Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors

Hong Yeol Kim; Jihyun Kim; Lu Liu; Chien Fong Lo; Fan Ren; Stephen J. Pearton

doi:10.1116/1.4820129

Electrical characterization of ⁶⁰Co gamma radiation-exposed InAlN/GaN high electron mobility transistors

Hong Yeol Kim, Jihyun Kim, Lu Liu, Chien Fong Lo, Fan Ren, Stephen J. Pearton

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

In_0.17Al_0.83N/GaN high electron mobility transistors (HEMTs) were cumulatively subjected to ⁶⁰Co gamma-ray irradiation doses up to 500 Mrad. Source-drain current-voltage characteristics (I _DS-V_DS) showed little change after lower dose gamma-ray irradiations (<200 Mrad). However, the electrical properties were significantly degraded after 500 Mrad irradiations, indicating that the radiation-induced damage near the active region of the devices was severe. The saturation current level at V_GS = 0 V was degraded by 48% after 500 Mrad irradiation. The effective carrier removal rate was not linear with dose, but was 0.54 × 10¹⁰ cm^-2 Mrad^-1 in the range from 200 to 500 Mrad. The cumulative gamma-ray irradiation of In _0.17Al_0.83N/GaN HEMTs caused much larger reductions in drain-source current compared to AlGaN/GaN devices exposed under the same conditions.

Original language	English
Article number	051210
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	31
Issue number	5
DOIs	https://doi.org/10.1116/1.4820129
Publication status	Published - 2013 Sept

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1116/1.4820129

Cite this

@article{343d7e54b2464bd0b9dc5a7cf79fc76c,

title = "Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors",

abstract = "In0.17Al0.83N/GaN high electron mobility transistors (HEMTs) were cumulatively subjected to 60Co gamma-ray irradiation doses up to 500 Mrad. Source-drain current-voltage characteristics (I DS-VDS) showed little change after lower dose gamma-ray irradiations (<200 Mrad). However, the electrical properties were significantly degraded after 500 Mrad irradiations, indicating that the radiation-induced damage near the active region of the devices was severe. The saturation current level at VGS = 0 V was degraded by 48% after 500 Mrad irradiation. The effective carrier removal rate was not linear with dose, but was 0.54 × 1010 cm-2 Mrad-1 in the range from 200 to 500 Mrad. The cumulative gamma-ray irradiation of In 0.17Al0.83N/GaN HEMTs caused much larger reductions in drain-source current compared to AlGaN/GaN devices exposed under the same conditions.",

author = "Kim, {Hong Yeol} and Jihyun Kim and Lu Liu and Lo, {Chien Fong} and Fan Ren and Pearton, {Stephen J.}",

note = "Funding Information: The research at Korea University was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (Grant No. 2012R1A1A2042761) and the Human Resources Development program (Grant No. 20124030200120) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Trade, Industry, and Energy. The work at University of Florida was supported by HDTRA (James Reed) under contract U.S. DOD HDTRA Grant No. 1-11-1-0020. ",

year = "2013",

month = sep,

doi = "10.1116/1.4820129",

language = "English",

volume = "31",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "5",

}

TY - JOUR

T1 - Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors

AU - Kim, Hong Yeol

AU - Kim, Jihyun

AU - Liu, Lu

AU - Lo, Chien Fong

AU - Ren, Fan

AU - Pearton, Stephen J.

N1 - Funding Information: The research at Korea University was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (Grant No. 2012R1A1A2042761) and the Human Resources Development program (Grant No. 20124030200120) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Trade, Industry, and Energy. The work at University of Florida was supported by HDTRA (James Reed) under contract U.S. DOD HDTRA Grant No. 1-11-1-0020.

PY - 2013/9

Y1 - 2013/9

N2 - In0.17Al0.83N/GaN high electron mobility transistors (HEMTs) were cumulatively subjected to 60Co gamma-ray irradiation doses up to 500 Mrad. Source-drain current-voltage characteristics (I DS-VDS) showed little change after lower dose gamma-ray irradiations (<200 Mrad). However, the electrical properties were significantly degraded after 500 Mrad irradiations, indicating that the radiation-induced damage near the active region of the devices was severe. The saturation current level at VGS = 0 V was degraded by 48% after 500 Mrad irradiation. The effective carrier removal rate was not linear with dose, but was 0.54 × 1010 cm-2 Mrad-1 in the range from 200 to 500 Mrad. The cumulative gamma-ray irradiation of In 0.17Al0.83N/GaN HEMTs caused much larger reductions in drain-source current compared to AlGaN/GaN devices exposed under the same conditions.

AB - In0.17Al0.83N/GaN high electron mobility transistors (HEMTs) were cumulatively subjected to 60Co gamma-ray irradiation doses up to 500 Mrad. Source-drain current-voltage characteristics (I DS-VDS) showed little change after lower dose gamma-ray irradiations (<200 Mrad). However, the electrical properties were significantly degraded after 500 Mrad irradiations, indicating that the radiation-induced damage near the active region of the devices was severe. The saturation current level at VGS = 0 V was degraded by 48% after 500 Mrad irradiation. The effective carrier removal rate was not linear with dose, but was 0.54 × 1010 cm-2 Mrad-1 in the range from 200 to 500 Mrad. The cumulative gamma-ray irradiation of In 0.17Al0.83N/GaN HEMTs caused much larger reductions in drain-source current compared to AlGaN/GaN devices exposed under the same conditions.

UR - http://www.scopus.com/inward/record.url?scp=84884915422&partnerID=8YFLogxK

U2 - 10.1116/1.4820129

DO - 10.1116/1.4820129

M3 - Article

AN - SCOPUS:84884915422

SN - 1071-1023

VL - 31

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 5

M1 - 051210

ER -

Electrical characterization of ⁶⁰Co gamma radiation-exposed InAlN/GaN high electron mobility transistors

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this