Electrical contact properties of Cu2S nanowires grown vertically on Cu foil by gas-solid reaction

Youngseok Lim, Young Woo Ok, Sung Ju Tark, Yoonmook Kang, Donghwan Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We grew Cu2S nanowires vertically on Cu foil by gas-solid reaction with a gas mixture of O2 and H2S. The electrical contact properties between the Cu2S nanowires and Cu foil were investigated using a modified current-voltage-temperature plot. The Cu/Cu2S layer exhibited the characteristics of a Schottky barrier with a barrier height of ∼0.72 eV, which was closer to the value for Cu/Cu2O than to Cu/Cu2S. Energy dispersive spectroscopy results showed the presence of Cu-oxide between the Cu2S nanowires and Cu foil. The overall structure was Cu/Cu-oxide/Cu2S and the electrical properties were controlled by the Cu/Cu-oxide.

Original languageEnglish
Pages (from-to)890-893
Number of pages4
JournalCurrent Applied Physics
Volume9
Issue number5
DOIs
Publication statusPublished - 2009 Sep

Keywords

  • CuS
  • Nanowire
  • Schottky

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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