Abstract
GaN metal oxide semiconductor diodes were demonstrated utilizing MgO as the gate oxide. MgO was grown at 100°C on metal oxide chemical vapor deposition grown n-GaN in a molecular beam epitaxy system using a Mg elemental source and an electron cyclotron resonance oxygen plasma. H3PO4-based wet-chemical etcant was used to remove MgO to expose the underlying n-GaN for ohmic metal deposition. Electron deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallization, respectively. An interface trap density of low-to-mid-1011 eV-1 cm-2 was obtained from temperature conductance-voltage measurements. Terman method was also used to estimate the interface trap density, and a slightly lower number was obtained as compared to the conductance method. Results from elevated temperature (up to 300°C) conductance measurements showed an interface state density roughly three times higher (6 × 1011 eV-1 cm-2) than at 25°C.
| Original language | English |
|---|---|
| Journal | Journal of the Electrochemical Society |
| Volume | 149 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2002 Aug 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrochemistry
- Surfaces, Coatings and Films
- Surfaces and Interfaces
Cite this
Electrical characterization of GaN metal oxide semiconductor diodes using MgO as the gate oxide. / Kim, Ji Hyun; Gila, B.; Mehandru, R.; Johnson, J. W.; Shin, J. H.; Lee, K. P.; Luo, B.; Onstine, A.; Abernathy, C. R.; Pearton, S. J.; Ren, F.
In: Journal of the Electrochemical Society, Vol. 149, No. 8, 01.08.2002.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electrical characterization of GaN metal oxide semiconductor diodes using MgO as the gate oxide
AU - Kim, Ji Hyun
AU - Gila, B.
AU - Mehandru, R.
AU - Johnson, J. W.
AU - Shin, J. H.
AU - Lee, K. P.
AU - Luo, B.
AU - Onstine, A.
AU - Abernathy, C. R.
AU - Pearton, S. J.
AU - Ren, F.
PY - 2002/8/1
Y1 - 2002/8/1
N2 - GaN metal oxide semiconductor diodes were demonstrated utilizing MgO as the gate oxide. MgO was grown at 100°C on metal oxide chemical vapor deposition grown n-GaN in a molecular beam epitaxy system using a Mg elemental source and an electron cyclotron resonance oxygen plasma. H3PO4-based wet-chemical etcant was used to remove MgO to expose the underlying n-GaN for ohmic metal deposition. Electron deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallization, respectively. An interface trap density of low-to-mid-1011 eV-1 cm-2 was obtained from temperature conductance-voltage measurements. Terman method was also used to estimate the interface trap density, and a slightly lower number was obtained as compared to the conductance method. Results from elevated temperature (up to 300°C) conductance measurements showed an interface state density roughly three times higher (6 × 1011 eV-1 cm-2) than at 25°C.
AB - GaN metal oxide semiconductor diodes were demonstrated utilizing MgO as the gate oxide. MgO was grown at 100°C on metal oxide chemical vapor deposition grown n-GaN in a molecular beam epitaxy system using a Mg elemental source and an electron cyclotron resonance oxygen plasma. H3PO4-based wet-chemical etcant was used to remove MgO to expose the underlying n-GaN for ohmic metal deposition. Electron deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallization, respectively. An interface trap density of low-to-mid-1011 eV-1 cm-2 was obtained from temperature conductance-voltage measurements. Terman method was also used to estimate the interface trap density, and a slightly lower number was obtained as compared to the conductance method. Results from elevated temperature (up to 300°C) conductance measurements showed an interface state density roughly three times higher (6 × 1011 eV-1 cm-2) than at 25°C.
UR - http://www.scopus.com/inward/record.url?scp=0036687452&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036687452&partnerID=8YFLogxK
U2 - 10.1149/1.1489689
DO - 10.1149/1.1489689
M3 - Article
AN - SCOPUS:0036687452
VL - 149
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
SN - 0013-4651
IS - 8
ER -