Electrical characterization of semiconducting oxide nanowire and its application to a chemical sensor

Jonghyurk Park; S. E. Moon; Eun Kyung Kim; H. Y. Lee; K. H. Park; G. T. Kim

doi:10.1149/1.2357263

Electrical characterization of semiconducting oxide nanowire and its application to a chemical sensor

Jonghyurk Park, S. E. Moon, Eun Kyung Kim, H. Y. Lee, K. H. Park, G. T. Kim

Research output: Contribution to journal › Conference article › peer-review

Abstract

Semiconducting oxide nanowire devices were fabricated using more convenient way to combine photolithography and e-beam lithography, and their electrical properties were studied. To realize the reliable device operation which is a key factor for a chemical sensor, the contact resistance should be optimized. Here, we studied the contact resistance problem under post-deposition annealing or etching process using scanning probe microscopic tool to analyze IV spectroscopic and surface potential behaviors. And, its performance as a chemical sensor was also studied for several gas species. copyright The Electrochemical Society.

Original language	English
Pages (from-to)	231-237
Number of pages	7
Journal	ECS Transactions
Volume	3
Issue number	10
DOIs	https://doi.org/10.1149/1.2357263
Publication status	Published - 2006
Event	Chemical Sensors 7 -and- MEMS/NEMS 7 - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: 2006 Oct 29 → 2006 Nov 3

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Engineering(all)

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title = "Electrical characterization of semiconducting oxide nanowire and its application to a chemical sensor",

abstract = "Semiconducting oxide nanowire devices were fabricated using more convenient way to combine photolithography and e-beam lithography, and their electrical properties were studied. To realize the reliable device operation which is a key factor for a chemical sensor, the contact resistance should be optimized. Here, we studied the contact resistance problem under post-deposition annealing or etching process using scanning probe microscopic tool to analyze IV spectroscopic and surface potential behaviors. And, its performance as a chemical sensor was also studied for several gas species. copyright The Electrochemical Society.",

author = "Jonghyurk Park and Moon, {S. E.} and Kim, {Eun Kyung} and Lee, {H. Y.} and Park, {K. H.} and Kim, {G. T.}",

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AU - Park, Jonghyurk

AU - Moon, S. E.

AU - Kim, Eun Kyung

AU - Lee, H. Y.

AU - Park, K. H.

AU - Kim, G. T.

PY - 2006

Y1 - 2006

N2 - Semiconducting oxide nanowire devices were fabricated using more convenient way to combine photolithography and e-beam lithography, and their electrical properties were studied. To realize the reliable device operation which is a key factor for a chemical sensor, the contact resistance should be optimized. Here, we studied the contact resistance problem under post-deposition annealing or etching process using scanning probe microscopic tool to analyze IV spectroscopic and surface potential behaviors. And, its performance as a chemical sensor was also studied for several gas species. copyright The Electrochemical Society.

AB - Semiconducting oxide nanowire devices were fabricated using more convenient way to combine photolithography and e-beam lithography, and their electrical properties were studied. To realize the reliable device operation which is a key factor for a chemical sensor, the contact resistance should be optimized. Here, we studied the contact resistance problem under post-deposition annealing or etching process using scanning probe microscopic tool to analyze IV spectroscopic and surface potential behaviors. And, its performance as a chemical sensor was also studied for several gas species. copyright The Electrochemical Society.

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T2 - Chemical Sensors 7 -and- MEMS/NEMS 7 - 210th Electrochemical Society Meeting

Y2 - 29 October 2006 through 3 November 2006

ER -

Electrical characterization of semiconducting oxide nanowire and its application to a chemical sensor

Abstract

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