Electrical characterization of GaN metal oxide semiconductor diodes using MgO as the gate oxide

J. Kim, B. P. Gila, R. Mehandru, J. W. Johnson, J. H. Shin, K. P. Lee, B. Luo, A. Onstine, C. R. Abernathy, S. J. Pearton, F. Ren

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

GaN metal oxide semiconductor diodes were demonstrated utilizing MgO as the gate oxide. MgO was grown at 100°C on MOCVD grown n-GaN in a molecular beam epitaxy system using a Mg elemental source and an electron cyclotron resonance oxygen plasma. H3PO4 based wet-chemical etchant was used to remove MgO to expose the underlying n-GaN for ohmic metal deposition. Electron deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallization, respectively. An interface trap density of low-to-mid 1011 eV-1cm-2 was obtained from temperature conductance-voltage measurements. Terman method was also used to estimate the interface trap density and a slight lower number was obtained as compared to the conductance method. Results from elevated temperature (up to 300°C) conductance measurements showed an interface state density roughly three times higher(6×1011 eV-1 cm-2) than at 25°C.

Original languageEnglish
Pages (from-to)699-712
Number of pages14
JournalMaterials Research Society Symposium - Proceedings
Volume693
Publication statusPublished - 2002
Externally publishedYes
EventGaN and Related Alloys-2001 - Boston, MA, United States
Duration: 2001 Nov 262001 Nov 30

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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