Electrical characterization of GaN metal oxide semiconductor diodes using MgO as the gate oxide

J. Kim, B. Gila, R. Mehandru, J. W. Johnson, J. H. Shin, K. P. Lee, B. Luo, A. Onstine, C. R. Abernathy, S. J. Pearton, F. Ren

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66 Citations (Scopus)


GaN metal oxide semiconductor diodes were demonstrated utilizing MgO as the gate oxide. MgO was grown at 100°C on metal oxide chemical vapor deposition grown n-GaN in a molecular beam epitaxy system using a Mg elemental source and an electron cyclotron resonance oxygen plasma. H3PO4-based wet-chemical etcant was used to remove MgO to expose the underlying n-GaN for ohmic metal deposition. Electron deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallization, respectively. An interface trap density of low-to-mid-1011 eV-1 cm-2 was obtained from temperature conductance-voltage measurements. Terman method was also used to estimate the interface trap density, and a slightly lower number was obtained as compared to the conductance method. Results from elevated temperature (up to 300°C) conductance measurements showed an interface state density roughly three times higher (6 × 1011 eV-1 cm-2) than at 25°C.

Original languageEnglish
Pages (from-to)G482-G484
JournalJournal of the Electrochemical Society
Issue number8
Publication statusPublished - 2002 Aug
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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