GaN metal oxide semiconductor diodes were demonstrated utilizing MgO as the gate oxide. MgO was grown at 100°C on metal oxide chemical vapor deposition grown n-GaN in a molecular beam epitaxy system using a Mg elemental source and an electron cyclotron resonance oxygen plasma. H3PO4-based wet-chemical etcant was used to remove MgO to expose the underlying n-GaN for ohmic metal deposition. Electron deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallization, respectively. An interface trap density of low-to-mid-1011 eV-1 cm-2 was obtained from temperature conductance-voltage measurements. Terman method was also used to estimate the interface trap density, and a slightly lower number was obtained as compared to the conductance method. Results from elevated temperature (up to 300°C) conductance measurements showed an interface state density roughly three times higher (6 × 1011 eV-1 cm-2) than at 25°C.
|Journal||Journal of the Electrochemical Society|
|Publication status||Published - 2002 Aug|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry