Electrical characterizations of Neutron-irradiated SiC Schottky diodes

Geunwoo Ko; Hong Yeol Kim; Joona Bang; Jihyun Kim

doi:10.1007/s11814-009-0049-2

Electrical characterizations of Neutron-irradiated SiC Schottky diodes

Geunwoo Ko, Hong Yeol Kim, Joona Bang, Jihyun Kim

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Neutrons with an average energy of 9.8±0.8 MeV were irradiated onto silicon carbide Schottky diodes. After bombardment at a fluency of 2.75×10¹¹ neutron/cm², the Schottky barrier height, ideality factor, and the leakage currents remained unchanged. The electrical properties began to deteriorate after bombardment at a fluency of 5.5×10¹¹ neutron/cm². In this study, we demonstrate that SiC SBD is robust under neutron irradiations and is well suited for space operations up to bombardments at a fluency of 2.75×10¹¹ neutron/cm².

Original language	English
Pages (from-to)	285-287
Number of pages	3
Journal	Korean Journal of Chemical Engineering
Volume	26
Issue number	1
DOIs	https://doi.org/10.1007/s11814-009-0049-2
Publication status	Published - 2009 Jan

Keywords

Diode
Neutron irradiation
Silicon carbide

ASJC Scopus subject areas

Chemistry(all)
Chemical Engineering(all)

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10.1007/s11814-009-0049-2

Cite this

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title = "Electrical characterizations of Neutron-irradiated SiC Schottky diodes",

abstract = "Neutrons with an average energy of 9.8±0.8 MeV were irradiated onto silicon carbide Schottky diodes. After bombardment at a fluency of 2.75×1011 neutron/cm2, the Schottky barrier height, ideality factor, and the leakage currents remained unchanged. The electrical properties began to deteriorate after bombardment at a fluency of 5.5×1011 neutron/cm2. In this study, we demonstrate that SiC SBD is robust under neutron irradiations and is well suited for space operations up to bombardments at a fluency of 2.75×1011 neutron/cm2.",

keywords = "Diode, Neutron irradiation, Silicon carbide",

author = "Geunwoo Ko and Kim, {Hong Yeol} and Joona Bang and Jihyun Kim",

note = "Funding Information: This research was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korean government (MEST). (Grant code: M2AB02) and BK21 program. Also, it was carried out using the MC-50 cyclotron at the Korea Institute of Radiological and Medical sciences (KIRAMS).",

year = "2009",

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doi = "10.1007/s11814-009-0049-2",

language = "English",

volume = "26",

pages = "285--287",

journal = "Korean Journal of Chemical Engineering",

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T1 - Electrical characterizations of Neutron-irradiated SiC Schottky diodes

AU - Ko, Geunwoo

AU - Kim, Hong Yeol

AU - Bang, Joona

AU - Kim, Jihyun

N1 - Funding Information: This research was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korean government (MEST). (Grant code: M2AB02) and BK21 program. Also, it was carried out using the MC-50 cyclotron at the Korea Institute of Radiological and Medical sciences (KIRAMS).

PY - 2009/1

Y1 - 2009/1

N2 - Neutrons with an average energy of 9.8±0.8 MeV were irradiated onto silicon carbide Schottky diodes. After bombardment at a fluency of 2.75×1011 neutron/cm2, the Schottky barrier height, ideality factor, and the leakage currents remained unchanged. The electrical properties began to deteriorate after bombardment at a fluency of 5.5×1011 neutron/cm2. In this study, we demonstrate that SiC SBD is robust under neutron irradiations and is well suited for space operations up to bombardments at a fluency of 2.75×1011 neutron/cm2.

AB - Neutrons with an average energy of 9.8±0.8 MeV were irradiated onto silicon carbide Schottky diodes. After bombardment at a fluency of 2.75×1011 neutron/cm2, the Schottky barrier height, ideality factor, and the leakage currents remained unchanged. The electrical properties began to deteriorate after bombardment at a fluency of 5.5×1011 neutron/cm2. In this study, we demonstrate that SiC SBD is robust under neutron irradiations and is well suited for space operations up to bombardments at a fluency of 2.75×1011 neutron/cm2.

KW - Diode

KW - Neutron irradiation

KW - Silicon carbide

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U2 - 10.1007/s11814-009-0049-2

DO - 10.1007/s11814-009-0049-2

M3 - Article

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VL - 26

SP - 285

EP - 287

JO - Korean Journal of Chemical Engineering

JF - Korean Journal of Chemical Engineering

SN - 0256-1115

IS - 1

ER -

Electrical characterizations of Neutron-irradiated SiC Schottky diodes

Abstract

Keywords

ASJC Scopus subject areas

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