Abstract
Semiconducting oxide nanowire devices were fabricated using more convenient way to combine photolithography and e-beam lithography, and their electrical properties were studied. To realize the reliable device operation which is a key factor for a chemical sensor, the contact resistance should be optimized. Here, we studied the contact resistance problem under post-deposition annealing or etching process using scanning probe microscopic tool to analyze IV spectroscopic and surface potential behaviors. And, its performance as a chemical sensor was also studied for several gas species. copyright The Electrochemical Society.
| Original language | English |
|---|---|
| Title of host publication | ECS Transactions |
| Pages | 231-237 |
| Number of pages | 7 |
| Volume | 3 |
| Edition | 10 |
| DOIs | |
| Publication status | Published - 2006 |
| Event | Chemical Sensors 7 -and- MEMS/NEMS 7 - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: 2006 Oct 29 → 2006 Nov 3 |
Other
| Other | Chemical Sensors 7 -and- MEMS/NEMS 7 - 210th Electrochemical Society Meeting |
|---|---|
| Country | Mexico |
| City | Cancun |
| Period | 06/10/29 → 06/11/3 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Electrical characterization of semiconducting oxide nanowire and its application to a chemical sensor. / Park, Jonghyurk; Moon, S. E.; Kim, Eun Kyung; Lee, H. Y.; Park, K. H.; Kim, Gyu-Tae.
ECS Transactions. Vol. 3 10. ed. 2006. p. 231-237.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Electrical characterization of semiconducting oxide nanowire and its application to a chemical sensor
AU - Park, Jonghyurk
AU - Moon, S. E.
AU - Kim, Eun Kyung
AU - Lee, H. Y.
AU - Park, K. H.
AU - Kim, Gyu-Tae
PY - 2006
Y1 - 2006
N2 - Semiconducting oxide nanowire devices were fabricated using more convenient way to combine photolithography and e-beam lithography, and their electrical properties were studied. To realize the reliable device operation which is a key factor for a chemical sensor, the contact resistance should be optimized. Here, we studied the contact resistance problem under post-deposition annealing or etching process using scanning probe microscopic tool to analyze IV spectroscopic and surface potential behaviors. And, its performance as a chemical sensor was also studied for several gas species. copyright The Electrochemical Society.
AB - Semiconducting oxide nanowire devices were fabricated using more convenient way to combine photolithography and e-beam lithography, and their electrical properties were studied. To realize the reliable device operation which is a key factor for a chemical sensor, the contact resistance should be optimized. Here, we studied the contact resistance problem under post-deposition annealing or etching process using scanning probe microscopic tool to analyze IV spectroscopic and surface potential behaviors. And, its performance as a chemical sensor was also studied for several gas species. copyright The Electrochemical Society.
UR - http://www.scopus.com/inward/record.url?scp=33847043145&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33847043145&partnerID=8YFLogxK
U2 - 10.1149/1.2357263
DO - 10.1149/1.2357263
M3 - Conference contribution
AN - SCOPUS:33847043145
VL - 3
SP - 231
EP - 237
BT - ECS Transactions
ER -