Electrical characterization of Ge-Sb-Te phase change nano-pillars using conductive atomic force microscopy

Byeong Ju Bae, Sung Hoon Hong, Seon Yong Hwang, Jae Yeon Hwang, Ki Yeon Yang, Heon Lee

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The electrical characteristic of phase change material was studied in nano-scale using nanoimprint lithography and a conducting atomic force microscopy measurement system. Nanoimprint lithography was used to fabricate the nano-scale phase change material pattern. A Pt-coated AFM tip was used as a top electrode to measure the electrical characteristics of the GST nano-pillar. The GST nano-pillar, which is 200 nm in diameter, was amorphized by 2 V and 5 ns reset pulse and was then brought back to the crystalline phase by applying 1.3 V and 150 ns set pulse. Using this measurement system, the GST nano-pillar was switched between the amorphous and crystalline phases more than five times. The results of the reset and the set current measurement with the GST nano-pillar sizes show that the reset and the set currents also decreased with the decrease of the GST pillar size.

Original languageEnglish
Article number075016
JournalSemiconductor Science and Technology
Volume24
Issue number7
DOIs
Publication statusPublished - 2009 Aug 24

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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