
• Metal Oxide 49%
• Electron Cyclotron Resonance 46%
• Semiconductor 45%
• Molecular Beam Epitaxy 42%
• Electron Beam 32%
• Oxide 32%
• Inductively Coupled Plasma 29%
• Chemical Element 22%
• Plasma 18%
• Dioxygen 14%
• Metal 13%

Physics & Astronomy

• semiconductor diodes 75%
• metal oxide semiconductors 61%
• oxides 37%
• characterization 33%
• traps 29%
• scandium 25%
• oxygen plasma 23%
• electron cyclotron resonance 21%
• electrical measurement 19%
• metalorganic chemical vapor deposition 18%
• molecular beam epitaxy 16%
• capacitance 15%
• electron beams 14%
• estimates 11%
• metals 10%
• temperature 5%