Abstract
Neutrons with an average energy of 9.8±0.8 MeV were irradiated onto silicon carbide Schottky diodes. After bombardment at a fluency of 2.75×1011 neutron/cm2, the Schottky barrier height, ideality factor, and the leakage currents remained unchanged. The electrical properties began to deteriorate after bombardment at a fluency of 5.5×1011 neutron/cm2. In this study, we demonstrate that SiC SBD is robust under neutron irradiations and is well suited for space operations up to bombardments at a fluency of 2.75×1011 neutron/cm2.
Original language | English |
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Pages (from-to) | 285-287 |
Number of pages | 3 |
Journal | Korean Journal of Chemical Engineering |
Volume | 26 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2009 Jan |
Keywords
- Diode
- Neutron irradiation
- Silicon carbide
ASJC Scopus subject areas
- Chemistry(all)
- Chemical Engineering(all)