Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors

Hong Yeol Kim, Ji Hyun Kim, Lu Liu, Chien Fong Lo, Fan Ren, Stephen J. Pearton

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In0.17Al0.83N/GaN high electron mobility transistors (HEMTs) were cumulatively subjected to 60Co gamma-ray irradiation doses up to 500 Mrad. Source-drain current-voltage characteristics (I DS-VDS) showed little change after lower dose gamma-ray irradiations (<200 Mrad). However, the electrical properties were significantly degraded after 500 Mrad irradiations, indicating that the radiation-induced damage near the active region of the devices was severe. The saturation current level at VGS = 0 V was degraded by 48% after 500 Mrad irradiation. The effective carrier removal rate was not linear with dose, but was 0.54 × 1010 cm-2 Mrad-1 in the range from 200 to 500 Mrad. The cumulative gamma-ray irradiation of In 0.17Al0.83N/GaN HEMTs caused much larger reductions in drain-source current compared to AlGaN/GaN devices exposed under the same conditions.

Original languageEnglish
Article number051210
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume31
Issue number5
DOIs
Publication statusPublished - 2013 Sep 1

Fingerprint

High electron mobility transistors
high electron mobility transistors
Gamma rays
Irradiation
gamma rays
irradiation
dosage
Dosimetry
Drain current
Current voltage characteristics
Electric properties
electrical properties
damage
saturation
Radiation
electric potential
radiation

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors. / Kim, Hong Yeol; Kim, Ji Hyun; Liu, Lu; Lo, Chien Fong; Ren, Fan; Pearton, Stephen J.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 31, No. 5, 051210, 01.09.2013.

Research output: Contribution to journalArticle

@article{343d7e54b2464bd0b9dc5a7cf79fc76c,
title = "Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors",
abstract = "In0.17Al0.83N/GaN high electron mobility transistors (HEMTs) were cumulatively subjected to 60Co gamma-ray irradiation doses up to 500 Mrad. Source-drain current-voltage characteristics (I DS-VDS) showed little change after lower dose gamma-ray irradiations (<200 Mrad). However, the electrical properties were significantly degraded after 500 Mrad irradiations, indicating that the radiation-induced damage near the active region of the devices was severe. The saturation current level at VGS = 0 V was degraded by 48{\%} after 500 Mrad irradiation. The effective carrier removal rate was not linear with dose, but was 0.54 × 1010 cm-2 Mrad-1 in the range from 200 to 500 Mrad. The cumulative gamma-ray irradiation of In 0.17Al0.83N/GaN HEMTs caused much larger reductions in drain-source current compared to AlGaN/GaN devices exposed under the same conditions.",
author = "Kim, {Hong Yeol} and Kim, {Ji Hyun} and Lu Liu and Lo, {Chien Fong} and Fan Ren and Pearton, {Stephen J.}",
year = "2013",
month = "9",
day = "1",
doi = "10.1116/1.4820129",
language = "English",
volume = "31",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "5",

}

TY - JOUR

T1 - Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors

AU - Kim, Hong Yeol

AU - Kim, Ji Hyun

AU - Liu, Lu

AU - Lo, Chien Fong

AU - Ren, Fan

AU - Pearton, Stephen J.

PY - 2013/9/1

Y1 - 2013/9/1

N2 - In0.17Al0.83N/GaN high electron mobility transistors (HEMTs) were cumulatively subjected to 60Co gamma-ray irradiation doses up to 500 Mrad. Source-drain current-voltage characteristics (I DS-VDS) showed little change after lower dose gamma-ray irradiations (<200 Mrad). However, the electrical properties were significantly degraded after 500 Mrad irradiations, indicating that the radiation-induced damage near the active region of the devices was severe. The saturation current level at VGS = 0 V was degraded by 48% after 500 Mrad irradiation. The effective carrier removal rate was not linear with dose, but was 0.54 × 1010 cm-2 Mrad-1 in the range from 200 to 500 Mrad. The cumulative gamma-ray irradiation of In 0.17Al0.83N/GaN HEMTs caused much larger reductions in drain-source current compared to AlGaN/GaN devices exposed under the same conditions.

AB - In0.17Al0.83N/GaN high electron mobility transistors (HEMTs) were cumulatively subjected to 60Co gamma-ray irradiation doses up to 500 Mrad. Source-drain current-voltage characteristics (I DS-VDS) showed little change after lower dose gamma-ray irradiations (<200 Mrad). However, the electrical properties were significantly degraded after 500 Mrad irradiations, indicating that the radiation-induced damage near the active region of the devices was severe. The saturation current level at VGS = 0 V was degraded by 48% after 500 Mrad irradiation. The effective carrier removal rate was not linear with dose, but was 0.54 × 1010 cm-2 Mrad-1 in the range from 200 to 500 Mrad. The cumulative gamma-ray irradiation of In 0.17Al0.83N/GaN HEMTs caused much larger reductions in drain-source current compared to AlGaN/GaN devices exposed under the same conditions.

UR - http://www.scopus.com/inward/record.url?scp=84884915422&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84884915422&partnerID=8YFLogxK

U2 - 10.1116/1.4820129

DO - 10.1116/1.4820129

M3 - Article

VL - 31

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 5

M1 - 051210

ER -