Abstract
Neutrons with an average energy of 9.8±0.8 MeV were irradiated onto silicon carbide Schottky diodes. After bombardment at a fluency of 2.75×1011 neutron/cm2, the Schottky barrier height, ideality factor, and the leakage currents remained unchanged. The electrical properties began to deteriorate after bombardment at a fluency of 5.5×1011 neutron/cm2. In this study, we demonstrate that SiC SBD is robust under neutron irradiations and is well suited for space operations up to bombardments at a fluency of 2.75×1011 neutron/cm2.
| Original language | English |
|---|---|
| Pages (from-to) | 285-287 |
| Number of pages | 3 |
| Journal | Korean Journal of Chemical Engineering |
| Volume | 26 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2009 Jan 1 |
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Keywords
- Diode
- Neutron irradiation
- Silicon carbide
ASJC Scopus subject areas
- Chemistry(all)
- Chemical Engineering(all)
Cite this
Electrical characterizations of Neutron-irradiated SiC Schottky diodes. / Ko, Geunwoo; Kim, Hong Yeol; Bang, Joona; Kim, Ji Hyun.
In: Korean Journal of Chemical Engineering, Vol. 26, No. 1, 01.01.2009, p. 285-287.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electrical characterizations of Neutron-irradiated SiC Schottky diodes
AU - Ko, Geunwoo
AU - Kim, Hong Yeol
AU - Bang, Joona
AU - Kim, Ji Hyun
PY - 2009/1/1
Y1 - 2009/1/1
N2 - Neutrons with an average energy of 9.8±0.8 MeV were irradiated onto silicon carbide Schottky diodes. After bombardment at a fluency of 2.75×1011 neutron/cm2, the Schottky barrier height, ideality factor, and the leakage currents remained unchanged. The electrical properties began to deteriorate after bombardment at a fluency of 5.5×1011 neutron/cm2. In this study, we demonstrate that SiC SBD is robust under neutron irradiations and is well suited for space operations up to bombardments at a fluency of 2.75×1011 neutron/cm2.
AB - Neutrons with an average energy of 9.8±0.8 MeV were irradiated onto silicon carbide Schottky diodes. After bombardment at a fluency of 2.75×1011 neutron/cm2, the Schottky barrier height, ideality factor, and the leakage currents remained unchanged. The electrical properties began to deteriorate after bombardment at a fluency of 5.5×1011 neutron/cm2. In this study, we demonstrate that SiC SBD is robust under neutron irradiations and is well suited for space operations up to bombardments at a fluency of 2.75×1011 neutron/cm2.
KW - Diode
KW - Neutron irradiation
KW - Silicon carbide
UR - http://www.scopus.com/inward/record.url?scp=59349090163&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=59349090163&partnerID=8YFLogxK
U2 - 10.1007/s11814-009-0049-2
DO - 10.1007/s11814-009-0049-2
M3 - Article
AN - SCOPUS:59349090163
VL - 26
SP - 285
EP - 287
JO - Korean Journal of Chemical Engineering
JF - Korean Journal of Chemical Engineering
SN - 0256-1115
IS - 1
ER -