Electrical characterizations of Neutron-irradiated SiC Schottky diodes

Geunwoo Ko; Hong Yeol Kim; Joona Bang; Ji Hyun Kim

doi:10.1007/s11814-009-0049-2

Electrical characterizations of Neutron-irradiated SiC Schottky diodes

Geunwoo Ko, Hong Yeol Kim, Joona Bang, Ji Hyun Kim

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article

10 Citations (Scopus)

Abstract

Neutrons with an average energy of 9.8±0.8 MeV were irradiated onto silicon carbide Schottky diodes. After bombardment at a fluency of 2.75×10¹¹ neutron/cm², the Schottky barrier height, ideality factor, and the leakage currents remained unchanged. The electrical properties began to deteriorate after bombardment at a fluency of 5.5×10¹¹ neutron/cm². In this study, we demonstrate that SiC SBD is robust under neutron irradiations and is well suited for space operations up to bombardments at a fluency of 2.75×10¹¹ neutron/cm².

Original language	English
Pages (from-to)	285-287
Number of pages	3
Journal	Korean Journal of Chemical Engineering
Volume	26
Issue number	1
DOIs	https://doi.org/10.1007/s11814-009-0049-2
Publication status	Published - 2009 Jan 1

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Keywords

Diode
Neutron irradiation
Silicon carbide

ASJC Scopus subject areas

Chemistry(all)
Chemical Engineering(all)

Cite this

Ko, G., Kim, H. Y., Bang, J., & Kim, J. H. (2009). Electrical characterizations of Neutron-irradiated SiC Schottky diodes. Korean Journal of Chemical Engineering, 26(1), 285-287. https://doi.org/10.1007/s11814-009-0049-2

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10.1007/s11814-009-0049-2