Abstract
Semiconducting oxide nanowire devices were fabricated using more convenient way to combine photolithography and e-beam lithography, and their electrical properties were studied. To realize the reliable device operation which is a key factor for a chemical sensor, the contact resistance should be optimized. Here, we studied the contact resistance problem under post-deposition annealing or etching process using scanning probe microscopic tool to analyze IV spectroscopic and surface potential behaviors. And, its performance as a chemical sensor was also studied for several gas species. copyright The Electrochemical Society.
Original language | English |
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Pages (from-to) | 231-237 |
Number of pages | 7 |
Journal | ECS Transactions |
Volume | 3 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2006 |
Event | Chemical Sensors 7 -and- MEMS/NEMS 7 - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: 2006 Oct 29 → 2006 Nov 3 |
ASJC Scopus subject areas
- Engineering(all)