Electrical characterization of GaN metal oxide semiconductor diodes using MgO as the gate oxide

Ji Hyun Kim, B. P. Gila, R. Mehandru, J. W. Johnson, J. H. Shin, K. P. Lee, B. Luo, A. Onstine, C. R. Abernathy, S. J. Pearton, F. Ren

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

GaN metal oxide semiconductor diodes were demonstrated utilizing MgO as the gate oxide. MgO was grown at 100°C on MOCVD grown n-GaN in a molecular beam epitaxy system using a Mg elemental source and an electron cyclotron resonance oxygen plasma. H 3PO 4 based wet-chemical etchant was used to remove MgO to expose the underlying n-GaN for ohmic metal deposition. Electron deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallization, respectively. An interface trap density of low-to-mid 10 11 eV -1cm -2 was obtained from temperature conductance-voltage measurements. Terman method was also used to estimate the interface trap density and a slight lower number was obtained as compared to the conductance method. Results from elevated temperature (up to 300°C) conductance measurements showed an interface state density roughly three times higher(6×10 11 eV -1 cm -2) than at 25°C.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsJ.E. Northrup, J. Neugebauer, D.C. Look, S.F. Chichibu, H. Riechert
Pages699-712
Number of pages14
Volume693
Publication statusPublished - 2002
Externally publishedYes
EventGaN and Related Alloys-2001 - Boston, MA, United States
Duration: 2001 Nov 262001 Nov 30

Other

OtherGaN and Related Alloys-2001
CountryUnited States
CityBoston, MA
Period01/11/2601/11/30

Fingerprint

Semiconductor diodes
Oxides
Metals
Electron cyclotron resonance
Interface states
Voltage measurement
Metallorganic chemical vapor deposition
Metallizing
Molecular beam epitaxy
Oxygen
Plasmas
Temperature
Electrons
Oxide semiconductors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Kim, J. H., Gila, B. P., Mehandru, R., Johnson, J. W., Shin, J. H., Lee, K. P., ... Ren, F. (2002). Electrical characterization of GaN metal oxide semiconductor diodes using MgO as the gate oxide. In J. E. Northrup, J. Neugebauer, D. C. Look, S. F. Chichibu, & H. Riechert (Eds.), Materials Research Society Symposium - Proceedings (Vol. 693, pp. 699-712)

Electrical characterization of GaN metal oxide semiconductor diodes using MgO as the gate oxide. / Kim, Ji Hyun; Gila, B. P.; Mehandru, R.; Johnson, J. W.; Shin, J. H.; Lee, K. P.; Luo, B.; Onstine, A.; Abernathy, C. R.; Pearton, S. J.; Ren, F.

Materials Research Society Symposium - Proceedings. ed. / J.E. Northrup; J. Neugebauer; D.C. Look; S.F. Chichibu; H. Riechert. Vol. 693 2002. p. 699-712.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kim, JH, Gila, BP, Mehandru, R, Johnson, JW, Shin, JH, Lee, KP, Luo, B, Onstine, A, Abernathy, CR, Pearton, SJ & Ren, F 2002, Electrical characterization of GaN metal oxide semiconductor diodes using MgO as the gate oxide. in JE Northrup, J Neugebauer, DC Look, SF Chichibu & H Riechert (eds), Materials Research Society Symposium - Proceedings. vol. 693, pp. 699-712, GaN and Related Alloys-2001, Boston, MA, United States, 01/11/26.
Kim JH, Gila BP, Mehandru R, Johnson JW, Shin JH, Lee KP et al. Electrical characterization of GaN metal oxide semiconductor diodes using MgO as the gate oxide. In Northrup JE, Neugebauer J, Look DC, Chichibu SF, Riechert H, editors, Materials Research Society Symposium - Proceedings. Vol. 693. 2002. p. 699-712
Kim, Ji Hyun ; Gila, B. P. ; Mehandru, R. ; Johnson, J. W. ; Shin, J. H. ; Lee, K. P. ; Luo, B. ; Onstine, A. ; Abernathy, C. R. ; Pearton, S. J. ; Ren, F. / Electrical characterization of GaN metal oxide semiconductor diodes using MgO as the gate oxide. Materials Research Society Symposium - Proceedings. editor / J.E. Northrup ; J. Neugebauer ; D.C. Look ; S.F. Chichibu ; H. Riechert. Vol. 693 2002. pp. 699-712
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AU - Kim, Ji Hyun

AU - Gila, B. P.

AU - Mehandru, R.

AU - Johnson, J. W.

AU - Shin, J. H.

AU - Lee, K. P.

AU - Luo, B.

AU - Onstine, A.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Ren, F.

PY - 2002

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N2 - GaN metal oxide semiconductor diodes were demonstrated utilizing MgO as the gate oxide. MgO was grown at 100°C on MOCVD grown n-GaN in a molecular beam epitaxy system using a Mg elemental source and an electron cyclotron resonance oxygen plasma. H 3PO 4 based wet-chemical etchant was used to remove MgO to expose the underlying n-GaN for ohmic metal deposition. Electron deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallization, respectively. An interface trap density of low-to-mid 10 11 eV -1cm -2 was obtained from temperature conductance-voltage measurements. Terman method was also used to estimate the interface trap density and a slight lower number was obtained as compared to the conductance method. Results from elevated temperature (up to 300°C) conductance measurements showed an interface state density roughly three times higher(6×10 11 eV -1 cm -2) than at 25°C.

AB - GaN metal oxide semiconductor diodes were demonstrated utilizing MgO as the gate oxide. MgO was grown at 100°C on MOCVD grown n-GaN in a molecular beam epitaxy system using a Mg elemental source and an electron cyclotron resonance oxygen plasma. H 3PO 4 based wet-chemical etchant was used to remove MgO to expose the underlying n-GaN for ohmic metal deposition. Electron deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallization, respectively. An interface trap density of low-to-mid 10 11 eV -1cm -2 was obtained from temperature conductance-voltage measurements. Terman method was also used to estimate the interface trap density and a slight lower number was obtained as compared to the conductance method. Results from elevated temperature (up to 300°C) conductance measurements showed an interface state density roughly three times higher(6×10 11 eV -1 cm -2) than at 25°C.

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