Electrical characterizations of Neutron-irradiated SiC Schottky diodes

Geunwoo Ko, Hong Yeol Kim, Joona Bang, Ji Hyun Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Neutrons with an average energy of 9.8±0.8 MeV were irradiated onto silicon carbide Schottky diodes. After bombardment at a fluency of 2.75×1011 neutron/cm2, the Schottky barrier height, ideality factor, and the leakage currents remained unchanged. The electrical properties began to deteriorate after bombardment at a fluency of 5.5×1011 neutron/cm2. In this study, we demonstrate that SiC SBD is robust under neutron irradiations and is well suited for space operations up to bombardments at a fluency of 2.75×1011 neutron/cm2.

Original languageEnglish
Pages (from-to)285-287
Number of pages3
JournalKorean Journal of Chemical Engineering
Volume26
Issue number1
DOIs
Publication statusPublished - 2009 Jan 1

Fingerprint

Neutrons
Diodes
Neutron irradiation
Silicon carbide
Leakage currents
Electric properties

Keywords

  • Diode
  • Neutron irradiation
  • Silicon carbide

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)

Cite this

Electrical characterizations of Neutron-irradiated SiC Schottky diodes. / Ko, Geunwoo; Kim, Hong Yeol; Bang, Joona; Kim, Ji Hyun.

In: Korean Journal of Chemical Engineering, Vol. 26, No. 1, 01.01.2009, p. 285-287.

Research output: Contribution to journalArticle

@article{536ca143abec4d469ec08ff00c379432,
title = "Electrical characterizations of Neutron-irradiated SiC Schottky diodes",
abstract = "Neutrons with an average energy of 9.8±0.8 MeV were irradiated onto silicon carbide Schottky diodes. After bombardment at a fluency of 2.75×1011 neutron/cm2, the Schottky barrier height, ideality factor, and the leakage currents remained unchanged. The electrical properties began to deteriorate after bombardment at a fluency of 5.5×1011 neutron/cm2. In this study, we demonstrate that SiC SBD is robust under neutron irradiations and is well suited for space operations up to bombardments at a fluency of 2.75×1011 neutron/cm2.",
keywords = "Diode, Neutron irradiation, Silicon carbide",
author = "Geunwoo Ko and Kim, {Hong Yeol} and Joona Bang and Kim, {Ji Hyun}",
year = "2009",
month = "1",
day = "1",
doi = "10.1007/s11814-009-0049-2",
language = "English",
volume = "26",
pages = "285--287",
journal = "Korean Journal of Chemical Engineering",
issn = "0256-1115",
publisher = "Springer New York",
number = "1",

}

TY - JOUR

T1 - Electrical characterizations of Neutron-irradiated SiC Schottky diodes

AU - Ko, Geunwoo

AU - Kim, Hong Yeol

AU - Bang, Joona

AU - Kim, Ji Hyun

PY - 2009/1/1

Y1 - 2009/1/1

N2 - Neutrons with an average energy of 9.8±0.8 MeV were irradiated onto silicon carbide Schottky diodes. After bombardment at a fluency of 2.75×1011 neutron/cm2, the Schottky barrier height, ideality factor, and the leakage currents remained unchanged. The electrical properties began to deteriorate after bombardment at a fluency of 5.5×1011 neutron/cm2. In this study, we demonstrate that SiC SBD is robust under neutron irradiations and is well suited for space operations up to bombardments at a fluency of 2.75×1011 neutron/cm2.

AB - Neutrons with an average energy of 9.8±0.8 MeV were irradiated onto silicon carbide Schottky diodes. After bombardment at a fluency of 2.75×1011 neutron/cm2, the Schottky barrier height, ideality factor, and the leakage currents remained unchanged. The electrical properties began to deteriorate after bombardment at a fluency of 5.5×1011 neutron/cm2. In this study, we demonstrate that SiC SBD is robust under neutron irradiations and is well suited for space operations up to bombardments at a fluency of 2.75×1011 neutron/cm2.

KW - Diode

KW - Neutron irradiation

KW - Silicon carbide

UR - http://www.scopus.com/inward/record.url?scp=59349090163&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=59349090163&partnerID=8YFLogxK

U2 - 10.1007/s11814-009-0049-2

DO - 10.1007/s11814-009-0049-2

M3 - Article

AN - SCOPUS:59349090163

VL - 26

SP - 285

EP - 287

JO - Korean Journal of Chemical Engineering

JF - Korean Journal of Chemical Engineering

SN - 0256-1115

IS - 1

ER -