Electrical characterization of titanium-based ohmic contacts to 4h-silicon carbide for high-power and high-temperature operation

Sang Kwon Lee, Carl Mikael Zetterling, Mikael Östling, Byung-Moo Moon

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We report on titanium-based ohmic contacts (titanium carbide, titanium tungsten, and titanium) on both highly doped epilayers (n+ and p+) and Al-ion-implanted layers. The TiC contact layer was epitaxially grown on epilayers as well as an Al-ion-implanted layers of 4H-SiC by co-evaporation Ti and C60 under an ultra-high vacuum condition at low temperature (<500 °C). For comparison and long-term stability test, we also deposited TiW (weight ratio 30: 70) ohmic contacts to p- And n-type epilayers of 4H-SiC. The specific contact resistances (ρc) were found to be as low as 5 × 10-6, 2 × 10-5, 2 × 10-5, 3 × 10-4, 4 × 10-5 and 1 × 10-4 Ωcm2 for TiC contacts to n+ epilayers, p+ epilayers, and Al-ion-implanted layers, Ti contacts to p+ epilayers, and TiW contacts to p+ and to n+ epilayers, respectively, by using linear transmission line method (TLM) measurements. During the long-term reliability tests in a vacuum chamber, we found that evaporated Au capping layers helped to keep the contacts from degrading.

Original languageEnglish
Pages (from-to)572-576
Number of pages5
JournalJournal of the Korean Physical Society
Volume40
Issue number4
Publication statusPublished - 2002 Apr 1

Fingerprint

silicon carbides
electric contacts
titanium
stability tests
titanium carbides
ions
vacuum chambers
contact resistance
ultrahigh vacuum
transmission lines
tungsten
evaporation

Keywords

  • 4H-silicon carbide
  • Long-term reliability
  • Ohmic contacts

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Electrical characterization of titanium-based ohmic contacts to 4h-silicon carbide for high-power and high-temperature operation. / Lee, Sang Kwon; Zetterling, Carl Mikael; Östling, Mikael; Moon, Byung-Moo.

In: Journal of the Korean Physical Society, Vol. 40, No. 4, 01.04.2002, p. 572-576.

Research output: Contribution to journalArticle

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AU - Moon, Byung-Moo

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AB - We report on titanium-based ohmic contacts (titanium carbide, titanium tungsten, and titanium) on both highly doped epilayers (n+ and p+) and Al-ion-implanted layers. The TiC contact layer was epitaxially grown on epilayers as well as an Al-ion-implanted layers of 4H-SiC by co-evaporation Ti and C60 under an ultra-high vacuum condition at low temperature (<500 °C). For comparison and long-term stability test, we also deposited TiW (weight ratio 30: 70) ohmic contacts to p- And n-type epilayers of 4H-SiC. The specific contact resistances (ρc) were found to be as low as 5 × 10-6, 2 × 10-5, 2 × 10-5, 3 × 10-4, 4 × 10-5 and 1 × 10-4 Ωcm2 for TiC contacts to n+ epilayers, p+ epilayers, and Al-ion-implanted layers, Ti contacts to p+ epilayers, and TiW contacts to p+ and to n+ epilayers, respectively, by using linear transmission line method (TLM) measurements. During the long-term reliability tests in a vacuum chamber, we found that evaporated Au capping layers helped to keep the contacts from degrading.

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