@inproceedings{b3369a5d5b3f4f1d9861d4f2e302c9d5,
title = "Electrical characterization of semiconducting oxide nanowire and its application to a chemical sensor",
abstract = "Semiconducting oxide nanowire devices were fabricated using more convenient way to combine photolithography and e-beam lithography, and their electrical properties were studied. To realize the reliable device operation which is a key factor for a chemical sensor, the contact resistance should be optimized. Here, we studied the contact resistance problem under post-deposition annealing or etching process using scanning probe microscopic tool to analyze IV spectroscopic and surface potential behaviors. And, its performance as a chemical sensor was also studied for several gas species. copyright The Electrochemical Society.",
author = "Jonghyurk Park and Moon, {S. E.} and Kim, {Eun Kyung} and Lee, {H. Y.} and Park, {K. H.} and Kim, {G. T.}",
year = "2006",
doi = "10.1149/1.2357263",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "10",
pages = "231--237",
booktitle = "Chemical Sensors 7 -and- MEMS/NEMS 7",
edition = "10",
note = "Chemical Sensors 7 -and- MEMS/NEMS 7 - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",
}