In0.17Al0.83N/GaN high electron mobility transistors (HEMTs) were cumulatively subjected to 60Co gamma-ray irradiation doses up to 500 Mrad. Source-drain current-voltage characteristics (I DS-VDS) showed little change after lower dose gamma-ray irradiations (<200 Mrad). However, the electrical properties were significantly degraded after 500 Mrad irradiations, indicating that the radiation-induced damage near the active region of the devices was severe. The saturation current level at VGS = 0 V was degraded by 48% after 500 Mrad irradiation. The effective carrier removal rate was not linear with dose, but was 0.54 × 1010 cm-2 Mrad-1 in the range from 200 to 500 Mrad. The cumulative gamma-ray irradiation of In 0.17Al0.83N/GaN HEMTs caused much larger reductions in drain-source current compared to AlGaN/GaN devices exposed under the same conditions.
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2013 Sep 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering