Electrical characterization of semiconducting oxide nanowire and its application to a chemical sensor

Jonghyurk Park, S. E. Moon, Eun Kyung Kim, H. Y. Lee, K. H. Park, Gyu-Tae Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Semiconducting oxide nanowire devices were fabricated using more convenient way to combine photolithography and e-beam lithography, and their electrical properties were studied. To realize the reliable device operation which is a key factor for a chemical sensor, the contact resistance should be optimized. Here, we studied the contact resistance problem under post-deposition annealing or etching process using scanning probe microscopic tool to analyze IV spectroscopic and surface potential behaviors. And, its performance as a chemical sensor was also studied for several gas species. copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationECS Transactions
Pages231-237
Number of pages7
Volume3
Edition10
DOIs
Publication statusPublished - 2006
EventChemical Sensors 7 -and- MEMS/NEMS 7 - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: 2006 Oct 292006 Nov 3

Other

OtherChemical Sensors 7 -and- MEMS/NEMS 7 - 210th Electrochemical Society Meeting
CountryMexico
CityCancun
Period06/10/2906/11/3

Fingerprint

Contact resistance
Chemical sensors
Nanowires
Oxides
Surface potential
Photolithography
Lithography
Etching
Electric properties
Annealing
Scanning
Gases

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Park, J., Moon, S. E., Kim, E. K., Lee, H. Y., Park, K. H., & Kim, G-T. (2006). Electrical characterization of semiconducting oxide nanowire and its application to a chemical sensor. In ECS Transactions (10 ed., Vol. 3, pp. 231-237) https://doi.org/10.1149/1.2357263

Electrical characterization of semiconducting oxide nanowire and its application to a chemical sensor. / Park, Jonghyurk; Moon, S. E.; Kim, Eun Kyung; Lee, H. Y.; Park, K. H.; Kim, Gyu-Tae.

ECS Transactions. Vol. 3 10. ed. 2006. p. 231-237.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Park, J, Moon, SE, Kim, EK, Lee, HY, Park, KH & Kim, G-T 2006, Electrical characterization of semiconducting oxide nanowire and its application to a chemical sensor. in ECS Transactions. 10 edn, vol. 3, pp. 231-237, Chemical Sensors 7 -and- MEMS/NEMS 7 - 210th Electrochemical Society Meeting, Cancun, Mexico, 06/10/29. https://doi.org/10.1149/1.2357263
Park J, Moon SE, Kim EK, Lee HY, Park KH, Kim G-T. Electrical characterization of semiconducting oxide nanowire and its application to a chemical sensor. In ECS Transactions. 10 ed. Vol. 3. 2006. p. 231-237 https://doi.org/10.1149/1.2357263
Park, Jonghyurk ; Moon, S. E. ; Kim, Eun Kyung ; Lee, H. Y. ; Park, K. H. ; Kim, Gyu-Tae. / Electrical characterization of semiconducting oxide nanowire and its application to a chemical sensor. ECS Transactions. Vol. 3 10. ed. 2006. pp. 231-237
@inproceedings{b3369a5d5b3f4f1d9861d4f2e302c9d5,
title = "Electrical characterization of semiconducting oxide nanowire and its application to a chemical sensor",
abstract = "Semiconducting oxide nanowire devices were fabricated using more convenient way to combine photolithography and e-beam lithography, and their electrical properties were studied. To realize the reliable device operation which is a key factor for a chemical sensor, the contact resistance should be optimized. Here, we studied the contact resistance problem under post-deposition annealing or etching process using scanning probe microscopic tool to analyze IV spectroscopic and surface potential behaviors. And, its performance as a chemical sensor was also studied for several gas species. copyright The Electrochemical Society.",
author = "Jonghyurk Park and Moon, {S. E.} and Kim, {Eun Kyung} and Lee, {H. Y.} and Park, {K. H.} and Gyu-Tae Kim",
year = "2006",
doi = "10.1149/1.2357263",
language = "English",
volume = "3",
pages = "231--237",
booktitle = "ECS Transactions",
edition = "10",

}

TY - GEN

T1 - Electrical characterization of semiconducting oxide nanowire and its application to a chemical sensor

AU - Park, Jonghyurk

AU - Moon, S. E.

AU - Kim, Eun Kyung

AU - Lee, H. Y.

AU - Park, K. H.

AU - Kim, Gyu-Tae

PY - 2006

Y1 - 2006

N2 - Semiconducting oxide nanowire devices were fabricated using more convenient way to combine photolithography and e-beam lithography, and their electrical properties were studied. To realize the reliable device operation which is a key factor for a chemical sensor, the contact resistance should be optimized. Here, we studied the contact resistance problem under post-deposition annealing or etching process using scanning probe microscopic tool to analyze IV spectroscopic and surface potential behaviors. And, its performance as a chemical sensor was also studied for several gas species. copyright The Electrochemical Society.

AB - Semiconducting oxide nanowire devices were fabricated using more convenient way to combine photolithography and e-beam lithography, and their electrical properties were studied. To realize the reliable device operation which is a key factor for a chemical sensor, the contact resistance should be optimized. Here, we studied the contact resistance problem under post-deposition annealing or etching process using scanning probe microscopic tool to analyze IV spectroscopic and surface potential behaviors. And, its performance as a chemical sensor was also studied for several gas species. copyright The Electrochemical Society.

UR - http://www.scopus.com/inward/record.url?scp=33847043145&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847043145&partnerID=8YFLogxK

U2 - 10.1149/1.2357263

DO - 10.1149/1.2357263

M3 - Conference contribution

AN - SCOPUS:33847043145

VL - 3

SP - 231

EP - 237

BT - ECS Transactions

ER -