Electrical characterizations of Neutron-irradiated SiC Schottky diodes

Geunwoo Ko, Hong Yeol Kim, Joona Bang, Ji Hyun Kim

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10 Citations (Scopus)


Neutrons with an average energy of 9.8±0.8 MeV were irradiated onto silicon carbide Schottky diodes. After bombardment at a fluency of 2.75×1011 neutron/cm2, the Schottky barrier height, ideality factor, and the leakage currents remained unchanged. The electrical properties began to deteriorate after bombardment at a fluency of 5.5×1011 neutron/cm2. In this study, we demonstrate that SiC SBD is robust under neutron irradiations and is well suited for space operations up to bombardments at a fluency of 2.75×1011 neutron/cm2.

Original languageEnglish
Pages (from-to)285-287
Number of pages3
JournalKorean Journal of Chemical Engineering
Issue number1
Publication statusPublished - 2009 Jan 1



  • Diode
  • Neutron irradiation
  • Silicon carbide

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)

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