Electrical contact properties of Cu2S nanowires grown vertically on Cu foil by gas-solid reaction

Youngseok Lim, Young Woo Ok, Sung Ju Tark, Yoon Mook Kang, Donghwan Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We grew Cu2S nanowires vertically on Cu foil by gas-solid reaction with a gas mixture of O2 and H2S. The electrical contact properties between the Cu2S nanowires and Cu foil were investigated using a modified current-voltage-temperature plot. The Cu/Cu2S layer exhibited the characteristics of a Schottky barrier with a barrier height of ∼0.72 eV, which was closer to the value for Cu/Cu2O than to Cu/Cu2S. Energy dispersive spectroscopy results showed the presence of Cu-oxide between the Cu2S nanowires and Cu foil. The overall structure was Cu/Cu-oxide/Cu2S and the electrical properties were controlled by the Cu/Cu-oxide.

Original languageEnglish
Pages (from-to)890-893
Number of pages4
JournalCurrent Applied Physics
Volume9
Issue number5
DOIs
Publication statusPublished - 2009 Sep 1

Fingerprint

Oxides
Metal foil
Nanowires
electric contacts
foils
nanowires
Gases
oxides
gases
Gas mixtures
gas mixtures
Energy dispersive spectroscopy
Electric properties
plots
electrical properties
Electric potential
electric potential
spectroscopy
Temperature
temperature

Keywords

  • CuS
  • Nanowire
  • Schottky

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Electrical contact properties of Cu2S nanowires grown vertically on Cu foil by gas-solid reaction. / Lim, Youngseok; Ok, Young Woo; Tark, Sung Ju; Kang, Yoon Mook; Kim, Donghwan.

In: Current Applied Physics, Vol. 9, No. 5, 01.09.2009, p. 890-893.

Research output: Contribution to journalArticle

Lim, Youngseok ; Ok, Young Woo ; Tark, Sung Ju ; Kang, Yoon Mook ; Kim, Donghwan. / Electrical contact properties of Cu2S nanowires grown vertically on Cu foil by gas-solid reaction. In: Current Applied Physics. 2009 ; Vol. 9, No. 5. pp. 890-893.
@article{09e74cd5ec4943b39e6d1f4f9d529930,
title = "Electrical contact properties of Cu2S nanowires grown vertically on Cu foil by gas-solid reaction",
abstract = "We grew Cu2S nanowires vertically on Cu foil by gas-solid reaction with a gas mixture of O2 and H2S. The electrical contact properties between the Cu2S nanowires and Cu foil were investigated using a modified current-voltage-temperature plot. The Cu/Cu2S layer exhibited the characteristics of a Schottky barrier with a barrier height of ∼0.72 eV, which was closer to the value for Cu/Cu2O than to Cu/Cu2S. Energy dispersive spectroscopy results showed the presence of Cu-oxide between the Cu2S nanowires and Cu foil. The overall structure was Cu/Cu-oxide/Cu2S and the electrical properties were controlled by the Cu/Cu-oxide.",
keywords = "CuS, Nanowire, Schottky",
author = "Youngseok Lim and Ok, {Young Woo} and Tark, {Sung Ju} and Kang, {Yoon Mook} and Donghwan Kim",
year = "2009",
month = "9",
day = "1",
doi = "10.1016/j.cap.2008.08.035",
language = "English",
volume = "9",
pages = "890--893",
journal = "Current Applied Physics",
issn = "1567-1739",
publisher = "Elsevier",
number = "5",

}

TY - JOUR

T1 - Electrical contact properties of Cu2S nanowires grown vertically on Cu foil by gas-solid reaction

AU - Lim, Youngseok

AU - Ok, Young Woo

AU - Tark, Sung Ju

AU - Kang, Yoon Mook

AU - Kim, Donghwan

PY - 2009/9/1

Y1 - 2009/9/1

N2 - We grew Cu2S nanowires vertically on Cu foil by gas-solid reaction with a gas mixture of O2 and H2S. The electrical contact properties between the Cu2S nanowires and Cu foil were investigated using a modified current-voltage-temperature plot. The Cu/Cu2S layer exhibited the characteristics of a Schottky barrier with a barrier height of ∼0.72 eV, which was closer to the value for Cu/Cu2O than to Cu/Cu2S. Energy dispersive spectroscopy results showed the presence of Cu-oxide between the Cu2S nanowires and Cu foil. The overall structure was Cu/Cu-oxide/Cu2S and the electrical properties were controlled by the Cu/Cu-oxide.

AB - We grew Cu2S nanowires vertically on Cu foil by gas-solid reaction with a gas mixture of O2 and H2S. The electrical contact properties between the Cu2S nanowires and Cu foil were investigated using a modified current-voltage-temperature plot. The Cu/Cu2S layer exhibited the characteristics of a Schottky barrier with a barrier height of ∼0.72 eV, which was closer to the value for Cu/Cu2O than to Cu/Cu2S. Energy dispersive spectroscopy results showed the presence of Cu-oxide between the Cu2S nanowires and Cu foil. The overall structure was Cu/Cu-oxide/Cu2S and the electrical properties were controlled by the Cu/Cu-oxide.

KW - CuS

KW - Nanowire

KW - Schottky

UR - http://www.scopus.com/inward/record.url?scp=67349159372&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67349159372&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2008.08.035

DO - 10.1016/j.cap.2008.08.035

M3 - Article

AN - SCOPUS:67349159372

VL - 9

SP - 890

EP - 893

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

IS - 5

ER -