Electrical characterization of GaN metal oxide semiconductor diodes using MgO as the gate oxide

Ji Hyun Kim, B. Gila, R. Mehandru, J. W. Johnson, J. H. Shin, K. P. Lee, B. Luo, A. Onstine, C. R. Abernathy, S. J. Pearton, F. Ren

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Abstract

GaN metal oxide semiconductor diodes were demonstrated utilizing MgO as the gate oxide. MgO was grown at 100°C on metal oxide chemical vapor deposition grown n-GaN in a molecular beam epitaxy system using a Mg elemental source and an electron cyclotron resonance oxygen plasma. H3PO4-based wet-chemical etcant was used to remove MgO to expose the underlying n-GaN for ohmic metal deposition. Electron deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallization, respectively. An interface trap density of low-to-mid-1011 eV-1 cm-2 was obtained from temperature conductance-voltage measurements. Terman method was also used to estimate the interface trap density, and a slightly lower number was obtained as compared to the conductance method. Results from elevated temperature (up to 300°C) conductance measurements showed an interface state density roughly three times higher (6 × 1011 eV-1 cm-2) than at 25°C.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume149
Issue number8
DOIs
Publication statusPublished - 2002 Aug 1
Externally publishedYes

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ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Kim, J. H., Gila, B., Mehandru, R., Johnson, J. W., Shin, J. H., Lee, K. P., Luo, B., Onstine, A., Abernathy, C. R., Pearton, S. J., & Ren, F. (2002). Electrical characterization of GaN metal oxide semiconductor diodes using MgO as the gate oxide. Journal of the Electrochemical Society, 149(8). https://doi.org/10.1149/1.1489689