Electrical characterization of GaN metal oxide semiconductor diode using Sc2O3 as the gate oxide
R. Mehandru, B. P. Gila, J. Kim, J. W. Johnson, K. P. Lee, B. Luo, A. H. Onstine, C. R. Abernathy, S. J. Pearton, F. Ren
Research output: Contribution to journal › Conference article › peer-review
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