Abstract
GaN metal oxide semiconductor diodes were demonstrated utilizing MgO as the gate oxide. MgO was grown at 100°C on metal oxide chemical vapor deposition grown n-GaN in a molecular beam epitaxy system using a Mg elemental source and an electron cyclotron resonance oxygen plasma. H3PO4-based wet-chemical etcant was used to remove MgO to expose the underlying n-GaN for ohmic metal deposition. Electron deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallization, respectively. An interface trap density of low-to-mid-1011 eV-1 cm-2 was obtained from temperature conductance-voltage measurements. Terman method was also used to estimate the interface trap density, and a slightly lower number was obtained as compared to the conductance method. Results from elevated temperature (up to 300°C) conductance measurements showed an interface state density roughly three times higher (6 × 1011 eV-1 cm-2) than at 25°C.
Original language | English |
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Pages (from-to) | G482-G484 |
Journal | Journal of the Electrochemical Society |
Volume | 149 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2002 Aug |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry